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Cover image for Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET
Title:
Investigation on the effects of oblique rotating ion implantation (ORI) for nanoscale vertical double gate NMOSFET
Series:
Siri kertas kerja penyelidikan (Universiti Teknologi Malaysia. Pusat Pengurusan Penyelidikan)
Publication Information:
Skudai : Universiti Teknologi Malaysia, 2007

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30000010142195 xx Non Circulating UTM Special Collection Materials Article
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