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Basics of CMOS cell design
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New York, NY : McGraw-Hill Professional, 2007
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9780071488396
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30000010139684 TK7871.99.M44 S524 2007 Open Access Book Book
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Summary

Summary

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Design and Simulate Any Type of CMOS Circuit!

Electronic circuit designers and electronic engineering students can turn to Basics of CMOS Cell Design for a practice-based introduction to the design and simulation of every major type of CMOS (complementary metal oxide semiconductor) integrated circuit.

You will find step-by-step explanations of everything they need for designing and simulating CMOS integrated circuits in deep-submicron technology, including MOS devices...inverters...interconnects...basic gates ...arithmetics...sequential cell design...and analog basic cells.

The book also presents design rules, Microwind program operation and commands, design logic editor operation and commands, and quick-reference sheets. Filled with 100 skills-building illustrations, Basics of CMOS Cell Design features:

Expert guidance on MOS device modeling Complete details on micron and deep-submicron technologies Clear, concise information on basic logic gates Full coverage of analog cells A wealth of circuit simulation tools

Inside This Landmark CMOS Circuit Design Guide--

* MOS Devices and Technology * MOS Modeling * The Inverter * Interconnects * Basic Gates * Arithmetics * Sequential Cell Design * Analog Cells * Appendices: Design Rules; Microwind Program Operation and Commands; Design Logic Editor Operation and Commands; Quick- Reference Sheets


Author Notes

Dr. Etienne Sicard is professor of electronic engineering at the INSA Electronic Engineering School of Toulouse, France
Dr. Sonia Delmas Bendhia is a senior lecturer in the Department of Electrical and Computer Engineering at the INSA Electronic Engineering School of Toulouse, France


Table of Contents

Prefacep. vii
Acknowledgmentsp. ix
Abbreviations and Symbolsp. xv
1 Introductionp. 1
1.1 General Trendsp. 1
1.2 The Device Scale Downp. 5
1.3 Frequency Improvementsp. 5
1.4 Layersp. 6
1.5 Densityp. 8
1.6 Design Trendsp. 10
1.7 Marketp. 11
1.8 Conclusionp. 11
Referencesp. 11
Exercisesp. 12
2 The MOS Devices and Technologyp. 13
2.1 Properties of Siliconp. 13
2.2 N-type and P-type Siliconp. 16
2.3 Silicon Dioxidep. 18
2.4 Metal Materialsp. 19
2.5 The MOS Switchp. 20
2.6 The MOS Aspectp. 23
2.7 MOS Layoutp. 25
2.8 Dynamic MOS Behaviourp. 32
2.9 The Perfect Switchp. 38
2.10 Layout Considerationsp. 41
2.11 CMOS Processp. 44
2.12 Conclusionp. 48
Referencesp. 48
Exercisesp. 48
3 The MOS Modellingp. 51
3.1 Introduction to Modellingp. 51
3.2 MOS Model 1p. 53
3.3 MOS Model 3p. 57
3.4 The BSIM4 MOS Modelp. 66
3.5 Specific MOS Devicesp. 80
3.6 Process Variationsp. 87
3.7 Concluding Remarksp. 90
Referencesp. 91
Exercisesp. 91
4 The Inverterp. 93
4.1 Logic Symbolp. 93
4.2 CMOS Inverterp. 94
4.3 Inverter Layoutp. 95
4.4 Inverter Simulationp. 104
4.5 Power Consumptionp. 111
4.6 Static Characteristicsp. 114
4.7 Random Simulationp. 118
4.8 The Inverter as a Library Cellp. 120
4.9 3-State Inverterp. 122
4.10 All nMOS Invertersp. 125
4.11 Ring Oscillatorp. 127
4.12 Latch-up Effectp. 133
4.13 Conclusionp. 134
Referencesp. 134
Exercisesp. 135
5 Interconnectsp. 137
5.1 Introductionp. 137
5.2 Metal Layersp. 137
5.3 Contact and Viasp. 139
5.4 Design Rulesp. 142
5.5 Capacitance Associated with Interconnectsp. 146
5.6 Resistance Associated with Interconnectsp. 153
5.7 Signal Transportp. 157
5.8 Improved Signal Transportp. 164
5.9 Repeaters for Improved Signal Transportp. 167
5.10 Crosstalk Effects in Interconnectsp. 169
5.11 Antenna Effectp. 173
5.12 Inductancep. 176
5.13 Conclusionp. 179
Referencesp. 179
Exercisesp. 180
6 Basic Gatesp. 182
6.1 Introductionp. 182
6.2 Combinational Logicp. 182
6.3 CMOS Logic Gate Conceptp. 184
6.4 The NAND Gatep. 185
6.5 The AND Gatep. 202
6.6 The NOR Gatep. 204
6.7 The OR Gatep. 207
6.8 The XOR Gatep. 208
6.9 Complex Gatesp. 214
6.10 Multiplexorp. 218
6.11 Shiftersp. 227
6.12 Description of Basic Gates in Verilogp. 229
6.13 Conclusionp. 231
Referencesp. 231
Exercisesp. 231
7 Arithmeticsp. 233
7.1 Data Formatsp. 233
7.2 The Adder Circuitp. 236
7.3 Adder Cell Designp. 238
7.4 Ripple-carry Adderp. 247
7.5 Signed Adderp. 253
7.6 Fast Adder Circuitsp. 254
7.7 Substractor Circuitp. 258
7.8 Comparator Circuitp. 260
7.9 Student Project: A Decimal Adderp. 262
7.10 Multiplierp. 267
7.11 Conclusionp. 272
Referencesp. 272
Exercisesp. 273
8 Sequential Cell Designp. 274
8.1 The Elementary Latchp. 274
8.2 RS Latchp. 275
8.3 D Latchp. 282
8.4 Edge-trigged D Registerp. 288
8.5 Clock Dividerp. 295
8.6 Synchronous Countersp. 299
8.7 Shift Registersp. 301
8.8 A 24-hour Clockp. 303
8.9 Conclusionp. 307
Referencesp. 307
Exercisesp. 307
9 Analog Cellsp. 309
9.1 Resistorp. 309
9.2 Capacitorp. 314
9.3 The MOS Device for Analog Designp. 321
9.4 Diode-connected MOSp. 324
9.5 Voltage Referencep. 326
9.6 Current Mirrorp. 331
9.7 The MOS Transconductancep. 335
9.8 Single Stage Amplifierp. 336
9.9 Simple Differential Amplifierp. 345
9.10 Wide Range Amplifierp. 354
9.11 On-chip Voltage Regulatorp. 357
9.12 Noisep. 359
9.13 Conclusionp. 361
Referencesp. 361
Exercisesp. 361
10 Conclusionp. 363
Appendices
A Design Rulesp. 364
A.1 Lambda Unitsp. 364
A.2 Layout Design Rulesp. 365
A.3 Padsp. 368
A.4 Electrical Extraction Principlesp. 368
A.5 Node Capacitance Extractionp. 369
A.6 Resistance Extractionp. 372
A.7 Simulation Parametersp. 373
A.8 Technology Files for Dschp. 376
B Microwind Program Operation and Commandsp. 378
B.1 Getting Startedp. 378
B.2 List of Commands in Microwindp. 379
C Dsch Logic Editor Operation and Commandsp. 403
C.1 Getting Startedp. 403
C.2 Commandsp. 403
D Quick Reference Sheetp. 413
D.1 Microwind Menusp. 413
D.2 Microwind Simulation Menup. 416
D.3 Dsch Menusp. 417
D.4 List of Filesp. 419
D.5 List of Measurement Filesp. 419
Glossaryp. 422
Indexp. 424
Software Download Informationp. 428
Authors' Profilesp. 429