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Summary
Summary
With increasingly low-cost and power-efficient RF electronics demanded by today's wireless communication systems, it is essential to keep up to speed with new developments. This book presents key advances in the field that you need to know about and emerging patterns in large-signal measurement techniques, modeling and nonlinear circuit design theory supported by practical examples. Topics covered include: * Novel large-signal measurement techniques that have become available with the introduction of nonlinear vector network analyzers (NVNA), such as the LSNA, PNA-X and SWAP * Direct extraction of device models from large-signal RF dynamic loadlines * Characterization of memory effects (self-heating, traps) with pulsed RF measurements * Interactive design of power-efficient amplifiers (PA) and oscillators using ultra-fast multi-harmonic active load-pull * Volterra and poly-harmonic distortion (X-parameters) behavioral modeling * Oscillator phase noise theory * Balancing, modeling and poly-harmonic linearization of broadband RFIC modulators * Development of a frequency selective predistorter to linearize PAs
Author Notes
Patrick Roblin is a Professor in the Department of Electrical and Computer Engineering at Ohio State University (OSU). He is the founder of the Nonlinear RF Research Laboratory at OSU and previously co-wrote the book High-Speed Heterostructure Devices (Cambridge University Press, 2002).
Table of Contents
Preface | p. xi |
Acknowledgments | p. xiv |
1 Wireless signals | p. 1 |
1.1 Modern wireless communications | p. 1 |
1.2 OFDM primer | p. 3 |
1.3 Impact of clipping on OFDM | p. 9 |
1.4 Spectral regrowth and clipping | p. 12 |
1.5 Metrics | p. 13 |
1.6 Multisine | p. 14 |
References | p. 15 |
2 Large-signal vector measurement techniques with NVNAs | p. 17 |
2.1 Measurement of RF signals | p. 17 |
2.2 Principle of operation of vector large-signal measurements | p. 19 |
2.3 Sampler-based principle of operation | p. 23 |
2.4 Relative and absolute power and harmonic phase calibrations | p. 27 |
2.4.1 Calibration for connectorized devices | p. 27 |
2.4.2 On-wafer calibration | p. 33 |
2.5 Tuner deembedding with the LSNA | p. 35 |
2.5.1 Definitions | p. 36 |
2.5.2 Extraction of ßC, ¿C, and ¿C in TC | p. 38 |
2.5.3 Extraction of (1/KC)TP | p. 38 |
2.5.4 Extraction of LRRM(Zx) | p. 39 |
2.6 Modulated measurements and IF calibration | p. 39 |
2.6.1 Absolute time reference calibration for RF modulated measurements | p. 40 |
2.7 Broadband measurements with the LSNA | p. 42 |
2.7.1 Principle of phase calibration | p. 44 |
2.7.2 Experimental results and discussions | p. 48 |
2.8 Pulsed-RF small- and large-signal measurements | p. 51 |
2.8.1 Analysis of pulsed-RF signals | p. 52 |
2.8.2 Pulsed I-V pulsed-RF measurement system with the LSNA | p. 53 |
2.8.3 Measurement bandwidth | p. 55 |
2.8.4 Envelope analysis of pulsed-RF signals | p. 56 |
2.9 Multiple recording of pulsed-RF signals | p. 58 |
2.9.1 Multiple recording for CW signals | p. 59 |
2.9.2 Multiple recording for jointly pulsed and modulated signals | p. 62 |
References | p. 63 |
3 Device modeling and verification with NVNA measurements | p. 66 |
3.1 Model verification | p. 66 |
3.2 Model symmetry | p. 72 |
3.3 Device parasitics | p. 75 |
3.4 Model extraction from power-sweep measurements | p. 81 |
3.5 Model extraction from dynamic loadline measurements | p. 83 |
References | p. 87 |
4 Characterization and modeling of memory effects in RF power transistors | p. 89 |
4.1 Importance of memory effects in RF devices | p. 89 |
4.2 Distributed and transient models for self-heating in power transistors | p. 90 |
4.2.1 Steady-state thermal modeling | p. 90 |
4.2.2 Implementation of the distributed thermal model | p. 92 |
4.2.3 Transient thermal response | p. 94 |
4.2.4 Modeling of the transient thermal response | p. 96 |
4.3 Identification of self-heating using pulsed I-V pulsed-RF measurements | p. 98 |
4.3.1 CW dynamic loadline measurement system | p. 99 |
4.3.2 Pulsed I-V pulsed-RF loadline measurement system | p. 99 |
4.3.3 Origin of the I-V knee walk-out in the CW-RF loadlines | p. 100 |
4.4 Trapping in GaN HEMTs | p. 103 |
4.5 Characterization with a combined LSNA/DLOS system | p. 105 |
4.6 Quasi-static device parasitics | p. 108 |
4.7 Rate equation for physical modeling of trapping effects | p. 111 |
4.8 Two-trap-level model | p. 113 |
4.9 Cyclostationary effect | p. 115 |
4.9.1 Theory | p. 115 |
4.9.2 Experimental investigations | p. 116 |
References | p. 120 |
5 Interactive loadline-based design of RF power amplifiers | p. 124 |
5.1 Review of power amplifiers of various classes (A-F) | p. 124 |
5.2 Output termination with load-pull measurements | p. 134 |
5.2.1 Active load-pull measurements | p. 135 |
5.2.2 Real-time active load-pull measurements | p. 136 |
5.3 Class-F design with RTALP | p. 140 |
5.4 Complete design cycle for a pHEMT amplifier | p. 147 |
5.5 RTALP of PAs for pulsed I-V pulsed-RF class-B operation | p. 150 |
5.6 P1dB contour plot | p. 154 |
5.7 Class-E PA operation | p. 155 |
References | p. 158 |
6 Behavioral modeling | p. 160 |
6.1 Behavioral model for SISO and MIMO systems | p. 160 |
6.2 Volterra modeling | p. 161 |
6.2.1 Volterra algorithm | p. 162 |
6.2.2 Model derivation | p. 165 |
6.2.3 Analytic example | p. 168 |
6.2.4 Model extraction | p. 171 |
6.2.5 Experimental model extraction and validation | p. 172 |
6.2.6 Phase reference | p. 174 |
6.2.7 Poly-harmonic distortion model (PHD) | p. 175 |
6.3 Single-band multi-harmonic envelope PA model | p. 179 |
6.3.1 Input signal | p. 180 |
6.3.2 Orthogonal Chaillot expansion | p. 180 |
6.3.3 Memoryless nonlinear system modeling | p. 183 |
6.3.4 Quasi-memoryless nonlinear system modeling | p. 185 |
6.3.5 Power-series expansion | p. 186 |
6.3.6 Multi-path model partitioning | p. 187 |
6.3.7 Time-selective single-band multi-harmonic envelope PA model | p. 187 |
6.4 Two-band fundamental envelope PA model | p. 190 |
6.4.1 Nonlinear power-amplifier characterization with NVNA | p. 192 |
6.4.2 Extension to higher-order nonlinearities | p. 194 |
6.4.3 Modulated two-band model | p. 195 |
6.5 Appendix: Volterra series expansion for a four-tone excitation | p. 198 |
References | p. 200 |
7 Kurokawa theory of oscillator design and phase-noise theory | p. 201 |
7.1 Oscillator operating point | p. 201 |
7.2 Kurokawa theory of oscillators | p. 203 |
7.3 Vector measurement of device line with real-time active load-pull | p. 207 |
7.3.1 Test oscillator circuit | p. 207 |
7.3.2 Real-time multi-harmonic active load-pull system | p. 208 |
7.3.3 Experimental results | p. 209 |
7.3.4 Self-oscillation test | p. 213 |
7.4 Impact of white noise on an oscillator | p. 215 |
7.5 Impact of 1/f noise on an oscillator | p. 222 |
7.5.1 Derivation of Sa,1/f(¿¿) | p. 223 |
7.5.2 Derivation of S¿,1/f(¿¿) | p. 224 |
7.5.3 Range of validity of the Kurokawa equations | p. 227 |
7.6 Injection locking and additive phase-noise measurements | p. 229 |
7.6.1 Theory | p. 229 |
7.6.2 Experimental measurements | p. 233 |
References | p. 235 |
8 Design, modeling, and linearization of mixers, modulators, and demodulators | p. 237 |
8.1 Vector characterization of an I-Q modulator | p. 237 |
8.1.1 Balancing of an I-Q modulator | p. 237 |
8.1.2 K modeling | p. 238 |
8.1.3 I-Q modulator characterization with LSNA | p. 240 |
8.1.4 K modeling of an I-Q modulator and an I-Q demodulator chain | p. 243 |
8.2 Polyphase multi-path technique | p. 248 |
8.2.1 Nonlinear behavior | p. 249 |
8.2.2 Polyphase multi-path technique | p. 249 |
8.3 Poly-harmonic modeling of a single-sideband modulator | p. 253 |
8.3.1 Theory | p. 253 |
8.3.2 Poly-harmonic predistortion linearization test results | p. 257 |
References | p. 261 |
9 Linearization of RF power amplifiers with memory | p. 262 |
9.1 Predistortion linearization and the impact of memory effects | p. 262 |
9.2 Predistortion for quasi-memoryless amplifiers | p. 266 |
9.3 Linearization for PAs modeled with memory polynomials | p. 269 |
9.4 Two-band frequency-selective predistorter | p. 274 |
References | p. 279 |
Index | p. 280 |