Cover image for Charged semiconductor defects : structure, thermodynamics and diffusion
Title:
Charged semiconductor defects : structure, thermodynamics and diffusion
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Series:
Engineering materials and processes
Publication Information:
Berlin : Springer, 2009
Physical Description:
xiv, 294 p. : ill. ; 24 cm.
ISBN:
9781848820586
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30000010193947 QC611.6.D4 S44 2009 Open Access Book Book
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Summary

Summary

Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.


Author Notes

Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.

Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.


Table of Contents

1 Introductionp. 1
Referencesp. 3
2 Fundamentals of Defect Ionization and Transportp. 5
2.1 Introductionp. 5
2.2 Thermodynamics of Defect Chargingp. 5
2.2.1 Free Energies, Ionization Levels, and Charged Defect Concentrationsp. 7
2.2.2 Ionization Entropyp. 13
2.2.3 Energetics of Defect Clusteringp. 15
2.2.4 Effects of Gas Pressure on Defect Concentrationp. 17
2.3 Thermal Diffusionp. 19
2.4 Drift in Electric Fieldsp. 24
2.5 Defect Kineticsp. 25
2.5.1 Reactionsp. 25
2.5.2 Chargingp. 29
2.6 Direct Surface-Bulk Couplingp. 31
2.7 Non-Thermally Stimulated Defect Charging and Formationp. 32
2.7.1 Photostimulationp. 32
2.7.2 Ion-Defect Interactionsp. 33
Referencesp. 34
3 Experimental and Computational Characterizationp. 39
3.1 Experimental Characterizationp. 39
3.1.1 Direct Detection of Bulk Defectsp. 39
3.1.2 Indirect Detection of Bulk Defectsp. 43
3.1.3 Diffusion in the Bulkp. 44
3.1.4 Direct Detection of Surface Defectsp. 45
3.1.5 Diffusion on the Surfacep. 46
3.2 Computational Predictionp. 47
3.2.1 Density Functional Theoryp. 47
3.2.2 Other Atomistic Methodsp. 50
3.2.3 Maximum Likelihood Estimationp. 51
3.2.4 Surfaces and Interfacesp. 56
Referencesp. 56
4 Trends in Charged Defect Behaviorp. 63
4.1 Defect Formationp. 63
4.1.1 Effects of Crystal Structure and Atomic Propertiesp. 63
4.1.2 Effects of Stoichiometryp. 66
4.2 Defect Geometryp. 68
4.3 Defect Chargingp. 69
4.3.1 Bulk vs. Surfacep. 70
4.3.2 Point Defects vs. Defect Aggregatesp. 71
4.4 Defect Diffusionp. 71
Referencesp. 72
5 Intrinsic Defects: Structurep. 73
5.1 Bulk Defectsp. 73
5.1.1 Siliconp. 76
5.1.2 Germaniump. 84
5.1.3 Gallium Arsenidep. 86
5.1.4 Other III-V Semiconductorsp. 92
5.1.5 Titanium Dioxidep. 95
5.1.6 Other Oxide Semiconductorsp. 100
5.2 Surface Defectsp. 105
5.2.1 Siliconp. 106
5.2.2 Germaniump. 111
5.2.3 Gallium Arsenidep. 112
5.2.4 Other III-V Semiconductorsp. 116
5.2.5 Titanium Dioxidep. 120
5.2.6 Other Oxide Semiconductorsp. 122
Referencesp. 123
6 Intrinsic Defects: Ionization Thermodynamicsp. 131
6.1 Bulk Defectsp. 131
6.1.1 Siliconp. 131
6.1.2 Germaniump. 144
6.1.3 Gallium Arsenidep. 148
6.1.4 Other III-V Semiconductorsp. 156
6.1.5 Titanium Dioxidep. 160
6.1.6 Other Oxide Semiconductorsp. 166
6.2 Surface Defectsp. 173
6.2.1 Siliconp. 173
6.2.2 Germaniump. 176
6.2.3 Gallium Arsenidep. 178
6.2.4 Other III-V Semiconductorsp. 181
6.2.5 Titanium Dioxidep. 183
6.2.6 Other Oxide Semiconductorsp. 185
Referencesp. 187
7 Intrinsic Defects: Diffusionp. 195
7.1 Bulk Defectsp. 195
7.1.1 Point Defectsp. 196
7.1.2 Associates and Clustersp. 212
7.2 Surface Defectsp. 215
7.2.1 Point Defectsp. 215
7.2.2 Associates and Clustersp. 222
7.3 Photostimulated Diffusionp. 222
7.3.1 Photostimulated Diffusion in the Bulkp. 223
7.3.2 Photostimulated Diffusion on the Surfacep. 225
Referencesp. 226
8 Extrinsic Defectsp. 233
8.1 Bulk Defectsp. 233
8.1.1 Siliconp. 234
8.1.2 Germaniump. 249
8.1.3 Gallium Arsenidep. 255
8.1.4 Other III-V Semiconductorsp. 260
8.1.5 Titanium Dioxidep. 265
8.1.6 Other Oxide Semiconductorsp. 271
8.2 Surface Defectsp. 277
8.2.1 Siliconp. 278
8.2.2 Gallium Arsenidep. 280
8.2.3 Titanium Dioxidep. 281
Referencesp. 281
Indexp. 291