A. CappyMarc Parisot and Robert SoaresRomuald WroblewskiYves-Michel MartiJ. Baucells and A. Mediavilla and A. TazonRobert SoaresA. P. S. KhannaMaurice Gloanec and Ernesto H. PereaC. Kermarrec and C. RumelhardJ. M. Dumas and J. Paugam and C. Vuchener

Authors' Biographies	p. ix
Foreword	p. xv
Acknowledgments	p. xvii
Chapter 1 Fabrication and Operation of GaAs MESFETs	p. 1
1.1 Fabrication of GaAs MESFETs	p. 1
1.2 Principles of operation of GaAs MESFETs	p. 9
1.3 Low frequency characterization of MESFETs	p. 24
References	p. 31
Chapter 2 GaAs MESFETs: S Parameter Measurements and their Use in Circuit Design	p. 33
2.1 Introduction	p. 33
2.2 Basic principles	p. 33
2.3 S parameter measurements--general concepts	p. 47
2.4 Measurement of the fixture S parameters	p. 55
2.5 On-wafer S parameter measurements	p. 63
2.6 Utilization of S parameters	p. 67
2.7 Conclusion	p. 88
Acknowledgments	p. 88
References	p. 88
Appendix 2.1 Conversions between two-port parameters normalized to Z[superscript 0]	p. 91
Appendix 2.2 Self-calibration procedure: error term determination	p. 94
Chapter 3 Synthesis and Design of Small-signal and Low Noise GaAs MESFET Amplifiers	p. 101
3.1 Introduction	p. 101
3.2 Design considerations for small-signal MESFET amplifiers	p. 102
3.3 Bandpass amplifiers using the reactive matching principle	p. 108
3.4 Ultrabroadband matched amplifiers	p. 134
3.5 Distributed amplifiers	p. 147
3.6 Low noise MESFET amplifiers	p. 153
3.7 Conclusions	p. 175
Acknowledgments	p. 176
References	p. 176
Chapter 4 Linear Simulation and Computer-aided Engineering	p. 183
4.1 The computer-aided engineering approach	p. 183
4.2 Modelling of circuit elements	p. 185
4.3 Linear circuit analysis	p. 193
4.4 Optimization	p. 201
4.5 Statistical methods	p. 208
4.6 Layout	p. 213
4.7 Data management	p. 218
4.8 Future developments	p. 222
References	p. 224
Chapter 5 Nonlinear Analysis	p. 227
5.1 Introduction	p. 227
5.2 Volterra series	p. 228
5.3 The describing-function method	p. 233
5.4 Time-domain analysis	p. 236
5.5 The harmonic balance method	p. 239
5.6 Advantages and disadvantages of each method	p. 245
5.7 GaAs MESFET models	p. 246
5.8 Applications of the nonlinear MESFET model	p. 270
References	p. 283
Chapter 6 Power GaAs MESFET Amplifiers	p. 287
6.1 Introduction	p. 287
6.2 Device considerations	p. 287
6.3 Large-signal characterization and modelling	p. 296
6.4 Power amplifier design	p. 314
Acknowledgments	p. 342
References	p. 342
Chapter 7 Oscillators	p. 345
7.1 Introduction	p. 345
7.2 Concept of negative resistance	p. 347
7.3 Three-port S parameter characterization of transistors	p. 348
7.4 Oscillation and stability conditions	p. 350
7.5 Fixed-frequency oscillators	p. 355
7.6 Wideband tunable oscillators	p. 382
7.7 Oscillator measurements	p. 400
Acknowledgments	p. 410
References	p. 411
Appendix Conversion of two-port S parameters to three-port S parameters	p. 414
Chapter 8 GaAs Digital Integrated Circuits	p. 417
8.1 Introduction	p. 417
8.2 Advantages and constraints of GaAs in integrated circuit implementations	p. 418
8.3 GaAs MESFET characteristics	p. 424
8.4 Main features of the principal GaAs logic families	p. 427
8.5 GaAs digital integrated circuit design	p. 434
8.6 Manufacture of GaAs digital integrated circuits	p. 438
8.7 Examples of GaAs digital integrated circuits	p. 438
8.8 GaAs analog integrated circuits	p. 457
8.9 Tests of GaAs digital integrated circuits	p. 462
8.10 Packaging of GaAs digital integrated circuits	p. 464
References	p. 465
Chapter 9 Microwave Monolithic Integrated Circuits	p. 471
9.1 Introduction	p. 471
9.2 Technology	p. 473
9.3 Monolithic circuit components	p. 477
9.4 Amplifiers	p. 488
9.5 Switching and control functions	p. 497
9.6 Oscillators and frequency-processing functions	p. 516
9.7 Multifunction MMICs	p. 539
9.8 Future developments	p. 542
References	p. 544
Chapter 10 An Aspect of GaAs MESFET Reliability: Surface-induced Degradation Mechanisms	p. 551
10.1 Introduction	p. 551
10.2 Power MESFETs	p. 552
10.3 MESFETs developed for digital integrated circuits	p. 567
10.4 Conclusion	p. 570
References	p. 571
Index	p. 573