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Summary
Summary
Combining solid theoretical discussions with practical design examples, this book is an essential reference on developing RF and microwave switchmode power amplifiers.
With this book you will be able to:
Design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors using well-known and novel theoretical approaches, nonlinear simulation tools, and practical design techniques Design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies, with specified output power Understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements Combine multi-stage Doherty architecture and switchmode power amplifiers to significantly increase efficiency of the entire radio transmitter Learn the different types of predistortion linearization techniques required to improve the quality of signal transmission in a nonlinear amplifying systemNew to this edition:
Comprehensive overview of different Doherty architectures which are, and will be used in modern communication systems to save power consumption and reduce costs A new chapter on analog and digital predistortion techniques Coverage of broadband Class-F power amplifiers, high-power inverse Class-F power amplifiers for WCDMA systems, broadband Class-E techniquesAuthor Notes
Dr. Andrei Grebennikov is a Senior Member of the IEEE and a Member of Editorial Board of the International Journal of RF and Microwave Computer-Aided Engineering. He received his Dipl. Ing. degree in radio electronics from the Moscow Institute of Physics and Technology and Ph.D. degree in radio engineering from the Moscow Technical University of Communications and Informatics in 1980 and 1991, respectively.
He has obtained a long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, Russia, Institute of Microelectronics, Singapore, M/A-COM, Ireland, Infineon Technologies, Germany/Austria, and Bell Labs, Alcatel-Lucent, Ireland, as an engineer, researcher, lecturer, and educator.
He lectured as a Guest Professor in the University of Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the International Microwave Symposium, European and Asia-Pacific Microwave Conferences, Institute of Microelectronics, Singapore, and Motorola Design Centre, Malaysia. He is an author or co-author of more than 80 technical papers, 5 books, and 15 European and US patents.
In 1989, Mr. Sokal was elected a Fellow of the IEEE, for his contributions to the technology of high-efficiency switching-mode power conversion and switching-mode RF power amplification. In 2007, he received the Microwave Pioneer award from the IEEE Microwave Theory and Techniques Society, in recognition of a major, lasting, contribution ? development of the Class-E RF power amplifier. In 2011, he was awarded an honorary doctorate from the Polytechnic University of Madrid, Spain, for developing the high-efficiency switching-mode Class-E RF power amplifier
In 1965, he founded Design Automation, Inc., a consulting company doing electronics design review, product design, and solving ''unsolvable'' problems for equipment-manufacturing clients. Much of that work has been on high-efficiency switching-mode RF power amplifiers at frequencies up to 2.5 GHz, and switching-mode dc-dc power converters. He holds eight patents in power electronics, and is the author or co-author of two books and approximately 130 technical papers, mostly on high-efficiency generation of RF power and dc power.
During 1950-1965, he held engineering and supervisory positions for design, manufacture, and applications of analog and digital equipment.
He received B.S. and M.S. degrees in Electrical Engineering from the Massachusetts Institute of Technology, Cambridge, Massachusetts, in 1950.
He is a Technical Adviser to the American Radio Relay League, on RF power amplifiers and dc power supplies, and a member of the Electromagnetics Society, Eta Kappa Nu, and Sigma Xi honorary professional societies.
Marc J. Franco holds a Ph.D. degree in electrical engineering from Drexel University, Philadelphia. He is currently with RFMD, Technology Platforms, Component Advanced Development, Greensboro, North Carolina, USA, where he is involved with the design of advanced RF integrated circuits and integrated front-end modules. He was previously with Linearizer Technology, Inc. Hamilton, New Jersey, where he led the development of advanced RF products for commercial, military and space applications.
Dr. Franco is a regular reviewer for the Radio & Wireless Symposium, the European Microwave Conference and the MTT International Microwave Symposium. He is a member of the MTT-17 HF-VHF-UHF Technology Technical Coordination Committee and has co-chaired the IEEE Topical Conference on Power Amplifiers for Radio and Wireless Applications. He is a Senior Member of the IEEE.
His current research interests include high-efficiency RF power amplifiers, nonlinear distortion correction, and electromagnetic analysis of structures.
Table of Contents
About the Authors | p. xi |
Foreword | p. xiii |
Preface | p. xv |
Acknowledgments | p. xxi |
Chapter 1 Power Amplifier Design Principles | p. 1 |
1.1 Spectral-domain analysis | p. 1 |
1.2 Basic classes of operation: A, AB, B, and C | p. 7 |
1.3 Load line and output impedance | p. 13 |
1.4 Classes of operation based upon a finite number of harmonics | p. 17 |
1.5 Active device models | p. 20 |
1.5.1 LDMOSFETs | p. 20 |
1.5.2 GaAs MESFETs and GaN HEMTs | p. 24 |
1.5.3 Low- and high-voltage HBTs | p. 29 |
1.6 High-frequency conduction angle | p. 32 |
1.7 Nonlinear effect of collector capacitance | p. 38 |
1.8 Push-pull power amplifiers | p. 42 |
1.9 Power gain and impedance matching | p. 47 |
1.10 Load-pull characterization | p. 52 |
1.11 Amplifier stability | p. 54 |
1.12 Parametric oscillations | p. 62 |
1.13 Bias circuits | p. 67 |
1.14 Distortion fundamentals | p. 72 |
1.14.1 Linearity | p. 72 |
1.14.2 Time variance | p. 73 |
1.14.3 Memory | p. 73 |
1.14.4 Distortion of electrical signals | p. 73 |
1.14.5 Types of distortion | p. 74 |
1.14.6 Nonlinear distortion analysis for sinusoidal signals - measures of nonlinear distortion | p. 75 |
References | p. 78 |
Chapter 2 Class-D Power Amplifiers | p. 83 |
2.1 Switchmode power amplifiers with resistive load | p. 83 |
2.2 Complementary voltage-switching configuration | p. 92 |
2.3 Transformer-coupled voltage-switching configuration | p. 97 |
2.4 Transformer-coupled current-switching configuration | p. 99 |
2.5 Symmetrical current-switching configuration | p. 103 |
2.6 Voltage-switching configuration with reactive load | p. 107 |
2.7 Drive and transition time | p. 111 |
2.8 Practical Class-D power amplifier implementation | p. 118 |
2.9 Class D for digital pulse-modulation transmitters | p. 123 |
References | p. 127 |
Chapter 3 Class-F Power Amplifiers | p. 129 |
3.1 Biharmonic and polyharmonic operation modes | p. 129 |
3.2 Idealized Class-F mode | p. 139 |
3.3 Class-F with maximally flat waveforms | p. 143 |
3.4 Class-F with quarterwave transmission line | p. 151 |
3.5 Effect of saturation resistance and shunt capacitance | p. 157 |
3.6 Load networks with lumped elements | p. 162 |
3.7 Load networks with transmission lines | p. 169 |
3.8 LDMOSFET power amplifier design examples | p. 176 |
3.9 Broadband capability of Class-F power amplifiers | p. 181 |
3.10 Practical Class-F power amplifiers and applications | p. 183 |
References | p. 190 |
Chapter 4 Inverse Class-F | p. 195 |
4.1 Biharmonic and polyharmonic operation modes | p. 195 |
4.2 Idealized inverse Class-F mode | p. 202 |
4.3 Inverse Class-F with quarterwave transmission line | p. 205 |
4.4 Load networks with lumped elements | p. 208 |
4.5 Load networks with transmission lines | p. 212 |
4.6 LDMOSFET power amplifier design examples | p. 222 |
4.7 Examples of practical implementation | p. 226 |
4.8 Inverse Class-F GaN HEMT power amplifiers for WCDMA systems | p. 231 |
References | p. 242 |
Chapter 5 Class-E with Shunt Capacitance | p. 245 |
5.1 Effect of a detuned resonant circuit | p. 245 |
5.2 Load network with shunt capacitor and series filter | p. 250 |
5.3 Matching with a standard load | p. 256 |
5.4 Effect of saturation resistance | p. 260 |
5.5 Driving signal and finite switching time | p. 263 |
5.6 Effect of nonlinear shunt capacitance | p. 270 |
5.7 Optimum, nominal, and off-nominal Class-E operation | p. 272 |
5.8 Push-pull operation mode | p. 277 |
5.9 Load networks with transmission lines | p. 281 |
5.10 Practical Class-E power amplifiers and applications | p. 291 |
References | p. 300 |
Chapter 6 Class-E with Finite DC-Feed Inductance | p. 305 |
6.1 Class-E with one capacitor and one inductor | p. 305 |
6.2 Generalized Class-E load network with finite DC-Feed inductance | p. 313 |
6.3 Subharmonic Class-E | p. 320 |
6.4 Parallel-circuit Class-E | p. 324 |
6.5 Even-harmonic Class-E | p. 330 |
6.6 Effect of bondwire inductance | p. 332 |
6.7 Load network with transmission lines | p. 333 |
6.8 Operation beyond maximum Class-E frequency | p. 340 |
6.9 Power gain | p. 345 |
6.10 CMOS Class-E power amplifiers | p. 348 |
References | p. 354 |
Chapter 7 Class-E with Quarterwave Transmission Line | p. 357 |
7.1 Load network with parallel quarterwave line | p. 357 |
7.2 Optimum load-network parameters | p. 364 |
7.3 Load network with zero series reactance | p. 367 |
7.4 Matching circuit with lumped elements | p. 372 |
7.5 Matching circuit with transmission lines | p. 373 |
7.6 Load network with series quarterwave line and shunt filter | p. 376 |
7.7 Design example: 10-W, 2.14-GHz Class-E GaN HEMT power amplifier with parallel quarterwave transmission line | p. 378 |
References | p. 385 |
Chapter 8 Broadband Class-E | p. 387 |
8.1 Reactance compensation technique | p. 387 |
8.1.1 Load networks with lumped elements | p. 388 |
8.1.2 Load networks with transmission lines | p. 394 |
8.2 Broadband Class-E with shunt capacitance | p. 400 |
8.3 Broadband parallel-circuit Class-E | p. 409 |
8.4 High-power RF Class-E power amplifiers | p. 416 |
8.5 Microwave monolithic Class-E power amplifiers | p. 419 |
8.6 CMOS Class-E power amplifiers | p. 424 |
References | p. 426 |
Chapter 9 Alternative and Mixed-Mode High-Efficiency Power Amplifiers | p. 429 |
9.1 Class-DE power amplifier | p. 430 |
9.2 Class-FE power amplifiers | p. 444 |
9.3 Class-E/F power amplifiers | p. 462 |
9.3.1 Symmetrical push-pull configurations | p. 465 |
9.3.2 Single-ended Class-E/F 3 mode | p. 471 |
9.4 Biharmonic Class-E M power amplifier | p. 488 |
9.5 Inverse Class-E M power amplifiers | p. 495 |
9.6 Harmonic tuning using load-pull techniques | p. 503 |
9.7 Chireix outphasing power amplifiers | p. 512 |
References | p. 524 |
Chapter 10 High-Efficiency Doherty Power Amplifiers | p. 529 |
10.1 Historical aspects and conventional Doherty architecture | p. 529 |
10.2 Carrier and peaking amplifiers with harmonic control | p. 540 |
10.3 Balanced, push-pull, and dual Doherty amplifiers | p. 543 |
10.4 Asymmetric Doherty amplifiers | p. 546 |
10.5 Multistage Doherty amplifiers | p. 550 |
10.6 Inverted Doherty amplifiers | p. 556 |
10.7 Integration | p. 559 |
10.8 Digitally driven Doherty amplifier | p. 562 |
10.9 Multiband and broadband capability | p. 564 |
References | p. 568 |
Chapter 11 Predistortion Linearization Techniques | p. 575 |
11.1 Modeling of RF power amplifiers with memory | p. 576 |
11.2 Predistortion linearization | p. 582 |
11.2.1 Introduction | p. 582 |
11.2.2 Memoryless predistorter for octave-bandwidth amplifiers | p. 584 |
11.2.3 Predistorter with memory for octave-bandwidth amplifiers | p. 589 |
11.2.4 Postdistortion | p. 590 |
11.3 Analog predistortion implementation | p. 591 |
11.3.1 Introduction | p. 591 |
11.3.2 Reflective predistorters | p. 591 |
11.3.3 Transmissive predistorters | p. 593 |
11.4 Digital predistortion implementation | p. 598 |
11.4.1 Introduction | p. 598 |
11.4.2 Principles of memoryless digital predistortion | p. 598 |
11.4.3 Digital predistortion adaptation | p. 601 |
11.4.4 Digital predistorter performance | p. 603 |
References | p. 604 |
Chapter 12 Computer-Aided Design of Switchmode Power Amplifiers | p. 607 |
12.1 HB-PLUS program for half-bridge and full-bridge direct-coupled voltage-switching Class-D and Class-DE circuits | p. 608 |
12.1.1 Program capabilities | p. 608 |
12.1.2 Circuit topologies | p. 609 |
12.1.3 Class-D versus Class-DE | p. 611 |
12.2 HEPA-PLUS CAD program for Class-E | p. 613 |
12.2.1 Program capabilities | p. 613 |
12.2.2 Steady-state periodic response | p. 614 |
12.2.3 Transient response | p. 614 |
12.2.4 Circuit topology | p. 614 |
12.2.5 Optimization | p. 615 |
12.3 Effect of Class-E load-network parameter variations | p. 616 |
12.4 HB-PLUS CAD examples for Class-D and Class-DE | p. 619 |
12.4.1 Class-D with hard switching | p. 620 |
12.4.2 Class-DE with soft switching | p. 623 |
12.5 HEPA-PLUS CAD example for Class-E | p. 626 |
12.5.1 Evaluate a candidate transistor | p. 626 |
12.5.2 Use the automatic preliminary design module to obtain a nominal-waveform Class-E design | p. 627 |
12.5.3 Simulate the nominal-waveforms circuit | p. 629 |
12.5.4 RF output spectrum | p. 629 |
12.5.5 Optimize the design, using the nominal-waveforms design as a starting-point | p. 631 |
12.5.6 Use the SWEEP function | p. 635 |
12.6 Class-E power amplifier design using SPICE | p. 638 |
12.7 ADS circuit simulator and its applicability to switchmode Class-E | p. 644 |
12.8 ADS CAD design example: high-efficiency two-stage 1.75-GHz MMIC HBT power amplifier | p. 649 |
References | p. 668 |
Index | p. 669 |