Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET
Title
: 
Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET

Series
: 
Siri kertas kerja penyelidikan (Universiti Teknologi Malaysia. Pusat Pengurusan Penyelidikan)

Publication Information
: 
Skudai : Universiti Teknologi Malaysia, 2007

Added Author
: 
Razali Ismail, 1960-,
 
Ismail Saad, 1974-,
 
Vijay Kumar Arora,

Added Conference Author
: 
Regional Conference on Solid State Science and Technology (23rd : 2007 : Johor Bahru)


LibraryItem BarcodeCall NumberMaterial TypeItem Category 1
Perpustakaan Raja Zarith Sofiah30000010142195xxNon Circulating UTM Special Collection MaterialsArticle