Title:
Silicon carbide and related materials - 1999 (ICSCRM `99)
Publication Information:
Switzerland : Trans Tech Publications, 2000
ISBN:
9780878498543
General Note:
Proceedings of the International Conference on Silicon Carbide and related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1994
Subject Term:
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000004533547 | QC611.8.S5 C66 2000 v.1 | Open Access Book | Proceedings, Conference, Workshop etc. | Searching... |
Searching... | 30000004533539 | QC611.8.S5 C66 2000 v.2 | Open Access Book | Proceedings, Conference, Workshop etc. | Searching... |
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Summary
Summary
Silicon carbide is the semiconductor of choice for new applications including electric power devices, high frequency devices, high temperature devices, and radiation resistant devices. The III-Nitride compound semiconductors are well suited for optoelectronics and are promising materials for high frequency devices. This two-volume set contains written versions of papers presented at the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99), held October 10-15, 1999, at Research Triangle Park, North Carolina.
Table of Contents
| Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications | p. 3 |
| Large Diameter PVT Growth of Bulk 6H SiC Crystals | p. 9 |
| Progress in SiC Bulk Growth | p. 13 |
| Generation and Properties of Semi-Insulating SiC Substrates | p. 17 |
| Vanadium-free Semi-insulating 4H-SiC Substrates | p. 21 |
| Numerical Simulation of SiC Boule Growth by Sublimation | p. 25 |
| Global Numerical Simulation of Heat and Mass Transfer during SiC Bulk Crystal PVT Growth | p. 31 |
| An Analytical Study of the SiC Growth Process from Vapor Phase | p. 35 |
| Growth Rate Control in SiC-Physical Vapor Transport Method Through Heat Transfer Modeling and Non-Stationary Process Conditions | p. 39 |
| Experimental and Theoretical Analysis of the Thermal Conductivity of SiC Powder as Source Material for SiC Bulk Growth | p. 43 |
| Seed Surface Preparation for SiC Sublimation Growth | p. 47 |
| Single Crystal Growth of 6H-SiC on Saw-Damaged Substrate by Sublimation Method | p. 51 |
| Thermal Decomposition Cavities in Physical Vapor Transport Grown SiC | p. 55 |
| Initial Stage of Crystallization in the Growth of Silicon Carbide on Substrate with Micropipes | p. 59 |
| Nucleation of Dislocations during Physical Vapor Transport Growth of Silicon Carbide | p. 63 |
| Plastic Deformation and Residual Stresses in SiC Boules Grown by PVT | p. 67 |
| Digital X-Ray Imaging of SiC PVT Process: Analysis of Crystal Growth and Powder Source Degradation | p. 71 |
| SiC Single Crystal Growth Rate Measurement by In-Situ Observation using the Transmission X-Ray Technique | p. 75 |
| Role of Temperature Gradient in Bulk Crystal Growth of SiC | p. 79 |
| Pressure Effect in Sublimation Growth of Bulk SiC | p. 83 |
| Study of Nitrogen Incorporation in 6H-SiC Single Crystals Grown by PVT | p. 87 |
| Evaporation Behavior of SiC Powder for Single Crystal Growth-An Experimental Study on Thermodynamics and Kinetics | p. 91 |
| Considerations on the Crystal Morphology in the Sublimation Growth of SiC | p. 95 |
| Shape of SiC Bulk Single Crystal Grown by Sublimation | p. 99 |
| Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid | p. 103 |
| Top-seeded Solution Growth of Bulk SiC: Search for Fast Growth Regimes | p. 107 |
| Controlled Growth of Bulk 15R-SiC Single Crystals by the Modified Lely Method | p. 111 |
| Crystal Growth of 15R-SiC Boules by Sublimation Method | p. 115 |
| Growth of 3C SiC Single Crystals from Convection Dominated Melts | p. 119 |
| An Overview of SiC Growth | p. 125 |
| Fast SiC Epitaxial Growth in a Chimney CVD Reactor and HTCVD Crystal Growth Developments | p. 131 |
| Morphology Control for Growth of Thick Epitaxial 4H SiC Layers | p. 137 |
| Vertical Hot-Wall Type CVD for SiC Growth | p. 141 |
| LPCVD Growth and Structural Properties of 4H-SiC Epitaxial Layers | p. 145 |
| 3-D Computational Modeling of SiC Epitaxial Growth in a Hot Wall Reactor | p. 149 |
| 3-D Thermal and Flow Modeling of Hot Wall Epitaxial Chemical Vapor Deposition Reactors, Heated by Induction | p. 153 |
| The Development of Resistive Heating for the High Temperature Growth of #945;-SiC using a Vertical CVD Reactor | p. 157 |
| Initial Results on Thick 4H-SiC Epitaxial Layers Grown Using Vapor Phase Epitaxy | p. 161 |
| High Growth Rate Epitaxy of Thick 4H-SiC Layers | p. 165 |
| Competitive Growth between Deposition and Etching in 4H-SiC CVD Epitaxy Using Quasi-Hot Wall Reactor | p. 169 |
| Multi-Wafer VPE Growth and Characterization of SiC Epitaxial Layers | p. 173 |
| Homoepitaxy of Silicon Carbide Using the Single Precursor 1,3-Disilabutane | p. 177 |
| Supersonic Seeded Beam Assisted Growth of Epitaxial Silicon Carbide | p. 181 |
| 4H-SiC Substrate Orientation Effects on Hydrogen Etching and Epitaxial Growth | p. 185 |
| 4H-SiC (11-20) Epitaxial Growth | p. 189 |
| Homoepitaxial Growth of 6H SiC on Single Crystalline Spheres | p. 193 |
| Morphological Stability of 6H-SiC Epitaxial Layer on Hemispherical Substrates Prepared by Chemical Vapor Deposition | p. 197 |
| Growth of SiC on 6H-SiC {{01-14}} Substrates by Gas Source Molecular Beam Epitaxy | p. 201 |
| Molecular Beam Epitaxial Growth of Heteropolytypic and Low-Dimensional Structures of SiC | p. 205 |
| Thermodynamical Consideration of the Epitaxial Growth of SiC Polytypes | p. 209 |
| Mechanisms of SiC(111) Step Flow Growth | p. 213 |
| Mechanism of Various Defects Formation in Epitaxial Layer Prepared by Sublimation Epitaxy | p. 217 |
| Investigation of 3C-SiC Epitaxial Layers Grown by Sublimation Epitaxy | p. 221 |
| Growth of SiC and GaN on Porous Buffer Layers | p. 225 |
| 4H-SiC Layers Grown by Liquid Phase Epitaxy on 4H-SiC Off-Axis Substrates | p. 229 |
| Temperature Gradient Effect on SiC Epitaxy in Liquid Phase | p. 233 |
| Micropipe Healing in Liquid Phase Epitaxial Growth of SiC | p. 237 |
| Growth of CVD Thin Films and Thick LPE 3C SiC in a Specially Designed Reactor | p. 241 |
| Lateral Epitaxial Overgrowth and Pendeo Epitaxy of 3C-SiC on Si Substrates | p. 245 |
| Selective Epitaxial Growth of Silicon Carbide on Patterned Silicon Substrates Using Hexachlorodisilane and Propane | p. 249 |
| The APD Annihilation Mechanism of 3C-SiC Hetero-Epilayer on Si(001) Substrate | p. 253 |
| Improvement of 3C-SiC Surface Morphology on Si(100) by Adding HCl using Atmospheric CVD | p. 257 |
| Carbonization on (100) Silicon for Heteroepitaxial Growth of 3C-SiC | p. 261 |
| Growth of 3C-SiC/Si Multilayer Heterostructures by Supersonic Free Jets | p. 265 |
| Formation of High Quality SiC on Si(100) at 900°C using Monomethylsilane Gas-Source MBE | p. 269 |
| Growth and Characterization of N-Doped SiC Films from Trimethylsilane | p. 273 |
| The Effect of Ge on the Structure & Morphology of SiC Films Grown on (111) Si Substrates | p. 277 |
| In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces | p. 281 |
| Structural Investigations of the Nucleation and Growth of SiC during Rapid Thermal Conversion of (111)Si | p. 285 |
| The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si | p. 289 |
| Studies of the Initial Stages of Silicon Carbide Growth using Molecular Hydrocarbon and Methyl Radical Gas Species | p. 293 |
| Carbonization of SIMOX Substrates for Fabrication of Single-crystal SiC-on-insulator | p. 297 |
| SOL Thinning Effects on 3C-SiC on SOI* | p. 301 |
| Low Temperature Growth of 3C-SiC on Silicon for Advanced Substrate Development | p. 305 |
| Epitaxial Growth of #946;-SiC on Ion-Beam Synthesized #946;-SiC: Structural Characterization | p. 309 |
| Growth of Single Crystalline 3C-SiC and AIN on Si using Porous Si as a Compliant Seed Crystal | p. 313 |
| The Growth and Characterization of 3C-SiC/SiNx/Si Structure | p. 317 |
| The Diffusion Coefficient of Silicon in Thin SiC Layers as a Criterion for the Quality of the Grown Layers | p. 321 |
| Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si | p. 325 |
| Thin Films of #945;-Si1-xCx:H Deposited by PECVD: The r.f. Power and H2 Dilution Role | p. 329 |
| Surface Composition of 4H-SiC as a Function of Temperature | p. 335 |
| Stacking Rearrangement on SiC Surfaces: A Possible Seed for Polytype Heterostructure Growth | p. 341 |
| Atomic Structure of 6H-SiC(000-1)-(2x2)c | p. 345 |
| Ab Initio Calculation on Clean and Oxygen Covered 6H-SiC(0001) Surfaces: (#8730; 3x#8730; 3)R30° Reconstruction | p. 349 |
| Photo-Emission Electron Microscopy (PEEM) of Cleaned and Etched 6H-SiC(0001) | p. 353 |
| High Resolution Electron Energy Loss Spectroscopy of #8730; 3x#8730; 3 6H-SiC(0001) | p. 357 |
| In-Situ RHEED Analysis During #945;-SiC Homoepitaxy on (0001)Si- and (000-1)C-Faces by Gas Source Molecular Beam Epitaxy | p. 361 |
| (10-10)- and (11-20)-Surfaces in 2H-, 4H- and 6H-SiC | p. 365 |
| Theory of Structural and Electronic Properties of Cubic SiC Surfaces | p. 369 |
| Characterization of Anisotropic Step-bunching on as-grown SiC Surfaces | p. 375 |
| Observation of Macrostep Formation on the (0001) Facet of Bulk SiC Crystals | p. 379 |
| Silicate Monolayers on the Hexagonal Surfaces of 4H- and 6H-SiC | p. 383 |
| Electronic and Atomic Structure of an Ordered Silicate Adlayer on Hexagonal SiC | p. 387 |
| Photoemission Study of the Silicate Adlayer Reconstruction on Si-terminated 6H-SiC (0001) | p. 391 |
| Initial Oxidation of the Si-terminated 6H-SiC(0001) 3x3 Surface | p. 395 |
| XPS Analysis of SiO2/SiC Interface Annealed in Nitric Oxide Ambient | p. 399 |
| Surface Studies on Thermal Oxidation on 4H-SiC Epilayer | p. 403 |
| Quantified Conditions for Reduction of ESO Contamination During SiC Metalization | p. 407 |
| Thermal Annealing Effect on TiN/Ti Layers on 4H-SiC: Metal-Semiconductor Interface Characterization | p. 411 |
| A Surface/Interfacial Structural Model of Pd Ultra-thin Film on SiC at Elevated Temperatures | p. 415 |
| Study of a Clean Surface of #945; - SiC and its Metallization Process by Cu, Au and Ni using STM and Electron/Photon Spectroscopies | p. 419 |
| Monolayer Growth Modes of Re and Nb on the Polar Faces of 4H-SiC | p. 423 |
| Group-#921;#921;#921; Adsorption and Bond Stacking on SiC(111) Surfaces | p. 427 |
| Characterization of SiC using Synchrotron White Beam X-ray Topography | p. 431 |
| Growth of Low Micropipe Density SiC Wafers | p. 437 |
| Investigation of the Origin of Micropipe Defect | p. 441 |
| Analysis on the Formation and Elimination of Filamentary and Planar Voids in Silicon Carbide Bulk Crystals | p. 445 |
| Origin of the Internal Stress Around the Micropipe of 6H-SiC Single Crystal | p. 449 |
| Structural Investigation on the Nature of Surface Defects Present in Silicon Carbide Wafers Containing Varying Amount of Micropipes | p. 453 |
| In-situ Observation of SiC Bulk Single Crystal Growth by X-Ray Topography | p. 457 |
| X-ray Topographic Study of SiC Crystal at High Temperature | p. 461 |
| Synchrotron White Beam Topography Studies of 2H SiC Crystals | p. 465 |
| Synchrotron White Beam X-ray Topography and Atomic Force Microscopy Studies of a 540R-SiC Lely Platelet | p. 469 |
| X-ray Characterization of 3 inch Diameter 4H and 6H-SiC Experimental Wafers | p. 473 |
| Origin of Threading Dislocation Arrays in SiC Boules Grown by PVT | p. 477 |
| Structural Characterization of Silicon Carbide Etched by Using a Combination of Ion Implantation and Wet Chemical Etching | p. 481 |
| Polytype and Defect Control of Two Inch Diameter Bulk SiC | p. 485 |
| Correlation of EBIC and SWBXT Imaged Defects and Epilayer Growth Pits in 6H-SiC Schottky Diodes | p. 489 |
| Investigation of Low Angle Grain Boundaries in Modified-Lely SiC Crystals by High Resolution X-ray Diffractometry | p. 493 |
| Structural, Electrical and Optical Properties of Bulk 4H and 6H p-Type SiC | p. 497 |
| High Order X-ray Diffraction and Internal Atomic Layer Roughness of Epitaxial and Bulk SiC Materials | p. 501 |
| 4H-SiC CVD Epitaxial Layers with Improved Structural Quality Grown on SiC Wafers with Reduced Micropipe Density | p. 505 |
| Structural and Optical Studies of Low-Doped n-6H SiC Layers Grown by Vacuum Sublimation | p. 509 |
| Stacking Fault Energy of 6H-SiC and 4H-SiC Single Crystals | p. 513 |
| Deformation Tests on 4H-SiC Single Crystals between 900°C and 1360°C and the Microstructure of the Deformed Samples | p. 517 |
| Void Shapes in the Si (111) Substrate at the Heteroepitaxial Thin Film / Si Interface | p. 521 |
| Defect Characterization in 3C-SiC Films Grown on Thin and Thick Silicon Top Layers of SIMOX | p. 525 |
| Structural Characteristics of 3C-SiC Films Epitaxially Grown on the Si/Si3N4/SiO2 System | p. 529 |
| Illusion of New Polytypes | p. 533 |
| Microstructural, Optical and Electronic Investigation of Anodized 4H-SiC | p. 537 |
| Characterization of Polycrystalline SiC Grown on SiO2 and Si3N4 by APCVD for MEMS Applications | p. 541 |
| Theory of Below Gap Absorption Bands in n-Type SiC Polytypes; Or, how SiC got its Colors | p. 545 |
| Absorption Bands Associated with Conduction Bands and Impurity States in 4H and 6H SiC | p. 551 |
| Determination of the Polarization Dependence of the Free-Carrier-Absorption in 4H-SiC at High-Level Photoinjection | p. 555 |
| Bandstructure and Transport Properties of 4H- and 6H-SiC: Optically Detected Cyclotron Resonance Investigations | p. 559 |
| Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance | p. 563 |
| Differential Absorption Measurement of Valence Band Splittings in 4H SiC | p. 567 |
| Anisotropic Dielectric Function Properties of Semi-insulating 4H-SiC Determined from Spectroscopic Ellipsometry | p. 571 |
| Optical Characterization of 4H-SiC by Variable Angle of Incidence Spectroscopic Ellipsometry | p. 575 |
| Isotope Effects on the Raman Spectrum of SiC | p. 579 |
| Disappearance of the LO-Phonon Line in the UV-Raman Spectrum of 6H-SiC | p. 583 |
| Selectively Resonant Raman Spectra of Folded Phonon Modes in SiC | p. 587 |
| Raman Spectral Profiles of Folded Longitudinal Modes in SiC under Off-resonant Condition | p. 591 |
| Raman Spectroscopy on Biaxially Strained Epitaxial Layers of 3C-SiC on Si | p. 595 |
| Characterization of 3C-SiC/SOI Deposited with HMDS | p. 599 |
| Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe | p. 603 |
| Carrier Density Evaluation in P-Type SiC by Raman Scattering | p. 607 |
| Shallow Nitrogen Donor States in 4H-SiC Investigated by Photothermal Ionization Spectroscopy | p. 611 |
| Characterization of Silicon Carbide using Raman Spectroscopy | p. 615 |
| Photoluminescence Study of CVD Layers Highly Doped with Nitrogen | p. 619 |
| Low Temperature Photoluminescence of 13C Enriched SiC-Crystals Grown by the Modified Lely Method | p. 623 |
| Sub-#956;m Scale Photoluminescence Image of SiC and GaN at a Low Temperature | p. 627 |
| Vanadium-related Center in 4H Silicon Carbide | p. 631 |
| Spectroscopic Investigation of Vanadium Acceptor Level in 4H and 6H-SiC | p. 635 |
| Photoluminescence and DLTS Measurements of 15MeV Erbium Implanted 6H and 4H SiC | p. 639 |
| Electronic States of Vacancies in 3C- and 4H-SiC | p. 643 |
| Pseudo-Donors in SiC | p. 647 |
| Metastability of a Hydrogen-related Defect in 6H-SiC | p. 651 |
| Optical Characterization of Lattice Damage and Recovery in Ion-Implanted and Pulsed Excimer Laser Irradiated 4H-SiC | p. 655 |
| Microscopic Probing of Raman Scattering and Photoluminescence on C-Al Ion Co-Implanted 6H-SiC | p. 659 |
| Confocal Raman Microprobe of Lattice Damage in N+ Implanted 6H-SiC | p. 663 |
| Ion Beam Induced Change in the Linear Optical Properties of SiC | p. 667 |
| Free Carrier Diffusion Measurements in Epitaxial 4H-SiC with a Fourier Transient Grating Technique: Injection Dependence | p. 671 |
| Time-Resolved Photoluminescence Study of Bound and Free Excitons in 4H SiC | p. 675 |
| Optical Lifetime Measurements in 4H SiC | p. 679 |
| Optical Characterization of 4H-SiC p+n-n+ Structures Applying Time- and Spectrally Resolved Emission Microscopy | p. 683 |
| Electroluminescence From Implanted and Epitaxially Grown pn-Diodes | p. 687 |
| Avalanche Breakdown Electroluminescence in Silicon Carbide Light Emitting Diodes | p. 691 |
| Photon Emission Mechanisms in 6H and 4H-SiC MOSFETs | p. 695 |
| Non-Contact Photovoltage Measurements in SiC | p. 699 |
| Ionization Energies and Electron Mobilities in Phosphorus- and Nitrogen-Implanted 4H-Silicon Carbide | p. 703 |
| MicroRaman and Hall Effect Study of n-Type Bulk 4H-SiC | p. 707 |
| Electrical Properties of 3C-SiC Grown on Si by CVD Method using Si2(CH3)6 | p. 711 |
| Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI) | p. 715 |
| Theoretical Treatments of Band Edges in SiC Polytypes at High Carrier Concentrations | p. 719 |
| A Theoretical Study of Electron Drift Mobility Anisotropy in n-Type 4H-and 6H-SiC | p. 725 |
| Theoretical Calculation of the Electron Hall Mobility in n-Type 4H- and 6H-SiC | p. 729 |
| Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation | p. 733 |
| Hall Mobility of the Electron Inversion Layer in 6H-SiC MOSFETs | p. 737 |
| Application and Improvement of the Spreading Resistance Method for p-Type 6H-SiC | p. 741 |
| Theoretical Study of Carrier Freeze-Out Effects on Admittance Spectroscopy and Frequency-Dependent C-V Measurements in SiC | p. 745 |
| On the Existence of Deep Levels of the Acceptors Ga and In and of the Potential Double Acceptors Zn and Cd in SiC | p. 749 |
| Correlation between DLTS and Photoluminescence in He-implanted 6H-SiC | p. 753 |
| Observation of Deep Levels in SiC by Optical-Isothermal Capacitance Transient Spectroscopy | p. 757 |
| Improved Measurements of High-Field Drift Velocity in Silicon Carbide | p. 761 |
| A Full Band Monte Carlo Study of High Field Carrier Transport in 4H-SiC | p. 765 |
| Electron Saturated Vertical Velocities in Silicon Carbide Polytypes | p. 769 |
| High Temperature Effects on the Terahertz Mobility of Hot Electrons in 3C-SiC and 6H-SiC | p. 773 |
| Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes | p. 777 |
| Measurement of Charge Carrier Lifetime Temperature-Dependence in 4H-SiC Power Diodes | p. 781 |
| Donors and Acceptors in SiC-Studies with EPR and ENDOR | p. 785 |
| ESR Spectrum of Nitrogen in 6H SiC in the Ground and Excited States | p. 791 |
| Dopant-related Complexes in SiC | p. 795 |
| The Spatial Distribution of the Electronic Wave Function of the Shallow Boron Acceptor in 4H- and 6H-SiC | p. 799 |
| The Electronic Structure of the Be Acceptor Centers in 6H-SiC | p. 805 |
| Electron Paramagnetic Resonance of the Scandium Acceptor in 4H and 6H Silicon Carbide | p. 809 |
| ESR Study of Delamination in H+ Implanted Silicon Carbide | p. 813 |
| Vacancies and their Complexes with H in SiC | p. 817 |
| The Carbon Vacancy Pair in 4H and 6H SiC | p. 821 |
| Electron Spin Resonance in Neutron-Irradiated n-type 6H-Silicon Carbide | p. 825 |
| Physics of SiC Processing | p. 831 |
| Polishing and Surface Characterization of SiC Substrates | p. 837 |
| Comparison of Mechanical and Chemomechanical Polished SiC Wafers Using Photon Backscattering | p. 841 |
| Damage-Free Surface Modification of Hexagonal Silicon Carbide Wafers | p. 845 |
| Nuclear Transmutation Doping of Phosphorus into 6H-SiC | p. 849 |
| Radiation Defects and Doping of SiC with Phosphorous by Nuclear Transmutation Doping (NTD) | p. 853 |
| Relationship between Donor Activation and Defect Annealing in 6H-SiC Hot-Implanted with Phosphorus Ions | p. 857 |
| Hot-Implantation of Phosphorus Ions into 4H-SiC | p. 861 |
| Electrical Characteristics and Surface Morphology for Arsenic Ion-Implanted 4H-SiC at High Temperature | p. 865 |
| Damage Evolution in Al-implanted 4H SiC | p. 869 |
| Excimer Laser Annealing of Ion-Implanted 6H-Silicon Carbide | p. 873 |
| High Concentration Doping of 6H-SiC by Ion Implantation: Flash versus Furnace Annealing | p. 877 |
| Consequences of High-Dose, High Temperature Al+ Implantation in 6H-SiC | p. 881 |
| Al and Al/C High Dose Implantation in 4H-SiC | p. 885 |
| Channeled Implants in 6H Silicon Carbide | p. 889 |
| Damage Reduction in Channeled Ion Implanted 6H-SiC | p. 893 |
| Ion Beam Induced Nanocrystallization of SiC | p. 897 |
| High Temperature Implant Activation in 4H and 6H-SiC in a Silane Ambient to Reduce Step Bunching | p. 901 |
| Characterization of Implantation Layer in (1-100) Oriented 4H- and 6H- SiC | p. 905 |
| Electrical and Structural Properties of Al and B Implanted 4H-SiC | p. 909 |
| Secondary Defect Distribution in High Energy Ion Implanted 4H-SiC | p. 913 |
| Coimplantation Effects of (C and Si)/Ga in 6H-SiC | p. 917 |
| Improved Annealing Process for 6H-SiC p+-n Junction Creation by Al Implantation | p. 921 |
| Characteristics of n-p Junction Diodes made by Double-Implantations into SiC | p. 925 |
| Reactivation of Hydrogen-Passivated Aluminum Acceptors in p-type SiC | p. 929 |
| Formation of Passivated Layers in P-Type SiC by Low Energy Ion Implantation of Hydrogen | p. 933 |
| Metal-contact Enhanced Incorporation of Deuterium in 4H- and 6H-SiC | p. 937 |
| Transient-Enhanced Diffusion of Boron in SiC | p. 941 |
| Selective Doping of 6H-SiC by Diffusion of Boron | p. 945 |
| Ab Initio Study of Intrinsic Point defects and Dopant-defect Complexes in SiC: Application to Boron Diffusion | p. 949 |
| Beryllium Implantation Doping of Silicon Carbide | p. 953 |
| Ion-Channeling Studies of Interfaces and Defect Properties in Silicon Carbide | p. 957 |
| Formation of Precipitates in 6H-SiC after Oxygen Implantation and Subsequent Annealing | p. 961 |
| Microstructural Evolution of Radiation-Induced Defects in Semi-Insulating SiC During Isochronal Annealing | p. 965 |
| Vacancy-Type Defects in Proton-Irradiated 6H- and 4H-SiC: A Systematic Study with Positron Annihilation Techniques | p. 969 |
| Deep Centres Appearing in 6H and 4H SiC after Proton Irradiation | p. 973 |
| Radiation-induced Conductivity and Simultaneous Photoconductivity Suppression in 6H-SiC under 17 MeV Proton Irradiation | p. 977 |
| Study of Contact Formation by High Temperature Deposition of Ni on SiC | p. 981 |
| Ohmic Contact Formation on n-Type 6H-SiC using NiSi2 | p. 985 |
| Lowering the Annealing Temperature of Ni/SiC for Ohmic Contacts under N2 Gas, and Application to a UV Sensor | p. 989 |
| Adhesion and Microstructure of Ni Contacts to 3C-SiC | p. 993 |
| Low Resistance Ohmic Contacts to n-SiC Using Niobium | p. 997 |
| A Comparison of Single- and Multi-Layer Ohmic Contacts Based on Tantalum Carbide on n-Type and Osmium on p-Type Silicon Carbide at Elevated Temperatures | p. 1001 |
| Improved Ohmic Contacts to 6H-SiC by Pulsed Laser Processing | p. 1005 |
| Al/Si Ohmic Contacts to p-Type 4H-SiC for Power Devices | p. 1009 |
| Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC | p. 1013 |
| Structural and Morphological Characterization of Al/Ti-Based Ohmic Contacts on p-Type 4H-SiC Annealed Under Various Conditions | p. 1017 |
| Thermal Stability in Vacuum and in Air of Al/Ni/W Based Ohmic Contacts to p-Type SiC | p. 1021 |
| A UHV Study of Ni/SiC Schottky Barrier and Ohmic Contact Formation | p. 1025 |
| Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC | p. 1029 |
| Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation | p. 1033 |
| Pre-Growth Treatment of 4H-SiC Substrates by Hydrogen Etching at Low Pressure | p. 1037 |
| SiC In-Situ Pre-Growth Etching: A Thermodynamic Study | p. 1041 |
| The Effect of In Situ Surface Treatment on the Growth of 3C-SiC Thin Films on 6H-SiC Substrate - An X-ray Triple Crystal Diffractometry and Synchrotron X-ray Topography Study | p. 1045 |
| Dry Etching and Metallization Schemes in a GaN/SiC Heterojunction Device Process | p. 1049 |
| Demonstration of Deep (80#956;m) RIE Etching of SiC for MEMS and MMIC Applications | p. 1053 |
| Reactive Ion Etching in CF4 / O2 Gas Mixtures for Fabricating SiC Devices | p. 1057 |
| Electrochemical C-V Profiling of P-type 6H-SiC | p. 1061 |
| Electrically Active Traps at the 4H-SiC/SiO2 Interface Responsible for the Limitation of the Channel Mobility | p. 1065 |
| Anomalously High Density of Interface States Near the Conduction Band in SiO2/4H-SiC MOS Devices | p. 1069 |
| Effect of Post-oxidation-annealing in Hydrogen on SiO2/4H-SiC Interface | p. 1073 |
| Process Dependence of Inversion Layer Mobility in 4H-SiC Devices | p. 1077 |
| Controlled Thermal Oxidation of Sacrificial Silicon on 4H-SiC Epilayer | p. 1081 |
| Ozone Treament of SiC for Improved Performance of Gas Sensitive Schottky Diodes | p. 1085 |
| Reliability and Degradation of Metal-Oxide-Semiconductor Capacitors on 4H- and 6H-Silicon Carbide | p. 1089 |
| SiC Devices with ONO Stacked Dielectrics | p. 1093 |
| The Effect of Si:C Source Ratio on SiO2/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC | p. 1097 |
| Channel Doped SiC-MOSFETs | p. 1101 |
| Anisotropy of Inversion Channel Mobility in 4H- and 6H-SiC MOSFETs on (11-20) Face | p. 1105 |
| MOSFET Performance of 4H-, 6H-, and 15R-SiC Processed by Dry and Wet Oxidation | p. 1109 |
| Interface Trap Profiles Near the Band Edges in 6H-SiC MOSFETs | p. 1113 |
| Characterization of SiC MOS Structures using Conductance Spectroscopy and Capacitance Voltage Analysis | p. 1117 |
| Mobility in 6H-SiC n-Channel MOSFETs | p. 1121 |
| Effects of Oxidation Conditions on the Concentration of Carbon Dangling Bonds in Oxidized 6H-SiC | p. 1125 |
| Effects of Steam Annealing on Electrical Characteristics of 3C-SiC Metal-Oxide-Semiconductor Structures | p. 1129 |
| Atomic-Scale Engineering of the SiC-SiO2 Interface | p. 1133 |
| Comparison of High-Temperature Electrcial Characterizations of Pulsed-Laser Deposited AIN on 6H- and 4H-SiC from 25 to 450°C | p. 1137 |
| Molding-based Thin Film Patterning Techniques for SiC Surface Micromachining | p. 1141 |
| Bulk Micromachining of Polycrystalline SiC Using Si Molds Fabricated by Deep Reactive Ion Etching | p. 1145 |
| Preliminary Investigation of SiC on Silicon for Biomedical Applications | p. 1149 |
| SiC and GaN High-Voltage Power Switching Devices | p. 1155 |
| Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices | p. 1161 |
| Performance and Reliability Issues of SiC-Schottky Diodes | p. 1167 |
| Designing, Physical Simulation and Fabrication of High-Voltage (3.85 kV) 4H-SiC Schottky Rectifiers Processed on Hot-Wall and Chimney CVD Films | p. 1171 |
| Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-voltage 4H-SiC Schottky Diodes | p. 1175 |
| A 2.8kV, Forward Drop JBS Diode with Low Leakage | p. 1179 |
| 3.6 kV 4H-SiC JBS Diodes with Low RonS | p. 1183 |
| Fabrication and Testing of 1,000V-60A 4H-SiC MPS Diodes in an Inductive Half-Bridge Circuit | p. 1187 |
| Large Contact Ti/4H-SiC Schottky Diodes Fabricated Using Standard Silicon Processing Techniques | p. 1191 |
| Optical Beam Induced Current Analysis of High-Voltage 4H-SiC Schottky Rectifiers | p. 1195 |
| Effect of Plasma Etching and Sacrificial Oxidation on 4H-SiC Schottky Barrier Diodes | p. 1199 |
| 4H-SiC Device Scaling Development on Repaired Micropipe Substrates | p. 1203 |
| Design and Characterization of a SiC Schottky Diode Mixer | p. 1207 |
| Breakdown Voltage Improvement of 4H-SiC Schottky Diodes by a Thin Surface Implant | p. 1211 |
| DC and Pulse Characterizations of (600V) 6H-SiC Schottky Diode Breakdown | p. 1215 |
| 6H-SiC Schottky Barrier Diodes with Nearly Ideal Breakdown Voltage | p. 1219 |
| Lateral Current Spreading in SiC Schottky Diodes using Field-Plate Edge Termination | p. 1223 |
| Characterization of Schottky Contact on p-type 6H-SiC | p. 1227 |
| Computer Simulation of P-type SiC Schottky Diode using ATLAS | p. 1231 |
| Schottky Barrier Characteristics of 3C-SiC Epilayers Grown by Low Pressure Chemical Vapor Deposition | p. 1235 |
| Characterization of Au Schottky Contacts on p-Type 3C-SiC Gown by Low Pressure Chemical Vapor Deposition | p. 1239 |
| Static and Dynamic Characteristics of 4H-SiC JFETs Designed for Different Blocking Categories | p. 1243 |
| Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer | p. 1247 |
| Surface Induced Instabilities in 4H-SiC Microwave MESFETs | p. 1251 |
| Characterization of SiC MESFETs on Conducting Substrates | p. 1255 |
| Fabrication, Characterization, and Modeling of SiC MESFETs | p. 1259 |
| Physical Simulations on the Operation of 4H-SiC Microwave Power Transistors | p. 1263 |
| Properties of Transmission Lines on Various SiC Substrates | p. 1267 |
| High Temperature, High Current, 4H-SiC Accu-DMOSFET | p. 1271 |
| 4H-SiC Self-Aligned Implant-Diffused Structure for Power DMOSFETs | p. 1275 |
| Nitrogen vs. Phophorus as Implant Species for High-Voltage Lateral RESURF MOSFETs on 4H-SiC | p. 1279 |
| Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures | p. 1283 |
| Accumulation-Mode SiC Power MOSFET Design Issues | p. 1287 |
| Progress Towards a Manufacturable SiC Mixed Analog-Digital Integrated Circuit Technology+ | p. 1291 |
| Rugged Power MOSFETs in 6H-SiC with Blocking Capability up to 1800V | p. 1295 |
| Influence of Post-Oxidation Annealing on Electrical Characteristics in 6H-SiC MOSFETs | p. 1299 |
| Effect of Boron Implantation on 6H-SiC N-MOSFET Interface Properties | p. 1303 |
| Investigation of Lateral RESURF, 6H-SiC MOSFETs | p. 1307 |
| Highly Durable SiC nMISFET's at 450°C | p. 1311 |
| SiC MISFETs with MBE-grown AlN Gate Dielectric | p. 1315 |
| Steady-State and Transient Forward Current-Voltage Characteristics of 5.5 kV 4H-Silicon Carbide Diodes at High and Superhigh Current Densities | p. 1319 |
| Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes | p. 1323 |
| Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes | p. 1327 |
| Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers | p. 1331 |
| Dynamic and Steady-State Description of Incomplete Ionization in 4H-SiC Power Diodes under Turn-Off | p. 1335 |
| Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination | p. 1339 |
| Transient Characterization of SiC P-N Diode | p. 1343 |
| Formation of Deep pn Junctions by MeV Al- and B-ion Implantations into 4H-SiC and Reverse Characteristics | p. 1347 |
| Defect Modeling and Simulation of 4-H SiC P-N Diode | p. 1351 |
| 6H-SiC Diodes with Cellular Structure to Avoid Micropipe Effects | p. 1355 |
| A Closed-form Analytical Solution of 6H-SiC Punch-through Junction Breakdown Voltages | p. 1359 |
| Study of the Breakdown Voltage of Protected or Non-Protected 6H-SiC Bipolar Diodes by OBIC Characterisation | p. 1363 |
| Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers | p. 1367 |
| 6.2KV 4H-SiC pin Diode with Low Forward Voltage Drop | p. 1371 |
| Theoretical and Experimental Study of 4H-SiC Junction Edge Termination | p. 1375 |
| Monte Carlo Simulation of 4H-SiC IMPATT Diodes | p. 1379 |
| Demonstration of High Performance Visible-blind 4H-SiC Avalanche Photodiodes | p. 1383 |
| 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development | p. 1387 |
| Factors Influencing the Design and Performance of 4H-SiC GTO Thyristors | p. 1391 |
| 4H-SiC Gate Turn-Off Thyristor Designs for Very High Power Control | p. 1395 |
| Fabrication and Characterization of 4H-SiC GTOs and Diodes | p. 1399 |
| 100 kHz Operation of SiC Junction Controlled Thyristor (JCT) Switches used in an All-SiC PWM Inverter | p. 1403 |
| SiC-Power Rectifiers | p. 1407 |
| Comparison of 5 kV 4H-SiC N-Channel and P-Channel IGBTs | p. 1411 |
| Design and Simulations of 5000V MOS-Gated Bipolar Transistor (MGT) on 4H-SiC | p. 1415 |
| TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors | p. 1419 |
| Operation of a 2500V 150A Si-IGBT / SiC Diode Module | p. 1423 |
| High-Power P-Channel UMOS IGBT's in 6H-SiC for High Temperature Operation | p. 1427 |
| High Temperature 4H-SiC FET for Gas Sensing Applications | p. 1431 |
| High Temperature Gas Sensors Based on Catalytic Metal Field Effect Transistors | p. 1435 |
| SiC-Based Gas Sensor Development | p. 1439 |
| Fabrication of SiC Hydrogen Sensor by Pd-Implantation | p. 1443 |
| Epitaxial 6H-SiC Layers as Detectors of Nuclear Particles | p. 1447 |
| GaN Quantum Dots on Sapphire and Si Substrates | p. 1453 |
| Achievement of MBE-Grown GaN Heteroepitaxial Layer with (0001) Ga-Polarity and Improved Quality by In Exposure | p. 1459 |
| Crack-Free, Single-Crystal GaN Grown on 100 mm Diameter Silicon | p. 1463 |
| 3C-SiC Pseudosubstrates for the Growth of Cubic GaN | p. 1467 |
| Lateral- and Pendeo-Epitaxial Growth and Defect Reduction in GaN Thin Films | p. 1471 |
| Pendeoepitaxy of GaN and InGaN LEDs on SiC | p. 1477 |
| Comparison of Different Epitaxial Lateral Overgrowth GaN Structures using SiO2 and Tungsten Mask by Cathodoluminescence Microscopy and Micro-Raman Spectroscopy | p. 1483 |
| High Quality GaN on Si(111) using (AlN/GaN)x Superlattice and Maskless ELO | p. 1487 |
| Pendeo-EpitaxyTM Process for Aluminum Gallium Nitride Thin Films on Silicon Carbide Substrates via Metalorganic Chemical Vapor Deposition | p. 1491 |
| Reduction of Defects on GaN and AlGaN by In-Doping in Metalorganic Vapor Phase Epitaxy | p. 1495 |
| Comparison of AlGaN and GaN Grown on Various Substrates: Step Flow Growth on LiGaO2 at Low Growth Temperature | p. 1499 |
| Pulsed Laser Deposition: A Novel Growth Technique for Wide-Bandgap Semiconductor Research | p. 1503 |
| Investigation into the Film Growth of AlN on SiC by Low Pressure Chemical Vapour Deposition | p. 1507 |
| AlN Epitaxial Films Grown by ECR Plasma Assisted Metalorganic Chemical Vapor Deposition under Controlled Plasma Condition in Afterglow Region | p. 1511 |
| Silicon Carbide Substrates for Epitaxial Growth of Aluminium Nitride by Chloride-Transport Process | p. 1515 |
| Low-Energy-Ion-Assisted Reactive Sputter Deposition of Epitaxial AlN Thin Films on 6H-SiC | p. 1519 |
| Pulsed Laser Deposition of Oriented Aluminum Nitride Thin Films and Their Application | p. 1523 |
| State of Art of c-BN Growth Physics: Substrate Effect | p. 1527 |
| Adsorption and Desorption of Hydrogen on Ga-rich GaN(0001) | p. 1533 |
| Extremely Efficient Electron Stimulated Desorption of Hydrogen from GaN(0001) | p. 1537 |
| The Reaction of Oxygen with GaN(0001) | p. 1541 |
| Observation of Cubic GaN/AlN Heterointerface Formation by RHEED in Plasma-Assisted Molecular Beam Epitaxy | p. 1545 |
| Analysis of Dislocation Densities and Nanopipe Formation in MBE-grown AlN-Layers | p. 1549 |
| Correlation between Optical and Structural Properties of Thick GaN Films Grown by Direct Reaction of Ga and NH3 | p. 1553 |
| Improved Electron Emission from Defective Diamond Film Deposited by CVD Method | p. 1557 |
| Theory of Impurities and Defects in III-Nitrides: Vacancies in GaN and Related Materials | p. 1561 |
| Nonabrupt Interface Related Exciton Energy Shifts in GaN/AlxGa1-xN Quantum Dots | p. 1567 |
| Radiative Recombination in InGaN/GaN Multiple Quantum Wells | p. 1571 |
| Impact of Epitaxial Lateral Overgrowth on the Recombination Dynamics in GaN Determined by Time Resolved Micro-Photoluminescence Spectroscopy | p. 1575 |
| Structured Ultrafast Carrier Drift Velocity in Photoexcited Zincblende GaN | p. 1579 |
| Characterization of Thick GaN Layers Using Guided Optical Waves | p. 1583 |
| Polarization Memory in Band Edge Luminescence from Free Standing Gallium Nitride | p. 1587 |
| Enhancement of UV-Sensitivity in GaN / GaAs Heterostructures by Si-Doping | p. 1591 |
| Resonant Raman Scattering and the Emission Process in Zincblende-InxGa1-xN | p. 1595 |
| A Comparison of Aluminum Nitride Freely Nucleated and Seeded on 6H-Silicon Carbide | p. 1599 |
| Low Frequency Noise in n-GaN with High Electron Mobility | p. 1603 |
| Role of Alloy Fluctuations in InGaN-Based LEDs and Laser Diodes | p. 1609 |
| Influence of Annealing Conditions on Dopant Activation of Si+ and Mg+ Implanted GaN | p. 1615 |
| Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing | p. 1619 |
| Time-Resolved Photoluminescence Measurements of InGaN Light-Emitting Diodes | p. 1623 |
| GaN PIN Photodiodes Grown on Sapphire and SiC Substrates | p. 1627 |
| Temperature Dependent Performance of GaN Schottky Diode Rectifiers | p. 1631 |
| Monte Carlo Simulation of Gunn Effect and Microwave Power Generation at 240 GHz in n+-n--n-n+ GaN Structures | p. 1635 |
| DC and Large-Signal RF Performance of Recessed Gate GaN MESFETs Fabricated by the Photoelectrochemical Etching Process | p. 1639 |
| Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide | p. 1643 |
| Characterization of AlGaN/GaN HEMT Devices Grown by MBE | p. 1647 |
| A Comparative Study of n-p GaN/SiC Heterojunction and p-n 6h-SiC Homojunction Diodes | p. 1651 |
| Electric Characteristics of 6H-SiC/GaN Isotype n-n Heterojunctions | p. 1655 |
