Introduction to nitride semiconductor blue lasers and light emitting diodes

Title:

Publication Information:

London : Taylor & Francis, 2000

ISBN:

9780748408368

Subject Term:

Semiconductor lasers

Gallium nitride

Diodes, Semiconductor

Added Author:

Nakamura, Shuji, 1954-

Chichibu, Shigesfusa F., 1963-

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Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000004922138	TA1700 I57 2000	Open Access Book	Book	Searching... Unknown

The "blue laser" is an exciting new device used in physics. The potential is now being recognized for its development into a commercial lighting system using about a tenth of the power and with a thousand times the operating lifetime of a comparable conventional system. This comprehensive work introduces the subject at a level suitable for graduate students. It covers the basics physics of light emitting diodes (LEDs) and laser diodes (LDs) based on gallium nitride and related nitride semiconductors, and gives an outline of their structural, transport and optical properties, and the relevant device physics. It begins with the fundamentals, and covers both theory and experiment, as well as an examination of actual and potential device applications. Shuji Nakamura and Nichia Chemicals Industries made the initial breakthroughs in the field, and these have revealed that LEDs and LDs are a sophisticated physical phenomenon and a commercial reality.

Steven P. DenBaarsTakeshi Uenoyama and Masakatsu SuzukiChris G. Van de WalleFernando A. PonceShigefusa F. Chichibu and Yoichi Kawakami and Takayuki SotaMarek Osinski and Daniel L. BartonShuji Nakamura

1. Basics Physics and Materials Technology of GaN LEDs and LDs	p. 1
1.1 Introduction	p. 1
1.1.1 Historical Evolution of LED Technology	p. 1
1.2 Basic Physics of LEDs: Injection Luminescence	p. 3
1.2.1 Direct and Indirect Band-Gap Material	p. 4
1.2.2 Radiative Recombination	p. 5
1.2.3 External Quantum Efficiency	p. 7
1.2.4 Luminous Efficiency	p. 8
1.2.5 Injection Efficiency	p. 9
1.2.6 Heterojunction vs. Homojunction LED Materials	p. 10
1.2.7 Quantum Well LEDs	p. 12
1.3 LED Materials Selection	p. 12
1.3.1 Energy Band Structure/Lattice Constants	p. 12
1.3.2 GaN Physical Properties	p. 13
1.3.3 GaN Based LED Structures	p. 13
1.4 Crystal Growth	p. 15
1.4.1 MOCVD Growth	p. 15
1.4.2 MOCVD Systems for Production	p. 17
1.4.3 Molecular Beam Epitaxy (MBE)	p. 18
1.4.4 Chloride Vapor Phase Epitaxy	p. 19
1.5 Group-III Nitride Materials Growth Issues	p. 20
1.5.1 Substrates	p. 20
1.5.2 Nucleation Layer Technology	p. 21
1.5.3 Growth and Doping of GaN	p. 21
1.5.4 Growth of AlGaN and AlGaN/GaN Heterostructures	p. 22
1.5.5 Growth of InGaN and InGaN/GaN Heterostructures	p. 23
1.6 Conclusions	p. 24
1.7 References	p. 25
2. Theoretical Analysis of Optical Gain Spectra	p. 29
2.1 Introduction	p. 29
2.2 Optical Gains Spectra by Many-Body Approach	p. 30
2.2.1 Linear Response Theory	p. 30
2.2.2 Screening Effects	p. 32
2.2.3 Self-Energies of Electron Gas	p. 34
2.2.4 Coulomb Enhancement	p. 36
2.3 Electronic Band Structures	p. 39
2.3.1 Electronic Band Structures of Bulk GaN and AlN	p. 39
2.3.2 Strain Effect on Electronic Band Structures	p. 42
2.3.3 k.p Theory for Wurtzite	p. 43
2.3.4 Physical Parameters	p. 44
2.3.5 Subband Structures of GaN/AlGaN Quantum Wells	p. 47
2.3.6 Subband in Wurtzite Quantum Wells	p. 47
2.4 Optical Gain Spectra of III-V Nitrides LD Structures	p. 49
2.4.1 Free Carrier Model	p. 49
2.4.2 Coulomb Enhancement (Excitonic Effects) in the Optical Gain	p. 56
2.4.3 Optical Gain with Localized States	p. 58
2.5 Conclusions	p. 63
2.6 References	p. 64
3. Electrical Conductivity Control	p. 67
3.1 Doping	p. 67
3.1.1 Theory of Native Defects and Impurities	p. 68
3.1.2 n-type Doping	p. 75
3.1.3 p-type Doping	p. 81
3.2 Band Offsets	p. 90
3.2.1 Theory of Band Offsets at Nitride Interfaces	p. 91
3.2.2 Experimental Results for Band Offsets	p. 95
3.2.3 Discussion	p. 96
3.3 Acknowledgments	p. 97
3.4 References	p. 97
4. Crystal Defects and Device Performance in LEDs and LDs	p. 105
4.1 CrystalGrowth and Microstructure	p. 105
4.1.1 Lattice Structure of the Nitride Semiconductors	p. 106
4.1.2 Thin Film Epitaxy and Substrates	p. 107
4.2 Epitaxy on SiC Substrates	p. 109
4.3 Epitaxy on Sapphire Substrates	p. 111
4.3.1 AlN as a Buffer Layer	p. 113
4.3.2 GaN as a Buffer Layer	p. 114
4.4 Homoepitaxial Growth of GaN	p. 115
4.5 Defect Microstructurein LEDs and LDs	p. 116
4.5.1 Large Defect Densities in High Performance Materials	p. 117
4.5.2 Columnar Structure of GaN on Sapphire	p. 119
4.5.3 Tilt Boundaries	p. 121
4.5.4 Twist Boundaries	p. 122
4.6 Polarity and Electronic Properties	p. 123
4.7 The Nature of the Dislocation	p. 126
4.7.1 Determination of the Burgers Vector	p. 126
4.7.2 Nanopipes and Inversion Domains	p. 129
4.8 Spatial Variation of Luminescence	p. 132
4.8.1 Undoped Material	p. 132
4.8.2 Doped Materials	p. 135
4.9 Microscopic Properties of In[subscript x]Ga[subscript 1-x]N Quantum Wells	p. 136
4.9.1 The Nature of the InGaN/GaN Interface	p. 137
4.9.2 Microstructure of Quantum Wells	p. 139
4.9.3 Spatial Variation of the luminescence of In[subscript x]Ga[subscript 1-x]N Quantum Wells	p. 144
4.10 Microstructure and Device Performance	p. 149
4.10.1 Stress and Point Defect Structure	p. 149
4.10.2 Minimization of Strain by Maximizing Film Smoothness	p. 149
4.10.3 The Role of Dislocations in Strain Relaxation	p. 150
4.10.4 The Role of Nanopipes and Extension to ELOG Structures	p. 150
4.11 References	p. 150
5. Emission Mechanisms and Excitons in GaN and InGaN Bulk and QWs	p. 153
5.1 Introduction	p. 153
5.2 GaN Bulk Crystals	p. 154
5.2.1 Free and Bound Excitons	p. 154
5.2.2 Biexcitons in GaN	p. 165
5.2.3 Strain Effects	p. 175
5.2.4 Phonons in Nitrides	p. 176
5.3 InGaN Bulk and QWs for Practical Devices	p. 184
5.3.1 Quantized Energy Levels	p. 186
5.3.2 Piezoelectric Field	p. 192
5.3.3 Spontaneous Emission of Localized Excitons	p. 197
5.3.4 Localized Exciton Dynamics	p. 219
5.3.5 Optical Gain in Nitrides	p. 248
5.4 References	p. 258
6. Life Testing and Degradation Mechanisms in InGaN LEDs	p. 271
6.1 Introduction	p. 271
6.2 Life Testing of InGaN/AlGaN/GaN LEDs	p. 272
6.2.1 Life Testing Primer	p. 272
6.2.2 Potential Degradation Regions in LEDs	p. 273
6.2.3 Life Test System Considerations	p. 274
6.2.4 Results of Life Tests on Nichia Blue InGaN/AlGaN/GaN Double Heterostructure LEDs	p. 276
6.3 Analysis of Early Test Failures	p. 281
6.3.1 Analysis of LED #19	p. 281
6.3.2 Analysis of LEDs #16 and 17	p. 282
6.4 Effects of UV Emission on Plastic Transparency	p. 286
6.5 Thermal Degradation of Plastic Package Transparency	p. 289
6.6 Degradation of GaN-Based LEDs Under High Current Stress	p. 295
6.7 Double Heterostructure Device Testing	p. 295
6.8 EBIC Analysis	p. 301
6.9 Pulsed Current Stress Experiments and Results on Quantum Well LEDs	p. 307
6.10 Failure Analysis of Degraded Quantum Well LEDs	p. 309
6.11 Discussion	p. 312
6.12 Summary	p. 313
6.13 References	p. 314
7. Development and Future Prospects of GaN-based LEDs and LD	p. 317
7.1 Properties of InGaN-based LEDs	p. 317
7.1.1 Introduction	p. 317
7.1.2 Amber LEDs	p. 317
7.1.3 UV/Blue/Green LEDs	p. 321
7.1.4 Roles of Dislocations in InGaN-Based LEDs	p. 328
7.2 LDs Grown on Sapphire Substrate	p. 333
7.2.1 Introduction	p. 333
7.2.2 LDs Grown on Sapphire Substrates	p. 333
7.2.3 ELOG Substrate	p. 336
7.2.4 InGaN-Based LDs Grown on ELOG Substrates	p. 338
7.3 LDs Grown on GaN Substrate	p. 343
7.3.1 Free-Standing GaN Substrates	p. 344
7.3.2 Characteristics of LDs	p. 344
7.4 Future Prospects of InGaN-based Emitting Devices	p. 348
7.5 References	p. 348
Appendix
Parameters Table	p. 351
Subject Index	p. 369

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