Compound semiconductor materials and devices : symposium held April 1-6, 2013, Boston, Masssachusetts

Compound semiconductors impact our lives in countless ways, with applications in photovoltaics, wireless and optical telecommunication, high-power electronics, and "green" energy. Recent areas of progress include sensing devices in biological and chemical environments, high-efficiency power devices, and photon-counting detectors. Although these materials offer significant advantages, including bandgap tailorability, high efficiency, high-temperature operation, and radiation tolerance, much work needs to be done to realize their full potential. This symposium proceedings volume represents recent advances in compound semiconductors for electronics, detection, and processing. It brought together researchers and engineers working on both fundamental materials research and device-related materials engineering, in order to address current problems and identify next-generation applications. This selection of papers demonstrates the cross-fertilization of ideas that will drive the successful adoption of these materials for new applications.ls for new applications.ls for new applications.ls for new applications.

Part I III-Nitride Materials and Devices

1 Reduction in gate leakage current of AlGaN/GaN HEMT by rapid thermal oxidationT. Sreenidhi and A. Azizur Rahman and Arnab Bhattacharya and Amitava DasGupta and Nandita DasGupta

2 High resistivity isolation for AlGaN/GaN HEMT using Al double-implantationAndrzej Taube and Maciej Kozubal and Jakub Kaczmarski and Marcin Juchniewicz and Adam Barcz and Jan Dyczewski and Rafal Jakiela and Elzbieta Dynowska and Michal Adam Borysiewicz and Pawel Prystawko|cJakub Jasinski and Pawel Borowicz and Eliana Kaminska and Anna Piotrowska

3 InGaN structure influence on efficiency droopOleg Rabinovich

4 Atomic-layer deposition for improved performance of III-N avalanche photodiodesJohn Hennessy and L. Douglas Bell and Shouleh Nikzad and Puneet Suvarna and Jeffrey M. Leathersich and Jonathan Marini and F. (Shadi) Shahedipour-Sandvik

5 Electrical characterization of thick InGaN films for photovoltaic applicationsYoshitaka Nakano and Liwen Sang and Masatomo Sumiya

6 Growth of hBN using metallic boron: isotopically enriched h10BN and h11BNT. B. Hoffman and Y. Zhang and J. H. Edgar and D. K. Gaskill

Part II III-V and II-VI Materials and Devices

7 Carrier dynamics in self-assembled InAs QD laser structures and broad-area InAs QD lasers grown by molecular beam epitaxyYongkun Sin and Stephen LaLumondiere and William Lotshaw and Steven C. Moss

8 Dielectric response of light emitting semiconductor junction diodes: frequency and temperature domain studyKanika Bansal and Shouvik Datta

9 Carrier dynamics in MOVPE-grown bulk InGaAsNSb materials and epitaxial lift-off GaAs double heterostructures for multi-junction solar cellsYongkun Sin and Stephen LaLumondiere and Nathan Wells and Zachary Lingley and Nathan Presser and William Lotshaw and Steven C. Moss and Tae Wan Kim and Kamran Forghani and Luke J. Mawst and Thomas F. Kuech and Rao Tatavarti and Andree Wibowo and Noren Pan

10 OMVPE of InAlAs using alternative Al and As precursorsBrittany L. Smith and Nichole M. Hoven and Glen Hillier and Seth M. Hubbard and David V. Forbes

11 Microwave reflection study of ultra-high mobility GaAs/AlGaAs 2D-electron system at large filling factorsTianyu Ye and Ramesh Mani and Werner Wegscheider

12 Leakage currents of large area InP/InGaAs heterostructuresAnders Olsson and Abuduwayiti Aierken and Jani Oksanen and Harri Lipsanen and Jukka Tulkki

13 Improved electrical properties of Ga2O3:Sn/CIGS hetero-junction photoconductorKenji Kikuchi and Shigeyuki Imura and Kazunori Miyakawa and Hiroshi Ohtake and Misao Kubota and Eiji Ohta

14 Some aspects of AIIIBV and AIIBVI growthOleg Rabinovich

Part III Nanostructures, Defects and Other Materials

15 Production and biofunctionalization of elongated semiconducting nanocrystals for ex-vivo applicationsTobias Jochum and Daniel Ness and Marieke Dieckmann and Katja Werner and Jan Niehaus and Horst Weller

16 Optical fabrication of semiconductor single-crystalline microspheres in superfluid heliumShinya Okamoto and Satoshi Ichikawa and Yosuke Minowa and Masaaki Ashida

17 Carbon-related deep-level defects and turn-on recovery characteristics in AlGaN/GaN hetero-structuresYoshitaka Nakano and Yoshihiro Irokawa and Masatomo Sumiya and Yasunobu Sumida and Shuichi Yagi and Hiroji Kawai

18 GaSb on Si: structural defects and their effect on surface morphology and electrical propertiesShailesh Kumar Madisetti and Vadim Tokranov and Andrew Greene and Steven Novak and Michael Yakimov and Serge Oktyabrsky and Steven Bentley and Ajey P. Jacob

19 Cause of forward voltage degradation for 4H-SiC PiN diode with additional processTetsuro Hemmi and Koji Nakayama and Katsunori Asano and Tetsuya Miyazawa and Hidekazu Tsuchida

20 Electrical characteristics of TiW/ZnO Schottky contact with ALD and PLDMei Shen and Amir Afshar and Manisha Gupta and Gem Shoute and Ken Cadien and Ying Yin Tsui and Doug Barlage

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