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Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000010070478 | QC174.9 J32 2004 | Open Access Book | Book | Searching... |
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Summary
Summary
The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on the growth of thin films and bulk crystals, which are the two main pillars of modern device and semiconductor technology. All the presented phenomena are tied back to the basic thermodynamic properties of the materials and to the underlying physical processes for clarity.
Table of Contents
| Preface |
| 1 Introduction |
| 1.1 Arrhenius Plot |
| 1.2 The Relationship between Kinetics and Thermodynamics |
| 1.3 The Boltzmann Distribution |
| 1.4 Kinetic Theory of Gases |
| 1.5 Collisions |
| 2 Diffusion in Fluids |
| 2.1 Diffusion in a Gas |
| 2.2 Diffusion in Liquids |
| 3 Diffusion in Amorphous Materials |
| 3.1 Amorphous Materials |
| 3.2 Network Glass Formers |
| 3.3 The Glass Transition |
| 3.4 The Free-Volume Model |
| 3.5 Fictive Temperature |
| 3.6 Diffusion in Polymers |
| 3.7 The Stokes-Einstein Relationship |
| 4 Diffusion in Crystals |
| 4.1 Diffusion in a Crystal |
| 4.2 Diffusion Mechanisms in Crystals |
| 4.4 Equilibrium Concentration of Vacancies |
| 4.5 Simmons and Balluffi Experiment |
| 4.6 Ionic and Covalent Crystals |
| 4.7 Stoichiometry |
| 4.8 Measurement of Diffusion Coefficients |
| 4.9 Surface Diffusion |
| 4.10 Diffusion in Grain Boundaries |
| 4.11 Kirkendall Effect |
| 4.12 Whisker Growth |
| 4.13 Electromigration |
| 5 Diffusion in Semiconductors |
| 5.1 Introduction |
| 5.2.1 Vacancy Diffusion in Silicon |
| 5.2.2 Diffusion of Phosphorus in Silicon |
| 5.2.3 Diffusion of Arsenic in Silicon |
| 5.2.4 Diffusion of Boron in Silicon |
| 5.3 Diffusion of Zinc in GaAs |
| 5.4 Recombination-enhanced Diffusion |
| 5.5 Doping of Semiconductors |
| 5.6 Point-Defect Generation in Silicon during Crystal Growth |
| 5.7 Migration of Interstitials (and Liquid Droplets) in a Temperature Gradient |
| 5.8 Oxygen in Silicon |
| 5.9 Gettering |
| 5.10 Solid-State Doping |
| 6 Ion Implantation |
| 6.1 Introduction |
| 6.2 Ion Interactions |
| 6.3 Implantation Damage |
| 6.4 Rutherford Backscattering |
| 6.5 Channeling |
| 6.6 Silicon-on-Insulator |
| 7 Mathematics of Diffusion |
| 7.1 Random Walk |
| 7.2 The Diffusion Equation |
| 7.3 Solutions to the Diffusion Equation |
| 7.4 Numerical Methods |
| 7.5 Boltzmann-Matano Analysis |
| 8 Stefan Problems |
| 8.1 Steady-State Solutions to the Diffusion Equation |
| 8.2 Deal-Grove Analysis |
| 8.3 Diffusion-Controlled Growth of a Spherical Precipitate |
| 8.4 Diffusion-Limited Growth in Cylindrical Coordinates |
| 9 Phase Transformations |
| 9.1 Transformation-Rate-Limited Growth |
| 9.2 Diffusion-Limited Growth |
| 9.3 Thermally Limited Growth |
| 9.4 Casting of Metals |
| 9.5 Operating Point |
| 10 Crystal Growth Methods |
| 10.1 Melt Growth |
| 10.2 Solution Growth |
| 10.3 Vapor-Phase Growth |
| 10.4 Stoichiometry |
| 11 Segregation |
| 11.1 Segregation during a Phase Change |
| 11.2 Lever Rule |
| 11.3 Scheil Equation |
| 11.4 Zone Refining |
| 11.5 Diffusion at a Moving Interface |
| 11.6 Segregation in Three Dimensions |
| 11.7 Burton, Primm and Schlicter Analysis |
| 12 Interface Instabilities |
| 12.1 Constitutional Supercooling |
| 12.2 Mullins and Sekerka Linear Instability Analysis |
| 12.3 Anisotropic Interface Kinetics |
| 13 Chemical Reaction Rate Theory |
| 13.1 The Equilibrium Constant |
| 13.2 Reaction Rate Theory |
| 13.3 Reaction Ra |
