Title:
Gettering and defect engineering in semiconductor technology XIII - GADEST 2009 : proceedings of the XIIIth international autumn meeting, Döllnsee-Schorfheide, north of of Berlin, Germany, September 26 - October 02 2009
Conference Author:
Series:
Solid state phenomena, . 156-158
Publication Information:
Switzerland : Trans Tech Pubn., 2010
Physical Description:
xiv, 592 p. : ill. ; 25 cm.
ISBN:
9783908451747
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000010222122 | TK7871.85 G32 2010 | Open Access Book | Book | Searching... |
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Summary
Summary
This collection aims to address the fundamental aspects, as well as the technological problems, which are associated with defects in electronic materials and devices.
Table of Contents
| Influence of Defects on Solar Cell Characteristics | p. 1 |
| Dislocation Engineering in Multicrystalline Silicon | p. 11 |
| Grain Boundaries in Multicrystalline Si | p. 19 |
| Analysis of Heterogeneous Iron Precipitation in Multicrystalline Silicon | p. 27 |
| Growth of Silicon Carbide Filaments in Multicrystalline Silicon for Solar Cells | p. 35 |
| Analysis of Silicon Carbide and Silicon Nitride Precipitates in Block Cast Multicrystalline Silicon | p. 41 |
| Investigations on the Behaviour of Carbon during Inductive Melting of Multicrystalline Silicon | p. 49 |
| An Investigation into Fracture of Multi-Crystalline Silicon | p. 55 |
| Strained Silicon Devices | p. 61 |
| Novel Trends in SOI Technology for CMOS Applications | p. 69 |
| Advanced Si-based Semiconductors for Energy and Photonic Applications | p. 77 |
| Si Wafer Bonding: Structural Features of the Interface | p. 85 |
| Buried Insulating Layer Formation in Cz Si Wafers after Helium Implantation, Nitrogen Plasma Treatment and Annealing | p. 91 |
| Growth of Heavily Phosphorus-Doped (111) Silicon Crystals | p. 95 |
| Semi-Insulating Silicon for Microwave Devices | p. 101 |
| Can Impurities be Beneficial to Photovoltaics? | p. 107 |
| Properties of Fast-Diffusing Oxygen Species in Silicon Deduced from the Generation Kinetics of Thermal Donors | p. 115 |
| The Production of Vacancy-Oxygen Defects in Electron-Irradiated Cz-Si Initially Treated at High Temperatures and High Pressures | p. 123 |
| Divacancy-Oxygen and Trivacancy-Oxygen Complexes in Silicon: Local Vibrational Mode Studies | p. 129 |
| Low-Temperature Elastic Softening due to Vacancies in Boron-Doped FZ Silicon Crystals | p. 135 |
| Vacancies and Self-Interstitials Dynamics in Silicon Wafers | p. 139 |
| Interaction of Point Defects with Impurities in the Si-SiO2 System and its Influence on the Properties of the Interface | p. 145 |
| Anomalous Out-Diffusion Profiles of Nitrogen in Silicon | p. 149 |
| DLTS Studies of Carbon Related Complexes in Irradiated N- and P-Silicon | p. 155 |
| Copper In-Depth Distribution in Hydrogen Implanted Cz Si Wafers Subjected to Two-Step Annealing | p. 161 |
| Radiation Defects in Silicon: Effect of Contamination by Platinum Atoms | p. 167 |
| Review of Stress Effects on Dopant Solubility in Silicon and Silicon-Germanium Layers | p. 173 |
| Oxygen Diffusion in Si1-xGex Alloys | p. 181 |
| The Effect of Germanium Doping on the Production of Carbon-Related Defects in Electron-Irradiated Czochralski Silicon | p. 187 |
| Numerical Analysis of mc-Si Crystal Growth | p. 193 |
| Molecular Simulation on Interfacial Structure and Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates | p. 199 |
| Optimization of Silicon Ingot Quality by the Numerical Prediction of Bulk Crystal Defects | p. 205 |
| Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon | p. 211 |
| Thermal Optimization of Cz Silicon Single Crystal Growth | p. 217 |
| Simulation of Iron Distribution after Crystallization of mc Silicon | p. 223 |
| Comparison of Efficiency and Kinetics of Phosphorus-Diffusion and Aluminum Gettering of Metal Impurities in Silicon: a Simulation study | p. 229 |
| Effect of Growth Conditions and Catalyst Material on Nanowhisker Morphology: Monte Carlo Simulation | p. 235 |
| Versatile Simulation Tool and Novel Measurement Method for Electrical Characterization of Semiconductors | p. 241 |
| Simulation of XBIC Contrast of Precipitates in Si | p. 247 |
| Dislocation Nucleation in Heteroepitaxial Semiconducting Films | p. 251 |
| Impurity Engineering of Czochralski Silicon | p. 261 |
| The Role of the Interstitial Oxygen in the Recovery and Evolution of the Boron Implantation Damage | p. 269 |
| Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening | p. 275 |
| Study of the Mechanisms of Oxygen Precipitation in RTA Annealed Cz-Si Wafers | p. 279 |
| Electronic States of Oxygen-Free Dislocation Networks Produced by Direct Bonding of Silicon Wafers | p. 283 |
| Dislocation States and Deformation-Induced Point Defects in Plastically Deformed Germanium | p. 289 |
| Defect Generation during Plastic Deformation of Si-Rich Cz-Grown SiGe Crystals | p. 295 |
| Formation of Radiation-Induced Defects in Si Crystals Irradiated with Electrons at Elevated Temperatures | p. 299 |
| Role of Ion Irradiation Induced Lattice Defects on Nanoscale Capacitive Behavior of Graphene | p. 305 |
| Boron and Phosphorus Implantation Induced Electrically Active Defects in p-Type Silicon | p. 313 |
| Accumulation of Hydrogen within Implantation-Damaged Areas in Processed Si:N and Si:O | p. 319 |
| Influence of Hydrogen on the Structural Stability of Annealed Ultrathin Si/Ge Amorphous Layers | p. 325 |
| Demonstration of Defect-Induced Limitations on the Properties of Au/3C-SiC Schottky Barrier Diodes | p. 331 |
| Suppression of Pores Formation on a Surface of p-Si by Laser Radiation | p. 337 |
| Hydrogenation in Crystalline Silicon Materials for Photovoltaic Application | p. 343 |
| Hydrogen-Induced Passivation of Grain-Boundary Defects in Polycrystalline Silicon | p. 351 |
| Bulk Passivation of Defects in Multi-Crystalline Silicon Solar Cells by a-SiNx:H Layers | p. 357 |
| Passivation of Si Surfaces Investigated by In Situ Photoluminescence Techniques | p. 363 |
| Gettering Efficiency of Si (110)/(100) Directly Bonded Hybrid Crystal Orientation Substrates | p. 369 |
| Trans-RP Gettering and Out-Diffusion of Oxygen Implanted into Highly B-Doped Silicon | p. 375 |
| Iron Gettering in CZ Silicon during the Industrial Solar Cell Process | p. 381 |
| Study of Internal versus External Gettering of Iron during Slow Cooling Processes for Silicon Solar Cell Fabrication | p. 387 |
| Effect of Oxygen in Low Temperature Boron and Phosphorus Diffusion Gettering of Iron in Czochralski-Grown Silicon | p. 395 |
| Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi | p. 401 |
| Quantitative Iron Concentration Imaging | p. 407 |
| EBIC Investigation of the Influence of Hydrogen Passivation on Thin-Film Polycrystalline Silicon Solar Cells Obtained by Aluminium Induced Crystallization and Epitaxy | p. 413 |
| Characterization of Thin Film Photovoltaic Material Using Photoluminescence and Raman Spectroscopy | p. 419 |
| Comparative Study of Electrical and Optical Properties of Plastically Deformed Silicon | p. 425 |
| Spatially Resolved Defect Analysis in Cz-Silicon after Copper-Nickel Co-Precipitation by Virtue of Light-Beam-Induced Current Measurements | p. 431 |
| In Situ Observation of Oxygen Precipitation in Silicon with High Energy X-Rays | p. 437 |
| Delineation of Microdefects in Silicon Substrates by Chromium-Free Preferential Etching Solutions and Laser Scattering Tomography | p. 443 |
| An Express Method for the Study of Planar Homogeneity of Diffusion Lenght in Multicrystalline Solar Silicon | p. 449 |
| Point Defects in #947;-Irradiated Germanium: High- and Low- Momentum Positron Annihilation Study Before and After n-p-Conversion | p. 455 |
| Electron-Beam-Induced Current Study of Breakdown Behavior of High-K Gate MOSFETs | p. 461 |
| Characterization of Semiconductor Films Epitaxially Grown on Thin Metal Oxide Buffer Layers | p. 467 |
| SEM Characterization of Silicon Layers Grown on Carbon Foil | p. 473 |
| Investigation of the Mechanical Properties of Thin Films by Bulge Test | p. 477 |
| Defect Characterization of Poly-Ge and VFG-Grown Ge Material | p. 483 |
| Cathodoluminescence of SiO2/Si System | p. 487 |
| Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC | p. 493 |
| Current Status of Graphene Transistors | p. 499 |
| Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors | p. 511 |
| Scaling in Quantum Transport in Silicon Nano-Transistors | p. 517 |
| Anisotropic Strain - Anisotropic Heating Engineering for Silicon Nanocrystals in SiO2 | p. 523 |
| Silicon Cluster Aggregation in Silica Layers | p. 529 |
| Feedback Effect on the Self-Organized Nanostructures Formation on Silicon upon Femtosecond Laser Ablation | p. 535 |
| Confinement Levels in Passivated SiGe/Si Quantum Well Structures | p. 541 |
| Silicon Periodic Structures and their Liquid Crystal Composites | p. 547 |
| Dependence of Luminescence Properties of Bonded Si Wafers on Surface Orientation and Twist Angle. | p. 555 |
| D-Line Emission from Small Angle Grain Boundaries in Multicrystalline Si | p. 561 |
| Determination of the Origin of Dislocation Related Luminescence from Silicon Using Regular Dislocation Networks | p. 567 |
| Structural and Luminescent Properties of Implanted Silicon Layers with Dislocation-Related Luminescence | p. 573 |
| Optimization of the Luminescence Properties of Silicon Diodes Produced by Implantation and Annealing | p. 579 |
