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Summary
Summary
Uncover the Defects that Compromise Performance and Reliability
As microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.
A comprehensive survey of defects that occur in silicon-based metal-oxide semiconductor field-effect transistor (MOSFET) technologies, this book also discusses flaws in linear bipolar technologies, silicon carbide-based devices, and gallium arsenide materials and devices. These defects can profoundly affect the yield, performance, long-term reliability, and radiation response of microelectronic devices and integrated circuits (ICs). Organizing the material to build understanding of the problems and provide a quick reference for scientists, engineers and technologists, this text reviews yield- and performance-limiting defects and impurities in the device silicon layer, in the gate insulator, and/or at the critical Si/SiO2 interface. It then examines defects that impact production yield and long-term reliability, including:
Vacancies, interstitials, and impurities (especially hydrogen) Negative bias temperature instabilities Defects in ultrathin oxides (SiO2 and silicon oxynitride)Take A Proactive Approach
The authors condense decades of experience and perspectives of noted experimentalists and theorists to characterize defect properties and their impact on microelectronic devices. They identify the defects, offering solutions to avoid them and methods to detect them. These include the use of 3-D imaging, as well as electrical, analytical, computational, spectroscopic, and state-of-the-art microscopic methods. This book is a valuable look at challenges to come from emerging
Author Notes
Daniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf
Table of Contents
Defects in Ultra-Shallow JunctionsM. E. Law and R. Camillo-Castillo and L. Robertson and K. S. Jones |
Hydrogen-Related Defects in Silicon, Germanium, and Silicon-Germanium AlloysA.R. Peaker and V.P. Markevich and L. Dobaczewski |
Defects in Strained-Si MOSFETsY. Sun and S. E. Thompson |
The Effect of Defects on Electron Transport in Nanometer-Scale Electronic Devices: Impurities and Interface RoughnessM.V. Fischetti and S. Jin |
Electrical Characterization of Defects in Gate DielectricsD. K. Schroder |
Dominating Defects in the MOS System: Pb and E0 CentersP. M. Lenahan |
Oxide Traps, Border Traps, and Interface Traps in SiO2D. M. Fleetwood and S. T. Pantelides and R. D. Schrimpf |
From 3D Imaging of Atoms to Macroscopic Device PropertiesS. J. Pennycook and M. F. Chisholm and K. van Benthem and A. G. Marinopoulos and S. T. Pantelides |
Defect Energy Levels in HfO2 and Related High-K Gate OxidesJ. Robertson and K. Xiong and K. Tse |
Spectroscopic Studies of Electrically Active Defects in High-K Gate DielectricsG. Lucovsky |
Defects in CMOS Gate DielectricsE. Garfunkel and J. Gavartin and G. Bersuker |
Negative Bias Temperature Instabilities in High-k Gate DielectricsM. Houssa and M. Aoulaiche and S. De Gendt and G. Groeseneken and M. M. Heyns |
Defect Formation and Annihilation in Electronic Devices and the Role of HydrogenL. Tsetseris and D. M. Fleetwood and R. D. Schrimpf and S. T. Pantelides |
Toward Engineering Modeling of Negative Bias Temperature InstabilityT. Grasser and W. Goes and B. Kaczer |
Wear-Out and Time-Dependent Dielectric Breakdown in Silicon OxidesJ. S. Suehle |
Defects Associated with Dielectric Breakdown in SiO2-Based Gate DielectricsJ. Sun(c) and E. Y. Wu |
Defects in Thin and Ultrathin Silicon DioxidesG. Cellere and S. Gerardin and A. Paccagnella |
Structural Defects in SiO2-Si Caused by Ion BombardmentA. D. Touboul and A. Carvalho and M. Marinoni and F. Saigne and J. Bonnet and J. Gasiot |
Impact of Radiation-Induced Defects on Bipolar Device OperationR. D. Schrimpf and D. M. Fleetwood and R. L. Pease and L. Tsetseris and S. T. Pantelides |
Silicon Dioxide-Silicon Carbide Interfaces: Current Status and Recent AdvancesS. Dhar and S. T. Pantelides and J. R. Williams and L. C. Feldman |
Defects in SiCE. Janzen and A. Gali and A. Henry and I. G. Ivanov and B. Magnusson and N. T. Son |
Defects in Gallium ArsenideJ. C. Bourgoin and H. J. von Bardeleben |
Appendix: Selected High-Impact Journal Articles on Defects in Microelectronic Materials and Devices |