Graphene : properties, preparation, characterisation and devices

Title:

Series:

Woodhead Publishing series in electronic and optical materials ; 57

Publication Information:

Cambridge ; Waltham, M.A. : Woodhead Publishing, 2014

Physical Description:

xxiii, 376 pages : illustrations ; 24 cm.

ISBN:

9780857095084

Subject Term:

Graphene

Added Author:

Skákalová, Viera,

Kaiser, Alan B.,

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Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010340848	QD181.C1 G734 2014	Open Access Book	Book	Searching... Unknown

Graphene: Properties, Preparation, Characterisation and Devices reviews the preparation and properties of this exciting material. Graphene is a single-atom-thick sheet of carbon with properties, such as the ability to conduct light and electrons, which could make it potentially suitable for a variety of devices and applications, including electronics, sensors, and photonics.

Chapters in part one explore the preparation of , including epitaxial growth of graphene on silicon carbide, chemical vapor deposition (CVD) growth of graphene films, chemically derived graphene, and graphene produced by electrochemical exfoliation. Part two focuses on the characterization of graphene using techniques including transmission electron microscopy (TEM), scanning tunneling microscopy (STM), and Raman spectroscopy. These chapters also discuss photoemission of low dimensional carbon systems. Finally, chapters in part three discuss electronic transport properties of graphene and graphene devices. This part highlights electronic transport in bilayer graphene, single charge transport, and the effect of adsorbents on electronic transport in graphene. It also explores graphene spintronics and nano-electro-mechanics (NEMS).

Graphene is a comprehensive resource for academics, materials scientists, and electrical engineers working in the microelectronics and optoelectronics industries.

Author Notes

Viera Sk#65533;kalov#65533; works for the Faculty of Physics, University of Vienna, Austria.

Alan Kaiser is Emeritus Professor at the School of Chemical and Physical Sciences and MacDiarmid Institute for Advanced Materials and Nanotechnology, Victoria University of Wellington, New Zealand.

H. Huang, National University of Singapore, Singapore and S. Chen, Nanyang Technological University, Singapore and A. T. S. Wee and W. Chen, National University of Singapore, SingaporeO. Frank and M. Kalbac and J. Heyrovsky Institute of Physical Chemistry of the AS CR, v. v. i., Czech RepublicR. S. Sundaram, Max Planck Institute for Solid State Research, Germany and University of Cambridge, UKS. Bose and T. Kuila and N. H. Kim and J. H. Lee, Chonbuk National University, Republic of KoreaJ. C Meyer, University of Vienna, AustriaA. L. Vázquez de Parga and R. Miranda, Autonomous University of Madrid, Spain and Madrid Institute for Advanced Studies in Nanoscience, SpainM. Hulman, International Laser Center and Danubia NanoTech, Slovak RepublicP. Ayala, University of Vienna, AustriaK. I. Bolotin, Vanderbilt University, USAR. Asgari, Institute for Research in Fundamental Sciences (IPM), IranY. C Lin and P. W. Chiu, National Tsing Hua University, Republic of ChinaD. S. Lee, Korea Institute of Science and Technology (KIST), South KoreaM. Shiraishi, Osaka University, JapanZ. Moktadir, Southampton University, UK

Contributor contact details	p. xi
Woodhead Publishing Series in Electronic and Optical Materials	p. xv
Preface	p. xxi
Part I Preparation of graphene	p. 1
1 Epitaxial growth of graphene on silicon carbide (SiC)	p. 3
1.1 Introduction	p. 3
1.2 Ultrahigh vacuum (UHV) thermal decomposition of single-crystal SiC	p. 4
1.3 Thermal decomposition of single-crystal SiC under ambient pressure conditions	p. 15
1.4 Thermal decomposition of single-crystal SiC thin films and polycrystalline SiC substrates	p. 18
1.5 Epitaxial graphene formed by intercalation	p. 20
1.6 Conclusion	p. 21
1.7 Acknowledgements	p. 22
1.8 References	p. 22
2 Chemical vapor deposition (CVD) growth of graphene films	p. 27
2.1 Introduction	p. 27
2.2 Chemical vapor deposition (CVD) on nickel	p. 28
2.3 Graphene with large domain sizes on copper	p. 31
2.4 Growth on copper single crystals	p. 34
2.5 Periodically stacked multilayers	p. 36
2.6 Isotope labeling of CVD graphene	p. 38
2.7 Conclusion	p. 42
2.8 Acknowledgment	p. 42
2.9 References	p. 42
3 Chemically derived grapheme	p. 50
3.1 Introduction	p. 50
3.2 Synthesis of graphene oxide (GO)	p. 52
3.3 Reduction of graphene oxide (GO)	p. 53
3.4 Physicochemical structure of graphene oxide (GO)	p. 54
3.5 Electrical transport in graphene oxide (GO)	p. 60
3.6 Applications of graphene oxide/reduced grapheme oxide (GO/RGO)	p. 64
3.7 Conclusion	p. 72
3.8 Acknowledgements	p. 72
3.9 References	p. 72
4 Graphene produced by electrochemical exfoliation	p. 81
4.1 Introduction	p. 81
4.2 Synthesis of graphene by electrochemical exfoliation: a basic concept	p. 83
4.3 Applications of graphene and graphene-based materials	p. 93
4.4 Conclusion	p. 94
4.5 Acknowledgments	p. 95
4.6 References	p. 95
Part II Characterisation of graphene	p. 99
5 Transmission electron microscopy (TEM) of grapheme	p. 101
5.1 Introduction	p. 101
5.2 Graphene structure basics	p. 104
5.3 Electron diffraction analysis of graphene	p. 105
5.4 Graphene and defects in graphene observed by aberration-corrected transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM)	p. 107
5.5 Insights from electron microscopic studies of graphene	p. 112
5.6 Conclusion	p. 118
5.7 References	p. 119
6 Scanning tunneling microscopy (STM) of grapheme	p. 124
6.1 Introduction	p. 124
6.2 Morphology, perfection and electronic structure of graphene flakes deposited on inert substrates	p. 125
6.3 Morphology, perfection and electronic structure of graphene epitaxially grown on semiconductor and metallic substrates	p. 131
6.4 Scanning tunneling microscopy (STM)/scanning tunneling spectroscopy (STS) of point defects	p. 146
6.5 STM/STS on graphene nanoribbons (GNR)	p. 148
6.6 Conclusion	p. 150
6.7 References	p. 150
7 Raman spectroscopy of grapheme	p. 156
7.1 Introduction	p. 156
7.2 Principles of Raman scattering	p. 157
7.3 Phonons in graphene	p. 160
7.4 Electronic structure of graphene	p. 162
7.5 Raman spectrum of graphene	p. 165
7.6 Conclusion	p. 181
7.7 Acknowledgement	p. 181
7.8 References	p. 181
8 Photoemission of low-dimensional carbon systems	p. 184
8.1 Introduction	p. 184
8.2 Photoemission spectroscopy	p. 185
8.3 Accessing the electronic properties of carbon sp 2 hybridized systems: the C1s core level	p. 190
8.4 Chemical state identification: inspection of bonding environments	p. 193
8.5 Valence-band electronic structure	p. 194
8.6 Conclusion	p. 194
8.7 Acknowledgement	p. 195
8.8 References	p. 195
Part III Electronic transport properties of grapheme and graphene devices	p. 197
9 Electronic transport in graphene: towards high mobility	p. 199
9.1 Introduction	p. 199
9.2 Metrics for scattering strength	p. 200
9.3 Methods of graphene synthesis	p. 204
9.4 Sources of scattering in graphene	p. 205
9.5 Approaches to increase carrier mobility	p. 211
9.6 Physical phenomena in high-mobility graphene	p. 219
9.7 Conclusion	p. 221
9.8 Acknowledgments	p. 221
9.9 References	p. 222
10 Electronic transport in bilayer grapheme	p. 228
10.1 Introduction	p. 228
10.2 Historical development of bilayer graphene	p. 230
10.3 Transport properties in bilayer graphene systems	p. 235
10.4 Many-body effects of transport properties in bilayer graphene	p. 246
10.5 Conclusion	p. 260
10.6 References	p. 261
11 Effect of adsorbents on electronic transport in grapheme	p. 265
11.1 Introduction	p. 265
11.2 Interaction of adsorbates with graphene	p. 266
11.3 Transfer-induced metal and molecule adsorptions	p. 268
11.4 Influence of adsorbates on graphene field-effect transistors	p. 274
11.5 Removal of polymer residues on graphene	p. 279
11.6 Conclusion	p. 287
11.7 References	p. 287
12 Single-charge transport in grapheme	p. 292
12.1 Introduction	p. 292
12.2 Single-charge tunneling	p. 293
12.3 Electrical properties of graphene	p. 296
12.4 Single-charge tunneling in graphene	p. 302
12.5 Charge localization in graphene	p. 311
12.6 Conclusion	p. 317
12.7 References	p. 317
13 Graphene spintronics	p. 324
13.1 Introduction	p. 324
13.2 Theories and important concepts	p. 326
13.3 Experiments for generating pure spin current and the physical properties of pure spin current	p. 330
13.4 Conclusion and future trends	p. 337
13.5 References	p. 339
14 Graphene nanoelectromechanics (NEMS)	p. 341
14.1 Introduction	p. 341
14.2 Graphene versus silicon	p. 342
14.3 Graphene mechanical attributes	p. 343
14.4 Fabrication technology for graphene microelectromechanical systems (MEMS)	p. 346
14.5 Graphene nanoresonators	p. 349
14.6 Graphene nanomechanical sensors	p. 356
14.7 Conclusion and future trends	p. 358
14.8 References	p. 358
Index	p. 363

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