Cover image for Simulation and characterization of silicon nanowire field effect transistor with strain effect
Title:
Simulation and characterization of silicon nanowire field effect transistor with strain effect
Physical Description:
axvi, 81 pages : illustrations (some colors) ; 30 cm
General Note:
Also available in CD-ROM : CP 066148 ra

Fulltext is available at http://dms.library.utm.my:8080

Supervisor : Prof. Dr. Razali Ismail
Subject Term:
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DSP_DISSERTATION:
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Elektronik)) - Universiti Teknologi Malaysia, 2017

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32030000002149 TK7872.T73 C43 2017 raf Closed Access Thesis UTM Project Paper (Open Shelves)
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35000000025533 TK7872.T73 C43 2017 raf Closed Access Thesis UTM Project Paper (Closed Access)
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