Title:
Principles and analysis of AIGaAS/GaAs heterojunction bipolar transistors
Personal Author:
Publication Information:
Boston, Mass. : Artech House, 1996
ISBN:
9780890065877
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000004687020 | TK7871.96.B55 L56 1996 | Open Access Book | Book | Searching... |
On Order
Summary
Summary
The first book devoted entirely to HBTs, this reference examines the basic concept, standard and advanced structures, noise performance, reliability issues, and simulation. It's main emphasis is on device physics and its mathematical representations, through which the operational characterization of AlGaAs/GaAs HBTs can be understood.
Table of Contents
| Introduction |
| Abrupt AlGaAs/GaAs HBT |
| Collector and Base Current in Abrupt HBT |
| Cutoff Frequency |
| Avalanche Multiplication Characteristics |
| Enhanced Structures, Base Grading, Setback Layer, and Graded Layer |
| Combined Effect of Setback and Graded Layers |
| Thermal Effect in AlGaAs/GaAs HBT |
| Self-Heating and Thermal Coupling Effects in Multiple-Emitter Finger HBT |
| Thermal-Avalanche Interacting Behavior |
| Base and Collector Leakage Currents |
| Leakage Currents at the Emitter-Base, Base-Collector, and Collector-Subcollector Peripheries, and the Subcollector-Substrate Interface |
| Base and Collector Currents Including Normal and Leakage Components |
| Leakage Current Characteristics in Post-Burn |
| Noise and High-Frequency Noise Characteristics |
| Overview of 1/F, Burst, and Shot Noise |
| Numerical Simulation |
| Overview of Two-Dimensional Device Simulator MEDICI |
| Effects of Graded Layer, Setback Layer, and Self-Heating |
| Effects of Different Base and Collector Structures |
