Surfaces, interfaces, and thin films for microelectronics

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Title:

Personal Author:

Irene, Eugene A.

Publication Information:

Hoboken, NJ : Wiley-Interscience, 2008

ISBN:

9780470174470

Subject Term:

Surface chemistry

Interfaces (Physical sciences)

Thin films

Microelectronics -- Materials

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010160399	QD506 I73 2008	Open Access Book	Book	Searching... Unknown

The practical, accessible independent-study guide and text on surface science fundamentals and microelectronics processes, this reference explains key concepts and important analytical techniques. It discusses films and interfaces, electronic passivation of semiconductor-dielectric film interfaces, the Si-SiO2 interface, and other MOSFET interfaces, and includes figures, charts, exercises, and examples of applications. This is the ideal guide to help professionals in the electronics industry get up to speed fast. It is also an excellent text for upper-level graduate and undergraduate students.

Author Notes

Eugene A. Irene is Professor of Chemistry at the University of North Carolina, Chapel Hill.

Preface	p. xi
Part I Fundamentals of Surfaces and Interfaces	p. 1
1 Introduction to Surfaces	p. 3
1.1 Introduction	p. 3
1.2 Definition of a Surface	p. 5
1.3 Preparing Surfaces	p. 8
1.4 Simple Model for a Surface: Terrace-Ledge-Kink Model	p. 9
1.4.1 Oxidation of Various Si Single-Crystal Orientations	p. 15
1.5 Roughness	p. 18
1.6 Summary of the Key Surface Concepts	p. 19
References	p. 20
Suggested Reading	p. 20
2 Structure of Surfaces	p. 21
2.1 Introduction	p. 21
2.2 Reciprocal Space (RESP)	p. 22
2.2.1 Why Reciprocal Space?	p. 22
2.2.2 Definition of RESP	p. 22
2.3 The Ewald Construction	p. 26
2.4 Diffraction Techniques	p. 27
2.4.1 Rotating Crystal Method	p. 28
2.4.2 Powder Method	p. 28
2.4.3 Laue Method	p. 29
2.5 Wave Vector Representation-k Space	p. 30
2.6 Diffraction from Surfaces	p. 31
2.6.1 RESP and Ewald Construction for Surfaces	p. 31
2.6.2 Low Energy Electron Diffraction	p. 34
2.6.3 The LEED Pattern and Reconstruction	p. 38
2.6.4 Indexing LEED Patterns and Surface Structure Nomenclature	p. 40
2.6.5 LEED of Si(100)	p. 45
2.7 Electron Microscopy	p. 45
2.7.1 Transmission Electron Microscopy	p. 46
2.7.1.1 Sample Preparation	p. 49
2.7.1.2 TEM Results	p. 52
2.7.2 Scanning Electron Microscopy	p. 58
2.7.2.1 SEM Results	p. 63
References	p. 63
Suggested Reading	p. 63
3 Thermodynamics of Surfaces and Interfaces	p. 65
3.1 Introduction	p. 65
3.2 Surface Energy	p. 65
3.3 Principles of Capillarity	p. 67
3.3.1 Definitions	p. 67
3.3.2 Curved Surfaces	p. 69
3.4 Surface Energy of Solids	p. 73
3.5 Interfaces and More Capillarity	p. 79
3.6 SiO[subscript 2]-Si Interface Application	p. 83
References	p. 88
Suggested Reading	p. 88
4 Surface Roughness	p. 89
4.1 Introduction	p. 89
4.2 Roughness Parameters	p. 90
4.2.1 Height Parameters	p. 90
4.2.2 Roughness Period or Wavelength	p. 92
4.2.3 Shape of Rough Features	p. 93
4.2.4 Statistical Descriptors of Roughness	p. 95
4.2.5 Fractal Description of Roughness	p. 99
4.2.5.1 Fractal Definitions	p. 99
4.2.5.2 Extraction of the Fractal Dimension from Experimental Data	p. 104
4.3 Roughness Effects on the Properties of Materials	p. 106
4.3.1 Effects of Roughness on Optical Properties	p. 106
4.3.2 Roughness Effects on Electronic Properties	p. 108
4.3.3 Roughness Effects on Other Physical and Chemical Properties	p. 112
4.3.3.1 Roughness Effects on Contact Angle	p. 112
4.3.3.2 Roughness Effects on Surface Thermodynamic Properties	p. 113
4.3.3.3 Roughness Effects on Chemical Reactivity	p. 115
References	p. 121
5 Surface Electronic States	p. 123
5.1 Introduction	p. 123
5.2 The Kronig-Penney Model	p. 124
5.2.1 The KP Model for Infinite Solids	p. 124
5.2.2 The KP Model Extended for Finite Solids	p. 131
5.3 Other Models for Surface States	p. 135
5.3.1 Extrinsic Surface States	p. 137
5.3.2 Band Bending	p. 138
5.4 Measurement of Surface Electronic States	p. 139
5.4.1 Thermionic and Field Emission	p. 139
5.4.2 Kelvin Probe	p. 146
5.4.3 Photoemission	p. 148
5.4.3.1 Ultraviolet Photoemission Spectroscopy (UPS) and Inverse Photoelectron Spectroscopy (IPES)	p. 151
5.4.3.2 X-Ray Photoelectron Spectroscopy (XPS)	p. 156
References	p. 156
Suggested Reading	p. 157
6 Other Surface Probes	p. 159
6.1 Surface Topology or Morphology: Scanning Probe Microscopy	p. 159
6.1.1 Scanning Tunneling Microscopy	p. 161
6.1.1.1 Electron Tunneling	p. 161
6.1.1.2 Scanning Tunneling Microscopy Operation	p. 168
6.1.1.3 Applications	p. 172
6.1.2 Atomic Force Microscopy	p. 176
6.1.2.1 Atomic Force Microscopy Operation	p. 177
6.2 Surface Composition: Auger Electron Spectroscopy and Ion Scattering and Recoil Spectroscopy	p. 181
6.2.1 Auger Electron Spectroscopy	p. 181
6.2.2 Ion Scattering	p. 184
6.2.2.1 Time-of-Flight Ion Scattering and Recoil Spectrometry	p. 185
6.2.2.2 Ion Scattering Spectroscopy	p. 189
6.2.2.3 Direct Recoil Spectroscopy	p. 190
6.2.2.4 Mass Spectroscopy of Recoiled Ions	p. 190
6.2.2.5 Mass Spectroscopy of Recoiled Ions Applications	p. 192
References	p. 197
Suggested Reading	p. 197
7 Charged Surfaces	p. 199
7.1 Introduction	p. 199
7.2 Electrostatics and the Poisson Equation	p. 200
7.3 Two Simple Solutions to the Poisson Equation	p. 205
7.4 Metal-Oxide-Semiconductor Field-Effect Transistor and Fermi Level Pinning	p. 209
7.5 Metal-Oxide-Semiconductor Measurements for Interface Charge	p. 213
7.5.1 Oxide Charges	p. 219
7.5.2 Measurement of Charges in the Si-SiO[subscript 2] System	p. 224
References	p. 228
Suggested Reading	p. 228
8 Adsorption	p. 229
8.1 Introduction	p. 229
8.2 Physisorption	p. 230
8.3 Chemisorption	p. 233
8.4 Vapor-Solid Equilibrium at Surfaces	p. 236
8.5 Adsorption Isotherms	p. 238
8.6 Surface Reaction Mechanisms	p. 243
8.7 Temperature-Programmed Desorption	p. 248
References	p. 255
Suggested Reading	p. 255
9 Ellipsometry and Optical Properties of Surfaces, Interfaces, and Films	p. 257
9.1 Introduction	p. 257
9.2 What Is Ellipsometry?	p. 258
9.3 What Does Ellipsometry Measure?	p. 263
9.4 How Well Can Ellipsometry Measure?	p. 264
9.5 Optical Models	p. 266
9.6 Manual and Automated Ellipsometry Techniques	p. 274
9.6.1 Introduction	p. 274
9.6.2 Isotropic Media	p. 276
9.6.3 Linear Polarizer	p. 277
9.6.4 Compensator	p. 279
9.6.5 Detectors	p. 280
9.6.6 Null Ellipsometry	p. 280
9.6.7 Rotating Element Ellipsometry	p. 282
9.6.8 Spectroscopic Ellipsometry	p. 284
9.6.9 Ellipsometry Alignment and Calibration	p. 286
9.7 Ellipsometry Measurements	p. 287
9.7.1 The Si Surface	p. 288
9.7.2 Surface with Overlayer	p. 289
References	p. 293
Suggested Reading	p. 293
Part II Microelectronics Applications	p. 295
10 Films and Interfaces	p. 297
10.1 Introduction	p. 297
10.2 Nucleation	p. 298
10.2.1 Homogenous Nucleation	p. 299
10.2.1.1 Mixing	p. 304
10.2.1.2 Volmer-Weber Theory	p. 305
10.2.2 Heterogeneous Nucleation	p. 308
10.2.3 Nucleation Studies	p. 312
10.3 Film Formation	p. 321
10.3.1 Film Growth	p. 324
10.3.2 Film Deposition	p. 329
10.3.2.1 Chemical Vapor Deposition	p. 329
10.3.2.2 Physical Vapor Deposition	p. 333
References	p. 349
Suggested Reading	p. 349
11 Electronic Passivation of Semiconductor-Dielectric Film Interfaces	p. 351
11.1 Introduction	p. 351
11.2 Interface Electronic States	p. 351
11.3 Electronic Passivation	p. 361
11.4 Semiconductor Passivation Studies	p. 363
11.4.1 Si Thermal and Plasma Oxidation	p. 363
11.4.2 Ge Passivation via Thermal and ECR Plasma Oxidation and SiO[subscript 2] Deposition	p. 372
11.4.3 InP Passivation via Thermal and ECR Plasma Oxidation and SiO[subscript 2] Deposition	p. 382
11.4.4 GaAs Passivation via Thermal and ECR Plasma Oxidation and SiO[subscript 2] Deposition	p. 392
11.5 High Static Dielectric Constant Gate Oxides	p. 403
11.5.1 Barium Strontium Titanate	p. 405
11.5.2 ZrO[subscript 2], HfO[subscript 2], and MgO as Potential High K Dielectrics	p. 419
References	p. 434
Suggested Reading	p. 435
12 The Si-SiO[subscript 2] Interface and Other MOSFET Interfaces	p. 437
12.1 Introduction	p. 437
12.2 Nature of the Si-SiO[subscript 2] Interface	p. 438
12.3 Other Techniques for Interface Studies	p. 445
12.3.1 Spectroscopic Immersion Ellipsometry (SIE)	p. 445
12.3.2 Tunneling Currents for Measurement of Refractive Index, Film Thickness, and Roughness	p. 453
12.3.2.1 Tunneling Current Oscillation Measurement	p. 453
12.3.2.2 Application to SiO[subscript 2]: Refractive Index, Film Thickness, and Roughness	p. 457
12.3.3 Interfacial and Film Stress	p. 478
12.4 Other Microelectronics Interfaces	p. 490
12.4.1 Introduction	p. 490
12.4.2 Electronic Characteristics of Junctions	p. 490
12.4.3 Ideal Metal-Semiconductor Junctions	p. 492
12.4.4 Ideal Semiconductor-Semiconductor PN Junctions	p. 495
12.4.5 Nonideal Junctions	p. 496
References	p. 501
Suggested Reading	p. 502
Index	p. 503

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Table of Contents