Cover image for Crystal growth technology : from fundamentals and simulation to large-scale production
Title:
Crystal growth technology : from fundamentals and simulation to large-scale production
Publication Information:
Weinheim : Wiley-VCH, 2008
ISBN:
9783527317622

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30000010160678 QD921 C79 2008 Open Access Book Proceedings, Conference, Workshop etc.
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Summary

Summary

In this book top experts treat general thermodynamic aspects of crystal fabrication; numerical simulation of industrial growth processes; commercial production of bulk silicon, compound semiconductors, scintillation and oxide crystals; X-ray characterization; and crystal machining. Also, the role of crystal technology for renewable energy and for saving energy is discussed. It will be useful for scientists and engineers involved in crystal and epilayer fabrication as well as for teachers and graduate students in material science, chemical and metallurgical engineering, and micro- and optoelectronics, including nanotechnology.


Author Notes

Professor Hans J. Scheel started the Scheel Consulting company in 2001 after retiring from the Swiss Federal Institute of Technology. Starting out with a chemical background, he has more than 40 years of experience with crystal growth and epitaxy in university as well as industry. For his achievements in bulk crystal growth and epitaxy technologies, he received awards from IBM and from Swiss, British, Korean Crystal Growth Associations, was elected member of the Russian Academy of Engineering Sciences, and received his D.Sc. from Tohoku University, Japan. He is co-author and editor of 6 books, author of more than 100 publications and patents, has organized international workshops on crystal technology and has been visiting professor at Osaka and Tohoku Universities, Japan, as well as Shandong University, China.

Dr. Peter Capper is a Materials Team Leader at SELEX Sensors and Airborne Systems Infrared Ltd (formerly BAE Systems), and has over 30 years of experience in the infrared material Cadmium Mercury Telluride (CMT). He holds the patent for the application of the accelerated crucible rotation technique to CMT growth and is recognised as a world authority on CMT. He has written and edited 6 books on electronic materials and devices. He has served on several International Advisory boards to conferences, acted as co-Chair at an E-MRS Symposium and a SPIE Symposium and has edited several conference proceedings for J. Crystal Growth and J. Materials Science. He is also currently on the editorial board of the Journal of Materials Science: Materials in Electronics.


Table of Contents

Preface
List of Contributors
Part I General Aspects of crystal Growth Technology
1 Phase Diagrams for Crystal GrowthManfred Muhlberg
2 Fundamentals of Equilibrium Thermodynamics of Crystal GrowthKlaus Jacobs
3 Thermodynamics, Origin, and Control of DefectsPeter Rudolph
4 Thermophysical Properties of Molten SiliconTaketoshi Hibiya and Hiroyuki Fukuyama and Takao Tsukada and Masahito Watanabe
Part IISimulation of Industrial Growth Processes
5 Yield Improvement and defect Control in Bridgman-Type Crystal Growth with the Aid of Thermal ModelingJochen Friedrich
6 Modeling of Czochralski Growth of Large Silicon CrystalsVladimir Kalaev and Yuri Makarov and Alexander Zhmakin
7 Global Analysis of Effects of Magnetic Field Configuration on Melt/Crystal Interface Shape and Melt Flow in a Cz-Si Crystal GrowthKoichi Kakimoto and Liun Liu
8 Modeling of Semitransparent Bulk Crystal GrowthVladimir Kalaev and Yuri Makarov and Valentin Yuferev and Alexander Zhmakin
Part IIICompound Semiconductors
9 Recent Progress in GaAs Growth Technologies at FREIBERGERStefan Eichler and Frank Borner and Thomas Bunger and Manfred Jurisch and Andreas Kohler and Ullrich Kretzer and Max Scheffer-Czygan and Berndt Weinert and Tilo Flade
10 Interface Stability and Its Impact on Control DynamicsFrank J. Bruni
11 Use of Forced Mixing via the Accelerated Crucible Rotation Technique (ACRT) in Bridgman Growth of Cadmium Mercury Telluride (CMT)Peter Capper
12 Crystal-Growth Technology for Ternary III-V Semiconductor Production by Vertical Bridgman and Vertical Gradient Freezing Methods with Accelerated Crucible Rotation TechniquePartha S. Dutta
13 X-Ray Diffraction Imaging of Industrial CrystalsKeith Bowen and David Jacqus and Petra Feichtinger
Part IV Scintillator Crystals
14 Continuous Growth of Large Halide Scintillation CrystalsAlexander Gektin and Valentine Goriletskiy and Borys Zaslavskiy
Part V Oxides
15 Phase Equilibria and Growth of Langasite-Type CrystalsSatoshi Uda and Shou-Qi Wang and Hiromitsu Kimura and Xinming Huang
16 Flame-Fusion (Verneuil) Growth of OxidesHans J. Scheel and Leonid Lytvynov
Part VI Crystal Growth for Sustaining Energy
17 Saving Energy and Renewable Energy Through Crystal TechnologyHans J. Scheel
Part VII Crystal Machining
18 Crystal Sawing TechnologyHans J. Moller
19 Plasma Chemical Vaporization Machining and Elastic Emission MachiningYasuhisa Sano and Kazuya Yamamura and Hidekazu Mimura and Kazuto Yamauchi and Yuzo Mori
Index