Title:
Properties of lattice-matched and strained indium gallium arsenide
Series:
EMIS datareviews series ; no. 8
Publication Information:
New York : Institution of Electrical Engineers, 1993
Physical Description:
xxi, 317 p. : ill. ; 28 cm.
ISBN:
9780863416620
9780852968659
Added Author:
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000010198668 | QC611.8.G3 P76 1993 | Open Access Book | Book | Searching... |
On Order
Summary
Summary
The semiconductor InGaAs (indium gallium arsenide) plays a pivotal role in the study of quantum systems which provide promising applications in the fields of microelectronics and optoelectronics. This reference explores recent developments with InGaAs. Leading researchers from the USA, Europe and Japan cover such issues as structural, thermal, mechanical and vibrational properties, the band structure of lattice-matched and strained alloys, transport and surface properties, radiative and non-radiative recombinations, expitaxial growth, doping, etching of InGaAs and related heterostructures, photodetectors, FETs, double heterostructure and quantum well lasers.
