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Summary
Summary
Due to the unprecedented growth in wireless applications, development of low-cost solutions for RF and microwave communication systems has become of great importance. This is a comprehensive treatment of lumped elements, which are playing a critical role in the development of the circuits that make these cost-effective systems possible. The work offers an in-depth understanding of the different types of RF and microwave circuit elements, including inductors, capacitors, resistors, transformers, via holes, airbridges and crossovers. Supported with over 220 equations and more than 200 illustrations, it covers the practical aspects of each element in detail. From materials, fabrication and analyses to design, modelling and physical, electrical and thermal applications, this resource offers coverage of the critical topics for work in the field.
Author Notes
Inder Bahl is a Distinguished Fellow of Technology at M/A-COM, Roanoke, Virginia. He earned his Ph.D. in microwave engineering from the Indian Institute of Technology
Table of Contents
Preface | p. xvii |
Acknowledgments | p. xix |
1 Introduction | p. 1 |
1.1 History of Lumped Elements | p. 1 |
1.2 Why Use Lumped Elements for RF and Microwave Circuits? | p. 2 |
1.3 L, C, R Circuit Elements | p. 4 |
1.4 Basic Design of Lumped Elements | p. 6 |
1.4.1 Capacitor | p. 7 |
1.4.2 Inductor | p. 8 |
1.4.3 Resistor | p. 8 |
1.5 Lumped-Element Modeling | p. 9 |
1.6 Fabrication | p. 11 |
1.7 Applications | p. 12 |
References | p. 13 |
2 Inductors | p. 17 |
2.1 Introduction | p. 17 |
2.2 Basic Definitions | p. 18 |
2.2.1 Inductance | p. 18 |
2.2.2 Magnetic Energy | p. 18 |
2.2.3 Mutual Inductance | p. 20 |
2.2.4 Effective Inductance | p. 20 |
2.2.5 Impedance | p. 21 |
2.2.6 Time Constant | p. 21 |
2.2.7 Quality Factor | p. 22 |
2.2.8 Self-Resonant Frequency | p. 23 |
2.2.9 Maximum Current Rating | p. 23 |
2.2.10 Maximum Power Rating | p. 23 |
2.2.11 Other Parameters | p. 23 |
2.3 Inductor Configurations | p. 24 |
2.4 Inductor Models | p. 25 |
2.4.1 Analytical Models | p. 25 |
2.4.2 Coupled-Line Approach | p. 28 |
2.4.3 Mutual Inductance Approach | p. 34 |
2.4.4 Numerical Approach | p. 36 |
2.4.5 Measurement-Based Model | p. 38 |
2.5 Coupling Between Inductors | p. 45 |
2.5.1 Low-Resistivity Substrates | p. 45 |
2.5.2 High-Resistivity Substrates | p. 46 |
2.6 Electrical Representations | p. 50 |
2.6.1 Series and Parallel Representations | p. 50 |
2.6.2 Network Representations | p. 51 |
References | p. 52 |
3 Printed Inductors | p. 57 |
3.1 Inductors on Si Substrate | p. 58 |
3.1.1 Conductor Loss | p. 60 |
3.1.2 Substrate Loss | p. 63 |
3.1.3 Layout Considerations | p. 64 |
3.1.4 Inductor Model | p. 65 |
3.1.5 Q-Enhancement Techniques | p. 69 |
3.1.6 Stacked-Coil Inductor | p. 80 |
3.1.7 Temperature Dependence | p. 84 |
3.2 Inductors on GaAs Substrate | p. 86 |
3.2.1 Inductor Models | p. 87 |
3.2.2 Figure of Merit | p. 88 |
3.2.3 Comprehensive Inductor Data | p. 88 |
3.2.4 Q-Enhancement Techniques | p. 104 |
3.2.5 Compact Inductors | p. 112 |
3.2.6 High Current Handling Capability Inductors | p. 116 |
3.3 Printed Circuit Board Inductors | p. 118 |
3.4 Hybrid Integrated Circuit Inductors | p. 121 |
3.4.1 Thin-Film Inductors | p. 121 |
3.4.2 Thick-Film Inductors | p. 124 |
3.4.3 LTCC Inductors | p. 126 |
3.5 Ferromagnetic Inductors | p. 127 |
References | p. 129 |
4 Wire Inductors | p. 137 |
4.1 Wire-Wound Inductors | p. 137 |
4.1.1 Analytical Expressions | p. 137 |
4.1.2 Compact High-Frequency Inductors | p. 144 |
4.2 Bond Wire Inductor | p. 146 |
4.2.1 Single and Multiple Wires | p. 147 |
4.2.2 Wire Near a Corner | p. 150 |
4.2.3 Wire on a Substrate Backed by a Ground Plane | p. 151 |
4.2.4 Wire Above a Substrate Backed by a Ground Plane | p. 153 |
4.2.5 Curved Wire Connecting Substrates | p. 154 |
4.2.6 Twisted Wire | p. 155 |
4.2.7 Maximum Current Handling of Wires | p. 155 |
4.3 Wire Models | p. 156 |
4.3.1 Numerical Methods for Bond Wires | p. 156 |
4.3.2 Measurement-Based Model for Air Core Inductors | p. 156 |
4.3.3 Measurement-Based Model for Bond Wires | p. 158 |
4.4 Magnetic Materials | p. 160 |
References | p. 161 |
5 Capacitors | p. 163 |
5.1 Introduction | p. 163 |
5.2 Capacitor Parameters | p. 165 |
5.2.1 Capacitor Value | p. 165 |
5.2.2 Effective Capacitance | p. 166 |
5.2.3 Tolerances | p. 166 |
5.2.4 Temperature Coefficient | p. 166 |
5.2.5 Quality Factor | p. 167 |
5.2.6 Equivalent Series Resistance | p. 167 |
5.2.7 Series and Parallel Resonances | p. 167 |
5.2.8 Dissipation Factor or Loss Tangent | p. 170 |
5.2.9 Time Constant | p. 170 |
5.2.10 Rated Voltage | p. 170 |
5.2.11 Rated Current | p. 170 |
5.3 Chip Capacitor Types | p. 171 |
5.3.1 Multilayer Dielectric Capacitor | p. 171 |
5.3.2 Multiplate Capacitor | p. 172 |
5.4 Discrete Parallel Plate Capacitor Analysis | p. 173 |
5.4.1 Vertically Mounted Series Capacitor | p. 173 |
5.4.2 Flat-Mounted Series Capacitor | p. 176 |
5.4.3 Flat-Mounted Shunt Capacitor | p. 177 |
5.4.4 Measurement-Based Model | p. 178 |
5.5 Voltage and Current Ratings | p. 181 |
5.5.1 Maximum Voltage Rating | p. 181 |
5.5.2 Maximum RF Current Rating | p. 181 |
5.5.3 Maximum Power Dissipation | p. 182 |
5.6 Capacitor Electrical Representation | p. 185 |
5.6.1 Series and Shunt Connections | p. 185 |
5.6.2 Network Representations | p. 187 |
References | p. 188 |
6 Monolithic Capacitors | p. 191 |
6.1 MIM Capacitor Models | p. 192 |
6.1.1 Simple Lumped Equivalent Circuit | p. 193 |
6.1.2 Coupled Microstrip-Based Distributed Model | p. 194 |
6.1.3 Single Microstrip-Based Distributed Model | p. 198 |
6.1.4 EC Model for MIM Capacitor on Si | p. 202 |
6.1.5 EM Simulations | p. 204 |
6.2 High-Density Capacitors | p. 206 |
6.2.1 Multilayer Capacitors | p. 208 |
6.2.2 Ultra-Thin-Film Capacitors | p. 211 |
6.2.3 High-K Capacitors | p. 212 |
6.2.4 Fractal Capacitors | p. 212 |
6.2.5 Ferroelectric Capacitors | p. 214 |
6.3 Capacitor Shapes | p. 216 |
6.3.1 Rectangular Capacitors | p. 217 |
6.3.2 Circular Capacitors | p. 218 |
6.3.3 Octagonal Capacitors | p. 218 |
6.4 Design Considerations | p. 220 |
6.4.1 Q-Enhancement Techniques | p. 220 |
6.4.2 Tunable Capacitor | p. 223 |
6.4.3 Maximum Power Handling | p. 223 |
References | p. 227 |
7 Interdigital Capacitors | p. 229 |
7.1 Interdigital Capacitor Models | p. 230 |
7.1.1 Approximate Analysis | p. 230 |
7.1.2 J-Inverter Network Equivalent Representation | p. 235 |
7.1.3 Full-Wave Analysis | p. 236 |
7.1.4 Measurement-Based Model | p. 238 |
7.2 Design Considerations | p. 239 |
7.2.1 Compact Size | p. 239 |
7.2.2 Multilayer Capacitor | p. 241 |
7.2.3 Q-Enhancement Techniques | p. 244 |
7.2.4 Voltage Tunable Capacitor | p. 247 |
7.2.5 High-Voltage Operation | p. 249 |
7.3 Interdigital Structure as a Photodetector | p. 249 |
References | p. 251 |
8 Resistors | p. 253 |
8.1 Introduction | p. 253 |
8.2 Basic Definitions | p. 255 |
8.2.1 Power Rating | p. 255 |
8.2.2 Temperature Coefficient | p. 256 |
8.2.3 Resistor Tolerances | p. 256 |
8.2.4 Maximum Working Voltage | p. 256 |
8.2.5 Maximum Frequency of Operation | p. 257 |
8.2.6 Stability | p. 257 |
8.2.7 Noise | p. 257 |
8.2.8 Maximum Current Rating | p. 257 |
8.3 Resistor Types | p. 257 |
8.3.1 Chip Resistors | p. 258 |
8.3.2 MCM Resistors | p. 258 |
8.3.3 Monolithic Resistors | p. 258 |
8.4 High-Power Resistors | p. 265 |
8.5 Resistor Models | p. 267 |
8.5.1 EC Model | p. 268 |
8.5.2 Distributed Model | p. 269 |
8.5.3 Meander Line Resistor | p. 270 |
8.6 Resistor Representations | p. 272 |
8.6.1 Network Representations | p. 272 |
8.6.2 Electrical Representations | p. 272 |
8.7 Effective Conductivity | p. 274 |
8.8 Thermistors | p. 276 |
References | p. 276 |
9 Via Holes | p. 279 |
9.1 Types of Via Holes | p. 279 |
9.1.1 Via Hole Connection | p. 279 |
9.1.2 Via Hole Ground | p. 281 |
9.2 Via Hole Models | p. 282 |
9.2.1 Analytical Expression | p. 283 |
9.2.2 Quasistatic Method | p. 284 |
9.2.3 Parallel Plate Waveguide Model | p. 286 |
9.2.4 Method of Moments | p. 287 |
9.2.5 Measurement-Based Model | p. 289 |
9.3 Via Fence | p. 290 |
9.3.1 Coupling Between Via Holes | p. 293 |
9.3.2 Radiation from Via Ground Plug | p. 293 |
9.4 Plated Heat Sink Via | p. 294 |
9.5 Via Hole Layout | p. 294 |
References | p. 296 |
10 Airbridges and Dielectric Crossovers | p. 299 |
10.1 Airbridge and Crossover | p. 299 |
10.2 Analysis Techniques | p. 301 |
10.2.1 Quasistatic Method | p. 301 |
10.2.2 Full-Wave Analysis | p. 306 |
10.3 Models | p. 308 |
10.3.1 Analytical Model | p. 308 |
10.3.2 Measurement-Based Model | p. 310 |
References | p. 315 |
11 Transformers and Baluns | p. 317 |
11.1 Basic Theory | p. 318 |
11.1.1 Parameters Definition | p. 318 |
11.1.2 Analysis of Transformers | p. 319 |
11.1.3 Ideal Transformers | p. 322 |
11.1.4 Equivalent Circuit Representation | p. 323 |
11.1.5 Equivalent Circuit of a Practical Transformer | p. 325 |
11.1.6 Wideband Impedance Matching Transformers | p. 326 |
11.1.7 Types of Transformers | p. 329 |
11.2 Wire-Wrapped Transformers | p. 329 |
11.2.1 Tapped Coil Transformers | p. 329 |
11.2.2 Bond Wire Transformer | p. 332 |
11.3 Transmission-Line Transformers | p. 332 |
11.4 Ferrite Transformers | p. 336 |
11.5 Parallel Conductor Winding Transformers on Si Substrate | p. 339 |
11.6 Spiral Transformers on GaAs Substrate | p. 341 |
11.6.1 Triformer Balun | p. 344 |
11.6.2 Planar-Transformer Balun | p. 345 |
References | p. 349 |
12 Lumped-Element Circuits | p. 353 |
12.1 Passive Circuits | p. 353 |
12.1.1 Filters | p. 353 |
12.1.2 Hybrids and Couplers | p. 356 |
12.1.3 Power Dividers/Combiners | p. 370 |
12.1.4 Matching Networks | p. 372 |
12.1.5 Lumped-Element Biasing Circuit | p. 377 |
12.2 Control Circuits | p. 380 |
12.2.1 Switches | p. 381 |
12.2.2 Phase Shifters | p. 387 |
12.2.3 Digital Attenuator | p. 390 |
References | p. 392 |
13 Fabrication Technologies | p. 395 |
13.1 Introduction | p. 395 |
13.1.1 Materials | p. 396 |
13.1.2 Mask Layouts | p. 401 |
13.1.3 Mask Fabrication | p. 401 |
13.2 Printed Circuit Boards | p. 402 |
13.2.1 PCB Fabrication | p. 404 |
13.2.2 PCB Inductors | p. 405 |
13.3 Microwave Printed Circuits | p. 405 |
13.3.1 MPC Fabrication | p. 407 |
13.3.2 MPC Applications | p. 408 |
13.4 Hybrid Integrated Circuits | p. 410 |
13.4.1 Thin-Film MICs | p. 410 |
13.4.2 Thick-Film Technology | p. 412 |
13.4.3 Cofired Ceramic and Glass-Ceramic Technology | p. 414 |
13.5 GaAs MICs | p. 416 |
13.5.1 MMIC Fabrication | p. 418 |
13.5.2 MMIC Example | p. 421 |
13.6 CMOS Fabrication | p. 421 |
13.7 Micromachining Fabrication | p. 424 |
References | p. 425 |
14 Microstrip Overview | p. 429 |
14.1 Design Equations | p. 429 |
14.1.1 Characteristic Impedance and Effective Dielectric Constant | p. 429 |
14.1.2 Effect of Strip Thickness | p. 431 |
14.2 Design Considerations | p. 432 |
14.2.1 Effect of Dispersion | p. 433 |
14.2.2 Microstrip Losses | p. 433 |
14.2.3 Quality Factor Q | p. 435 |
14.2.4 Enclosure Effect | p. 438 |
14.2.5 Frequency Range of Operation | p. 443 |
14.2.6 Power-Handling Capability | p. 444 |
14.3 Coupled Microstrip Lines | p. 456 |
14.3.1 Even-Mode Capacitance | p. 457 |
14.3.2 Odd-Mode Capacitance | p. 458 |
14.3.3 Characteristic Impedances | p. 459 |
14.3.4 Effective Dielectric Constants | p. 459 |
14.4 Microstrip Discontinuities | p. 460 |
14.5 Compensated Microstrip Discontinuities | p. 461 |
14.5.1 Step-in-Width | p. 461 |
14.5.2 Chamfered Bend | p. 462 |
14.5.3 T-Junction | p. 463 |
References | p. 465 |
Appendix | p. 469 |
About the Author | p. 471 |
Index | p. 473 |