Fundamentals of ultra-thin-body MOSFETs and FinFETs

Title:

Personal Author:

Fossum, Jerry G., 1943-, author

Publication Information:

Cambridge ; New York : Cambridge University Press, 2013

Physical Description:

xvi, 210 pages : illustrations ; 26 cm.

ISBN:

9781107030411

Abstract:

"Understand the theory, design, and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * describes FD/SOI MOSFETs and 3-D FinFETs in detail * covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM"--provided by publisher

Subject Term:

Metal oxide semiconductor field-effect transistors

Integrated circuits -- Very large scale integration

Added Author:

Trivedi, Vishal P.,

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010335360	TK7871.99.M44 F67 2013	Open Access Book	Book	Searching... Unknown

On Order

Summary

Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. * Describes FD/SOI MOSFETs and 3-D FinFETs in detail * Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM * Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time * Projects potential nanoscale UTB CMOS performances * Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.