Porous silicon carbide and gallium nitride : epitaxy, catalysis, and biotechnology applications

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Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Author Notes

Randall M. Feenstra, Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania, USA
Colin E.C. Wood Electronics Division, US Office of Naval Research, Arlington, Virginia, USA

Preface	p. xi
1 Porous SiC Preparation, Characterization and Morphology	p. 1
1.1 Introduction	p. 1
1.2 Triangular Porous Morphology in n-type 4H-SiC	p. 2
1.2.1 Crystal Anodization	p. 2
1.2.2 Description of the Porous Structure	p. 3
1.2.3 Model of the Morphology	p. 9
1.3 Nano-columnar Pore Formation in 6H-SiC	p. 15
1.3.1 Experimental	p. 15
1.3.2 Results	p. 16
1.3.3 Discussion	p. 18
1.4 Summary	p. 26
Acknowledgements	p. 27
References	p. 27
2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation	p. 31
2.1 Introduction	p. 31
2.2 Formation of Porous Layer	p. 32
2.3 Diffusion in Porous SiC	p. 42
2.4 Oxidation	p. 47
2.5 Contacts to Porous SiC	p. 49
Acknowledgements	p. 53
References	p. 53
3 Growth of SiC on Porous SiC Buffer Layers	p. 55
3.1 Introduction	p. 55
3.2 SiC CVD Growth	p. 57
3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy	p. 58
3.3.1 Growth on Porous Si Substrates	p. 58
3.3.2 Growth on Stabilized Porous Si Substrates	p. 62
3.4 Growth of 3C-SiC on Porous 3C-SiC	p. 64
3.4.1 Growth in LPCVD Cold-wall Reactor	p. 64
3.5 Growth of 4H-SiC on Porous 4H-SiC	p. 67
3.6 Conclusion	p. 73
Acknowledgements	p. 74
References	p. 74
4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching	p. 77
4.1 Introduction	p. 77
4.2 Creation of Porous GaN by Electroless Etching	p. 78
4.3 Morphology Characterization	p. 80
4.3.1 Porous GaN Derived from Unintentionally Doped Films	p. 80
4.3.2 Transmission Electron Microscopy (TEM) Characterization	p. 84
4.4 Luminescence of Porous GaN	p. 85
4.4.1 Cathodoluminescence (CL) of Porous GaN	p. 86
4.4.2 Photoluminescence (PL) of Porous GaN	p. 88
4.5 Raman Spectroscopy of Porous GaN	p. 89
4.5.1 Characteristics of Raman scattering in GaN	p. 89
4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap	p. 91
4.6 Summary and Conclusions	p. 95
Acknowledgements	p. 95
References	p. 95
5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy	p. 101
5.1 Introduction	p. 101
5.2 Morphology and Preparation of Porous SiC Substrates	p. 104
5.2.1 Porous Substrates	p. 104
5.2.2 Hydrogen Etching	p. 105
5.3 MBE Growth of GaN on Porous SiC Substrates	p. 108
5.3.1 Experimental Details	p. 108
5.3.2 Film Structure	p. 110
5.3.3 Film Strain	p. 114
5.4 Summary	p. 116
Acknowledgements	p. 117
References	p. 117
6 GaN Lateral Epitaxy Growth Using Porous SiN[subscript x], TiN[subscript x] and SiC	p. 121
6.1 Introduction	p. 121
6.2 Epitaxy of GaN on Porous SiN[subscript x] Network	p. 122
6.2.1 Three-step Growth Method	p. 123
6.2.2 Structural and Optical Characterization	p. 128
6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates	p. 135
6.2.4 Deep Level Transition Spectrum	p. 138
6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN	p. 140
6.3.1 Formation of Porous TiN	p. 140
6.3.2 Growth of GaN on Porous TiN	p. 142
6.3.3 Characterization by XRD	p. 146
6.3.4 Characterization by TEM	p. 146
6.3.5 Characterization by PL	p. 152
6.4 Growth of GaN on Porous SiC	p. 154
6.4.1 Fabrication of Porous SiC	p. 156
6.4.2 GaN Growth on Hydrogen Polished Porous SiC	p. 157
6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC	p. 164
Acknowledgements	p. 167
References	p. 167
7 HVPE Growth of GaN on Porous SiC Substrates	p. 171
7.1 Introduction	p. 171
7.2 PSC Substrate Fabrication and Properties	p. 172
7.2.1 Formation of Various Types of SPSC Structure	p. 173
7.2.2 Dense Layer	p. 177
7.2.3 Monitoring of Anodization Process	p. 178
7.2.4 Vacancy Model of Primary Pore Formation	p. 183
7.2.5 Stability of SPSC Under Post-Anodization Treatment	p. 190
7.3 Epitaxial Growth of GaN Films on PSC Substrates	p. 195
7.3.1 The Growth and Its Effect on the Structure of the PSC Substrate	p. 195
7.3.2 Properties of the GaN Films Grown	p. 198
7.4 Summary	p. 206
References	p. 207
8 Dislocation Mechanisms in GaN Films Grown on Porous Substrates or Interlayers	p. 213
8.1 Introduction	p. 213
8.2 Extended Defects in Epitaxially Grown GaN Thin Layers	p. 214
8.3 Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN	p. 217
8.4 Growth of GaN on Porous SiC Substrates	p. 220
8.5 Growth of GaN on Porous SiN and TiN Interlayers	p. 222
8.5.1 GaN Growth on a TiN Interlayer	p. 223
8.5.2 GaN Growth on a SiN Interlayer	p. 224
8.6 Summary	p. 226
Acknowledgements	p. 227
References	p. 227
9 Electrical Properties of Porous SiC	p. 231
9.1 Introduction	p. 231
9.2 Resistivity and Hall Effect	p. 232
9.3 Deep Level Transient Spectroscopy	p. 234
9.3.1 Fundamentals of DLTS	p. 234
9.3.2 Method of Solving the General Equation	p. 236
9.4 Sample Considerations	p. 237
9.5 Potential Energy Near a Pore	p. 238
9.6 DLTS Data and Analysis	p. 240
Acknowledgements	p. 243
References	p. 243
10 Magnetism of Doped GaN Nanostructures	p. 245
10.1 Introduction	p. 245
10.2 Mn-Doped GaN Crystal	p. 247
10.3 Mn-Doped GaN Thin Films	p. 248
10.3.1 Mn-Doped GaN (1120) Surface	p. 249
10.3.2 Mn-Doped GaN (1010) Surface	p. 252
10.3.3 Mn and C Codoped in GaN (1010) Surface	p. 257
10.4 Mn- and Cr-Doped GaN One-Dimensional Structures	p. 259
10.4.1 Mn-Doped GaN Nanowires	p. 259
10.4.2 Cr-Doped GaN Nanotubes	p. 262
10.4.3 Cr-Doped GaN Nanohole Arrays	p. 265
10.5 N-Doped Mn and Cr Clusters	p. 268
10.5.1 Giant Magnetic Moments of Mn[subscript x]N Clusters	p. 268
10.5.2 N-induced Magnetic Transition in Small Cr[subscript x]N Clusters	p. 269
10.6 Summary	p. 270
Acknowledgements	p. 271
References	p. 271
11 SiC Catalysis Technology	p. 275
11.1 Introduction	p. 275
11.2 Silicon Carbide Support	p. 276
11.3 Heat Effects During Reaction	p. 277
11.4 Reactions on SiC as Catalytic Supports	p. 278
11.5 Examples of SiC Catalyst Applications	p. 279
11.5.1 Pt/[beta]-SiC Catalyst for Catalytic Combustion of Carbon Particles in Diesel Engines	p. 279
11.5.2 Complete Oxidation of Methane	p. 280
11.5.3 SiC-Supported MoO[subscript 3]-Carbon-Modified Catalyst for the n-Heptane Isomerization	p. 280
11.5.4 Selective Oxidation of H[subscript 2]S Over SiC-Supported Iron Catalysts into Elemental Sulfur	p. 281
11.5.5 Partial Oxidation of n-Butane to Maleic Anhydride Using SiC-Mixed and Pd-Modified Vanadyl Pyrophosphate (VPO) Catalysts (Case study)	p. 282
11.6 Prospects and Conclusions	p. 288
References	p. 289
12 Nanoporous SiC as a Semi-Permeable Biomembrane for Medical Use: Practical and Theoretical Considerations	p. 291
12.1 The Rationale for Implantable Semi-Permeable Materials	p. 291
12.2 The Biology of Soluble Signaling Proteins in Tissue	p. 292
12.3 Measuring Cytokine Secretion In Living Tissues and Organs	p. 294
12.4 Creating a Biocompatible Tissue - Device Interface: Advantages of SiC	p. 295
12.5 The Testing of SiC Membranes for Permeability of Proteins	p. 296
12.6 Improving the Structure of SiC Membranes for Biosensor Interfaces	p. 299
12.7 Theoretical Considerations: Modeling Diffusion through a Porous Membrane	p. 301
12.7.1 Effective Medium Models for a Porous Membrane	p. 302
12.7.2 Comparison with Experiment	p. 304
12.8 Future Development: Marriage of Membrane and Microchip	p. 305
12.9 Conclusions	p. 307
Acknowledgements	p. 307
References	p. 308
Index	p. 311

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