Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate
Title
: 
Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate

Personal Author
: 
Muhamad Syahir Tumaran, 1987-

Publication Information
: 
2010

Physical Description
: 
xvii, 61 p. : ill. ; 30 cm.

General Note
: 
Supervisor : Prof. Dr Razali Ismail

Subject Term
: 
Metal-oxide semiconductor field-effect transistors -- Design

Added Author
: 
Razali Ismail,

Added Corporate Author
: 
Fakulti Kejuruteraan Elektrik

Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010


LibraryItem BarcodeCall NumberMaterial TypeItem Category 1
FKE LibraryFKE30000004008XX(766054.1)Closed Access ThesisUTM Project Paper (Closed Access)
Perpustakaan Raja Zarith Sofiah30000010259734TK7871.95 M84 2010 rafClosed Access ThesisUTM Project Paper (Closed Access)