Microwave de-embedding : from theory to applications

Title:

Publication Information:

Amsterdam ; Boston : Elsevier/AP, Academic Press is an imprint of Elsevier, [2014]

Physical Description:

xxiv, 456 pages : illustrations ; 25 cm.

ISBN:

9780124017009

Subject Term:

Microwaves

Added Author:

Crupi, Giovanni,

Schreurs, Dominique,

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010337261	TK7876 M5257 2014	Open Access Book	Book	Searching... Unknown

This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies.

With this book you will learn:

The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor's linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding

Author Notes

Giovanni Crupi is an assistant professor at the University of Messina, Italy, where he teaches microwave electronics and optoelectronics. Since 2005, he has been a visiting scientist with KU Leuven and IMEC, Leuven, Belgium. Giovanni's main research interests include small and large signal modeling of advanced microwave devices. He is the chair of the IEEE Microwave Theory and Techniques Society (MTT-S) Fellowship program and serves as an associate editor of International Journal of Numerical Modeling: Electronic Networks, Devices and Fields.
Dominique M.M.-P. Schreurs is a full professor at KU Leuven, Leuven, Belgium. Previously, she has been a visiting scientist at Agilent Technologies (USA), Eidgenssische Technische Hochschule Zrich (Switzerland), and the National Institute of Standards and Technology (USA). Dominique's main research interests concern linear and nonlinear characterization and modeling of microwave devices and circuits, as well as linear and nonlinear hybrid and integrated circuit design for telecommunications and biomedical applications. She is the technical chair of ARFTG and serves as the editor of the IEEE Transactions on Microwave Theory and Techniques.

Giovanni GhioneStephen MaasGiovanni Crupi and Dominique M.M.-P. Schreurs and Alina CaddemiGilles DambrineErnesto Limiti and Walter Ciccognani and Sergio ColangeliJames C. RautioIltcho Angelov and Gustavo Avolio and Dominique M.M.-P. SchreursWendy Van Moer and Lieve Lauwers and Kurt BarbéJosé C. Pedro and Telmo R. CunhaManuel Yarlequé and Dominique M.M.-P. Schreurs and Bart Nauwelaers and Davide Resca and Giorgio VanniniAntonio Raffo and Valeria Vadalà and Giorgio Vannini

Foreword	p. xi
Foreword	p. xiii
About the Editors	p. xv
Authors' Biographies	p. xvii
Authors	p. xxiii
Chapter 1 A Clear-Cut Introduction to the De-embedding Concept: Less is More	p. 1
1.1 Introduction	p. 1
1.2 Microwave measurements	p. 2
1.2.1 Linear measurements: from scattering to noise parameters	p. 5
1.2.2 Nonlinear measurements	p. 9
1.3 Microwave modeling	p. 10
1.3.1 Small-signal equivalent circuit	p. 12
1.3.2 Large-signal equivalent circuit	p. 22
1.4 From de-embedding to waveform engineering	p. 25
1.4.1 De-embedding: from scattering to noise parameters	p. 26
1.4.2 De-embedding: nonlinear time-domain waveforms	p. 28
1.5 De-embedding: experimental results	p. 30
1.5.1 Basics of FinFET	p. 30
1.5.2 From scattering to noise parameters	p. 32
1.5.3 Nonlinear time-domain waveforms	p. 36
References	p. 39
Chapter 2 Millimeter-Wave Characterization of Silicon Devices under Small-Signal Regime: Instruments and Measurement Methodologies	p. 47
2.1 Preliminary concepts	p. 47
2.1.1 Advanced silicon technologies and mm-wave applications	p. 47
2.1.2 S-parameter measurements: basics	p. 48
2.1.3 High-frequency noise measurements: basics	p. 55
2.2 On-wafer mm-wave instruments and setup	p. 61
2.2.1 On-wafer station and setup	p. 62
2.2.2 Millimeter-wave vectorial network analyzer: principle and architecture	p. 63
2.2.3 Millimeter-wave noise receivers: principle and architecture	p. 64
2.3 Calibration and de-embedding procedures for on-wafer measurements	p. 66
2.3.1 Off-wafer calibration procedures: principle and calibration kit	p. 69
2.3.2 On-wafer de-embedding procedures: principle and de-embedding test structures	p. 74
2.4 Applications: advanced silicon MOSFETs and HBTs	p. 83
2.4.1 Small-signal modeling and validation in mm-wave frequency range	p. 83
2.4.2 Noise parameter extraction techniques and validation in the mm-wave frequency range	p. 84
References	p. 92
Chapter 3 Characterization and Modeling of High-Frequency Active Devices Oriented to High-Sensitivity Subsystems Design	p. 97
3.1 Introduction	p. 97
3.2 High-frequency noise measurement benches	p. 99
3.2.1 Typical instrumentation	p. 99
3.2.2 Measuring noise power	p. 102
3.2.3 Typical test bench architectures	p. 104
3.3 From noise power to noise parameters computation and modeling	p. 106
3.3.1 Noise factor computation	p. 106
3.3.2 Full noise characterization and modeling	p. 112
3.4 Measurement errors	p. 126
3.4.1 Noise factor uncertainty	p. 126
3.4.2 Effects of receiver compression	p. 129
3.4.3 Considerations on receiver bandwidth	p. 130
3.5 High-sensitivity subsystems design	p. 133
3.5.1 Traditional approaches	p. 133
3.5.2 A systematic approach utilizing constant-mismatch circles, degenerative feedback	p. 134
3.5.3 Noise measure-based design for multistage amplifiers	p. 140
3.5.4 Postproduction design	p. 143
References	p. 146
Chapter 4 High-Frequency and Microwave Electromagnetic Analysis Calibration and De-embedding	p. 151
4.1 Introduction	p. 151
4.2 Double-delay calibration	p. 152
4.2.1 Overview of double-delay	p. 152
4.2.2 Theory of double-delay	p. 153
4.2.3 Failure mechanisms of double-delay	p. 158
4.2.4 Exact evaluation of EM analysis and calibration error	p. 161
4.3 Multiple coupled port calibration and de-embedding	p. 164
4.4 Short-open calibration	p. 167
4.4.1 SOC theory	p. 169
4.4.2 Relationship between SOC and double-delay	p. 171
4.5 Local ground and internal port de-embedding	p. 173
4.5.1 Theory of local ground and internal port de-embedding	p. 175
4.5.2 Failure mechanisms of local ground and internal port de-embedding	p. 181
4.6 Circuit subdivision and port tuning: application of calibrated ports	p. 182
References	p. 187
Chapter 5 Large-Signal Time-Domain Waveform-Based Transistor Modeling	p. 189
5.1 Introduction	p. 189
5.2 Large-signal transistor modeling: overview	p. 190
5.3 Modeling currents (I-V) and charges (Q-V): procedure	p. 193
5.3.1 Model equations	p. 193
5.3.2 Extraction of basic parameters	p. 197
5.3.3 Modeling functions	p. 204
5.3.4 Capacitances model and implementation in simulators	p. 206
5.4 Time-domain waveform-based models extraction	p. 214
5.4.1 Modeling of currents and charges from high-frequency time-domain waveforms	p. 214
5.4.2 Low-frequency waveforms-based modeling of currents	p. 214
5.4.3 Combining low- and high-frequency time-domain waveforms	p. 216
References	p. 220
Chapter 6 Measuring and Characterizing Nonlinear Radio-Frequency Systems	p. 225
6.1 Introduction	p. 225
6.2 Measuring the nonlinear behavior of an RF system	p. 226
6.2.1 Sampling and calibration issues	p. 226
6.2.2 Sampler-based measurement instruments	p. 227
6.2.3 Mixer-based measurement instruments	p. 228
6.2.4 Calibration procedure for nonlinear measurement instruments	p. 230
6.2.5 On-wafer calibration	p. 231
6.2.6 Advantages and disadvantages	p. 232
6.3 Best linear approximation and nonlinear in-band distortions	p. 233
6.3.1 Approximate modeling	p. 233
6.3.2 Best linear approximation: the concept	p. 233
6.3.3 Excitation signals	p. 235
6.3.4 Estimating the best linear approximation	p. 236
6.3.5 Measurement example	p. 237
6.4 Out-of-band best linear approximation	p. 238
6.4.1 Out-of-band best linear approximation: the concept	p. 238
6.4.2 Determining the out-of-band best linear approximation	p. 239
6.4.3 Measurement example	p. 240
6.5 Compensating nonlinear out-of-band distortions	p. 245
6.5.1 Adjacent co-channel power ratio	p. 245
6.5.2 Compensating source-pull	p. 246
References	p. 253
Chapter 7 Behavioral Models for Microwave Circuit Design	p. 255
7.1 Introduction	p. 255
7.2 Behavioral modeling tools	p. 256
7.2.1 Physics-based and behavior-based models	p. 256
7.2.2 Behavioral modeling technology	p. 267
7.2.3 Behavioral models for RF and microwave devices	p. 279
7.2.4 De-embedding measurement data	p. 286
7.3 Embedding and de-embedding behavioral models	p. 294
7.3.1 Behavioral modeling embedding and de-embedding	p. 295
7.3.2 Considerations on model inversion	p. 298
7.3.3 Examples of behavioral modeling embedding and de-embedding	p. 301
References	p. 312
Chapter 8 Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design	p. 317
8.1 Introduction	p. 317
8.2 Electromagnetic analysis of MMIC transistor layout	p. 317
8.2.1 Dielectric stack and metal layers definition	p. 319
8.2.2 Mesh cell dimensioning and functional partitioning	p. 320
8.2.3 Port definitions	p. 321
8.2.4 Setup for complex layout model	p. 322
8.2.5 Full-wave EM simulation of a transistor passive structure	p. 323
8.2.6 Frequency range of analysis	p. 324
8.2.7 EM simulator output	p. 324
8.3 Transistor modeling based on a distributed parasitic network description	p. 325
8.3.1 Distributed modeling approaches	p. 325
8.3.2 Model definition and identification	p. 326
8.3.3 Model scalability and frequency extrapolation capabilities	p. 329
8.3.4 Experimental and simulation results	p. 331
8.3.5 Complexity issues and nonlinear modeling	p. 333
8.4 Full-wave EM analysis for transistor equivalent circuit parasitic element extraction	p. 338
8.4.1 Model definition and identification	p. 339
8.4.2 Model scalability and frequency extrapolation capabilities	p. 344
8.4.3 Experimental and simulation results	p. 344
8.5 Examples of application to MMIC design	p. 346
8.5.1 A more flexible use of transistor layout	p. 346
8.5.2 MMIC design based on distributed transistor models	p. 348
8.6 De-embedding for bare-die transistor	p. 353
8.6.1 Case study: bare-die transistor in test fixture	p. 354
8.6.2 Equivalent circuit model for extrinsic networks	p. 355
8.6.3 Four-port representation of extrinsic network	p. 362
8.6.4 De-embedding of transistor S parameters	p. 368
8.7 Bare-die transistor modeling and power amplifier design	p. 370
8.7.1 Transistor modeling	p. 371
8.7.2 Class-AB and class-E power amplifier design	p. 373
References	p. 379
Chapter 9 Nonlinear Embedding and De-embedding: Theory and Applications	p. 385
9.1 Introduction	p. 385
9.2 Waveform engineering at the current-generator plane	p. 386
9.2.1 Modeling hints	p. 386
9.2.2 Measurement hints	p. 391
9.3 Nonlinear embedding design technique	p. 396
9.3.1 Theoretical formulation	p. 396
9.3.2 Design examples	p. 400
9.4 Nonlinear de-embedding design technique	p. 415
9.4.1 Theoretical formulation	p. 428
9.4.2 Experimental examples	p. 429
9.5 Nonlinear embedding versus de-embedding: a comparative analysis	p. 435
References	p. 439
Index	p. 445

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