High-speed devices and circuits with THz applications

Title:

Series:

Devices, circuits, and systems ; 30

Publication Information:

Boca Raton : Taylor & Francis, CRC Press, 2015

Physical Description:

xv, 245 pages : illustrations ; 24 cm.

ISBN:

9781466590113

Abstract:

"This book tries to provide readers with the outlook for the future RF technology by presenting the state-of-the-art results in both new device development and circuit implementations. The book discusses key issues for the circuit operation beyond 100 GHz with respect to device physics, circuit implementations, signal generation, and some technological bottlenecks for system implementations. It presents implementation results using SiGe technologies alternative to CMOS devices"--provided by publisher

Subject Term:

Terahertz technology

Electronic circuits

Very high speed integrated circuits

Added Author:

Choi, Jung Han,

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010341250	TK7877 H54 2015	Open Access Book	Book	Searching... Unknown

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Summary

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

Discusses THz sensing and imaging devices based on nano devices and materials Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs) Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more

An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.

Author Notes

Jung Han Choi holds a BS and MS from the Sogang University, Seoul, Korea, and Dr.-Ing from the Technische Universität München, Germany. He currently works on high-data-bit-rate transmitter and receiver circuits, active/passive device modeling, and network analyzer measurement at the Fraunhofer Heinrich-Hertz Institute, Berlin, Germany. He previously served as a research scientist in the Institute for High-Frequency Engineering at the Technische Universität München, and was with the Samsung Advanced Institute of Technology and the Samsung Digital Media and Communication Research Center. In 2003, he received the EEEfCOM Innovation Prize for his contribution to the development of a high-speed receiver circuit.