Title:
Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.
Series:
Materials Research Society symposium proceedings ; v. 1335
Materials Research Society symposia proceedings ; v. 1335.
Publication Information:
Warrendale, Penn. : Materials Research Society ; Cambridge ; New York : Cambridge University Press, 2012.
Physical Description:
ix, 127 p. : ill. ; 24 cm.
ISBN:
9781605113128
General Note:
"Symposium O, 'Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics, held at the April 25-29, 2011 MRS Spring Meeting in San Francisco, California"--P. ix.
Added Author:
Added Corporate Author:
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Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000010312311 | TK7874.53 S965 2012 | Open Access Book | Book | Searching... |
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Summary
Summary
This volume includes selected papers based on the presentations given at Symposium O, "Materials, Processes, and Reliability for Advanced Interconnects for Micro- and Nanoelectronics," held at the April 25−29, 2011 MRS Spring Meeting in San Francisco, California. The symposium included topics relating to low-k dielectrics, integration, reliability, metallization, packaging and emerging technologies.
Table of Contents
| Part I Low-k Materials |
| 1 Ultra low-k materials based on self-assembled organic polymersMarianna Pantouvaki |
| 2 New designs of hydrophobic and mesostructured ultra low k materials with isolated mesoporesAnthony Grunenwald |
| 3 Evaluation of ultra-thin layer fabricated by wet-process as a pore-seal for porous low-k filmsShoko Ono |
| 4 Ozone treatment on nanoporous ultralow dielectric materials to optimize their mechanical and dielectrical propertiesHee-Woo Rhee |
| Part II Integration |
| 5 Optimizing stressor film deposition sequence in polish rate order for best planarizationJohn H. Zhang |
| 6 Effect of chemical solutions and surface wettability on the stability of advanced porous low-k materialsQuoc Toan Le |
| 7 A less damaging patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devicesSven Zimmermann |
| 8 Defects in low-ĸ insulators (ĸ=2.5âÇô2.0): ESR analysis and charge injectionValeri Afanas'ev |
| 9 Patterning organic fluorescent molecules with SAM patternsNan Lu |
| 10 Optical interconnect technologies based on silicon photonicsWim Bogaerts |
| Part III Metallization |
| 11 32nm node highly reliable Cu/low-k integration technology with CuMn alloy seedShaoning Yao |
| 12 Amorphous Ta-N as a diffusion barrier for Cu metallizationNeda Dalili |
| 13 Comparison of TiN thin films grown on SiO2 by reactive dc magnetron sputtering and high power impulse magnetron sputteringJon Gudmundsson |
| 14 Specific contact resistance of ohmic contacts on n-type SiC membranesPatrick Leech |
| 15 Development of electrochemical copper deposition screening methodologies for next generation additive selectionKevin Ryan |
| Part IV 3D Packaging |
| 16 Microbump impact on reliability and performance in through-silicon via stacksAditya Karmarkar |
| 17 Tailoring the crystallographic texture and electrical properties of inkjet-printed interconnects for use in microelectronicsRomain Cauchois |
