Title:
Fundamentals of nanoscaled field effect transistors
Personal Author:
Publication Information:
New York : Springer, c2013
Physical Description:
xiv, 201 p. : ill. ; 24 cm.
ISBN:
9781461468219
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
---|---|---|---|---|---|
Searching... | 30000010338160 | TK7871.95 C434 2013 | Open Access Book | Book | Searching... |
On Order
Summary
Summary
Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-Îș technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.