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Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
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Searching... | 30000010193947 | QC611.6.D4 S44 2009 | Open Access Book | Book | Searching... |
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Summary
Summary
Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of "defect engineering". For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. "Charged Defects in Semiconductors" details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author Notes
Edmund Seebauer is currently Head of Chemical and Biomolecular Engineering at the University of Illinois at Urbana-Champaign. Since 1987 he has been the Chair or co-Chair of numerous sessions on surface chemisty, materials chemistry and microelectronics fabrication for national meetings of AIChE, AVS and MRS.
Meredith Kratzer is working towards a PhD in Chemical & Biomolecular Engineering at the University of Illinois at Urbana-Champaign. She received her B.S. (cum laude) in Chemical Engineering from Cornell University.
Table of Contents
1 Introduction | p. 1 |
References | p. 3 |
2 Fundamentals of Defect Ionization and Transport | p. 5 |
2.1 Introduction | p. 5 |
2.2 Thermodynamics of Defect Charging | p. 5 |
2.2.1 Free Energies, Ionization Levels, and Charged Defect Concentrations | p. 7 |
2.2.2 Ionization Entropy | p. 13 |
2.2.3 Energetics of Defect Clustering | p. 15 |
2.2.4 Effects of Gas Pressure on Defect Concentration | p. 17 |
2.3 Thermal Diffusion | p. 19 |
2.4 Drift in Electric Fields | p. 24 |
2.5 Defect Kinetics | p. 25 |
2.5.1 Reactions | p. 25 |
2.5.2 Charging | p. 29 |
2.6 Direct Surface-Bulk Coupling | p. 31 |
2.7 Non-Thermally Stimulated Defect Charging and Formation | p. 32 |
2.7.1 Photostimulation | p. 32 |
2.7.2 Ion-Defect Interactions | p. 33 |
References | p. 34 |
3 Experimental and Computational Characterization | p. 39 |
3.1 Experimental Characterization | p. 39 |
3.1.1 Direct Detection of Bulk Defects | p. 39 |
3.1.2 Indirect Detection of Bulk Defects | p. 43 |
3.1.3 Diffusion in the Bulk | p. 44 |
3.1.4 Direct Detection of Surface Defects | p. 45 |
3.1.5 Diffusion on the Surface | p. 46 |
3.2 Computational Prediction | p. 47 |
3.2.1 Density Functional Theory | p. 47 |
3.2.2 Other Atomistic Methods | p. 50 |
3.2.3 Maximum Likelihood Estimation | p. 51 |
3.2.4 Surfaces and Interfaces | p. 56 |
References | p. 56 |
4 Trends in Charged Defect Behavior | p. 63 |
4.1 Defect Formation | p. 63 |
4.1.1 Effects of Crystal Structure and Atomic Properties | p. 63 |
4.1.2 Effects of Stoichiometry | p. 66 |
4.2 Defect Geometry | p. 68 |
4.3 Defect Charging | p. 69 |
4.3.1 Bulk vs. Surface | p. 70 |
4.3.2 Point Defects vs. Defect Aggregates | p. 71 |
4.4 Defect Diffusion | p. 71 |
References | p. 72 |
5 Intrinsic Defects: Structure | p. 73 |
5.1 Bulk Defects | p. 73 |
5.1.1 Silicon | p. 76 |
5.1.2 Germanium | p. 84 |
5.1.3 Gallium Arsenide | p. 86 |
5.1.4 Other III-V Semiconductors | p. 92 |
5.1.5 Titanium Dioxide | p. 95 |
5.1.6 Other Oxide Semiconductors | p. 100 |
5.2 Surface Defects | p. 105 |
5.2.1 Silicon | p. 106 |
5.2.2 Germanium | p. 111 |
5.2.3 Gallium Arsenide | p. 112 |
5.2.4 Other III-V Semiconductors | p. 116 |
5.2.5 Titanium Dioxide | p. 120 |
5.2.6 Other Oxide Semiconductors | p. 122 |
References | p. 123 |
6 Intrinsic Defects: Ionization Thermodynamics | p. 131 |
6.1 Bulk Defects | p. 131 |
6.1.1 Silicon | p. 131 |
6.1.2 Germanium | p. 144 |
6.1.3 Gallium Arsenide | p. 148 |
6.1.4 Other III-V Semiconductors | p. 156 |
6.1.5 Titanium Dioxide | p. 160 |
6.1.6 Other Oxide Semiconductors | p. 166 |
6.2 Surface Defects | p. 173 |
6.2.1 Silicon | p. 173 |
6.2.2 Germanium | p. 176 |
6.2.3 Gallium Arsenide | p. 178 |
6.2.4 Other III-V Semiconductors | p. 181 |
6.2.5 Titanium Dioxide | p. 183 |
6.2.6 Other Oxide Semiconductors | p. 185 |
References | p. 187 |
7 Intrinsic Defects: Diffusion | p. 195 |
7.1 Bulk Defects | p. 195 |
7.1.1 Point Defects | p. 196 |
7.1.2 Associates and Clusters | p. 212 |
7.2 Surface Defects | p. 215 |
7.2.1 Point Defects | p. 215 |
7.2.2 Associates and Clusters | p. 222 |
7.3 Photostimulated Diffusion | p. 222 |
7.3.1 Photostimulated Diffusion in the Bulk | p. 223 |
7.3.2 Photostimulated Diffusion on the Surface | p. 225 |
References | p. 226 |
8 Extrinsic Defects | p. 233 |
8.1 Bulk Defects | p. 233 |
8.1.1 Silicon | p. 234 |
8.1.2 Germanium | p. 249 |
8.1.3 Gallium Arsenide | p. 255 |
8.1.4 Other III-V Semiconductors | p. 260 |
8.1.5 Titanium Dioxide | p. 265 |
8.1.6 Other Oxide Semiconductors | p. 271 |
8.2 Surface Defects | p. 277 |
8.2.1 Silicon | p. 278 |
8.2.2 Gallium Arsenide | p. 280 |
8.2.3 Titanium Dioxide | p. 281 |
References | p. 281 |
Index | p. 291 |