MMIC design : Ga As FETs and HEMTS

Title:

Personal Author:

Ladbrook, P. H.

Publication Information:

Boston, Mass : Artech House, 1989

ISBN:

9780890063149

Subject Term:

Microwave integrated circuits -- Design and construction

Transistor circuits -- Design and construction

Gallium arsenide semiconductors

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000001359508	TK7876 L32 1989	Open Access Book	Book	Searching... Unknown

Detailed information on the principles of integrated design required for successful fabrication of MMIC chips at a reasonable cost. It emphasizes CAD techniques and the effects of material variation. The device modelling techniques presented demonstrate the simulation of overall MMIC chip behavior a

Foreword	p. xi
Acknowledgments	p. xiii
Notes on nomenclature, acronyms and useful data	p. xv
List of symbols	p. xvii
Chapter 1 Introduction	p. 1
1.1 Statement of the problem	p. 1
1.2 Design approaches	p. 2
1.3 A simple example	p. 4
1.4 Yield	p. 7
1.5 The role of device physics	p. 8
Chapter 2 MMIC types and chip functions	p. 11
2.1 Scale of IC fabrication	p. 11
2.2 Applications	p. 12
2.2.1 Civil	p. 12
2.2.2 Military	p. 14
2.3 Chip functions	p. 15
2.4 Example MMICs	p. 17
Chapter 3 Overview of passive elements	p. 29
3.1 Introduction	p. 29
3.2 Microstripline	p. 30
3.3 Inductors	p. 34
3.4 Capacitors	p. 41
3.5 Resistors	p. 47
3.6 The Lange coupler	p. 49
3.7 Other components	p. 50
3.8 Final remarks	p. 52
Chapter 4 PIN and Schottky diodes	p. 55
4.1 Introduction	p. 55
4.2 Schottky diodes	p. 56
4.3 PIN diodes	p. 63
4.4 MMIC uses of PIN and Schottky diodes	p. 67
Chapter 5 Elementary FET principles	p. 69
5.1 Introduction	p. 69
5.2 Review of Si JFET operation	p. 70
5.3 Current saturation in the GaAs MESFET	p. 77
5.4 Mechanism of current saturation--summary	p. 82
5.5 Essential enhancements	p. 83
5.5.1 Si JFET	p. 83
5.5.2 GaAs MESFET	p. 84
5.6 Equivalent circuit of the GaAs MESFET	p. 85
5.7 Concluding remarks	p. 87
Chapter 6 MESFETs	p. 91
6.1 Introduction	p. 91
6.2 Brief outline of structure	p. 91
6.3 Equivalent circuit--physical basis	p. 95
6.3.1 Signal delay	p. 95
6.3.2 Charge storage	p. 99
6.3.3 Current modulation	p. 109
6.3.4 Transconductance delay	p. 110
6.4 Intrinsic equivalent circuit	p. 112
6.4.1 Configuration	p. 112
6.4.2 Voltage dependence of the space-charge layer extension, X	p. 116
6.4.3 Gate strip inductance, [script l][subscript g]	p. 121
6.4.4 Channel, or intrinsic, resistance, R[subscript i]	p. 121
6.4.5 Channel current, I[subscript CH]	p. 121
6.4.6 Intrinsic transconductance, g[subscript m0]	p. 122
6.4.7 Gate-channel capacitance, C[subscript gc]	p. 123
6.4.8 Gate-drain capacitance, C[subscript gd]	p. 123
6.4.9 Transconductance delay, [tau][subscript gm]	p. 124
6.5 Implications for FET design and usage	p. 124
6.6 Output conductance and other microwave effects of substrate current	p. 125
6.7 Effect of surface charge, non-uniform doping and gate recess depth	p. 135
6.8 Series parasitic resistances R[subscript s] and R[subscript d] and effect on equivalent circuit	p. 138
6.8.1 Source resistance, R[subscript s]	p. 139
6.8.2 Drain resistances, R[subscript D] and R[subscript d]	p. 142
6.9 Gate resistance	p. 145
6.10 Geometric capacitance	p. 146
6.11 Via-hole inductance	p. 155
6.12 GaAs FET noise	p. 156
6.13 Power MMICs	p. 163
Chapter 7 High electron mobility transistors	p. 189
7.1 Introduction	p. 189
7.2 Energy band line-up	p. 190
7.3 Physical basis and structure	p. 192
7.4 Practical HEMT structures	p. 196
7.5 Principal equivalent circuit elements	p. 198
7.6 HEMT noise	p. 201
7.7 Prospects for HEMT integration	p. 202
Chapter 8 Reverse modeling GaAs MESFETs and HEMTs	p. 205
8.1 Introduction	p. 205
8.2 Reverse modeling for gate length	p. 205
8.3 Errors in eqns (8.2) and (8.6)	p. 211
8.4 Extension to HEMTs	p. 211
8.5 General comments	p. 215
8.6 Reverse modeling for channel doping	p. 218
8.7 Conclusion	p. 219
Chapter 9 Design limits	p. 221
9.1 Introduction	p. 221
9.2 Limits to small-signal behavior	p. 222
9.2.1 Gain, frequency and voltage, and gate length	p. 222
9.2.2 Effect of gatewidth, Z[subscript G]	p. 225
9.2.3 Input and output reflection coefficient	p. 232
9.2.4 Maximum Tunable Gain (MTG), MAG, MSG and MUG	p. 242
9.3 Limits to large-signal (power) behavior	p. 248
Chapter 10 FETs in amplifiers	p. 259
10.1 Introduction	p. 259
10.2 Amplifier topologies and design principles	p. 261
10.2.1 Reactively matched amplifiers	p. 263
10.2.2 Design of a two-element matching or gain slope compensation network	p. 268
10.2.3 Lossy matched amplifiers	p. 277
10.2.4 Feedback amplifiers	p. 279
10.2.5 Distributed amplifiers	p. 287
10.2.6 The matrix amplifier	p. 300
10.2.7 Balanced amplifiers	p. 303
10.3 First trial device synthesis	p. 305
10.4 FET synthesis by reverse modeling	p. 310
10.5 FET synthesis for distributed power amplifiers	p. 312
10.5.1 Power-impedance considerations	p. 313
10.5.2 Frequency considerations	p. 315
10.5.3 FET synthesis--example	p. 316
10.6 Final remarks	p. 321
Chapter 11 Computer-aided design	p. 325
11.1 Introduction	p. 325
11.2 Sensitivity analysis--basis	p. 327
11.3 Application of the Monte Carlo method to yield forecasting	p. 337
11.4 Uses of yield forecasting	p. 343
11.5 FET centering	p. 344
11.6 Longer-term developments	p. 346
Chapter 12 Future developments	p. 357
Index	p. 365

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