Cover image for Switchmode RF and microwave power amplifiers
Title:
Switchmode RF and microwave power amplifiers
Personal Author:
Edition:
2nd ed.
Publication Information:
Amsterdam ; London : Elsevier ; Oxford : Academic Press, 2012
Physical Description:
xxi, 677 p. : ill. ; 25 cm
ISBN:
9780124159075
General Note:
Original ed. published as: Switchmode RF power amplifiers / Andrei Grebennikov, Nathan O. Sokal. Amsterdam ; London : Elsevier ; Burlington, Mass. ; Oxford : Newnes, c2007.

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30000010322094 TK7871.58.P6 G75 2012 Open Access Book Book
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Summary

Summary

Combining solid theoretical discussions with practical design examples, this book is an essential reference on developing RF and microwave switchmode power amplifiers.

With this book you will be able to:

Design high-efficiency RF and microwave power amplifiers on different types of bipolar and field-effect transistors using well-known and novel theoretical approaches, nonlinear simulation tools, and practical design techniques Design any type of high-efficiency switchmode power amplifiers operating in Class D or E at lower frequencies and in Class E or F and their subclasses at microwave frequencies, with specified output power Understand the theory and practical implementation of load-network design techniques based on lumped and transmission-line elements Combine multi-stage Doherty architecture and switchmode power amplifiers to significantly increase efficiency of the entire radio transmitter Learn the different types of predistortion linearization techniques required to improve the quality of signal transmission in a nonlinear amplifying system

New to this edition:

Comprehensive overview of different Doherty architectures which are, and will be used in modern communication systems to save power consumption and reduce costs A new chapter on analog and digital predistortion techniques Coverage of broadband Class-F power amplifiers, high-power inverse Class-F power amplifiers for WCDMA systems, broadband Class-E techniques


Author Notes

Dr. Andrei Grebennikov is a Senior Member of the IEEE and a Member of Editorial Board of the International Journal of RF and Microwave Computer-Aided Engineering. He received his Dipl. Ing. degree in radio electronics from the Moscow Institute of Physics and Technology and Ph.D. degree in radio engineering from the Moscow Technical University of Communications and Informatics in 1980 and 1991, respectively.

He has obtained a long-term academic and industrial experience working with the Moscow Technical University of Communications and Informatics, Russia, Institute of Microelectronics, Singapore, M/A-COM, Ireland, Infineon Technologies, Germany/Austria, and Bell Labs, Alcatel-Lucent, Ireland, as an engineer, researcher, lecturer, and educator.

He lectured as a Guest Professor in the University of Linz, Austria, and presented short courses and tutorials as an Invited Speaker at the International Microwave Symposium, European and Asia-Pacific Microwave Conferences, Institute of Microelectronics, Singapore, and Motorola Design Centre, Malaysia. He is an author or co-author of more than 80 technical papers, 5 books, and 15 European and US patents.

In 1989, Mr. Sokal was elected a Fellow of the IEEE, for his contributions to the technology of high-efficiency switching-mode power conversion and switching-mode RF power amplification. In 2007, he received the Microwave Pioneer award from the IEEE Microwave Theory and Techniques Society, in recognition of a major, lasting, contribution ? development of the Class-E RF power amplifier. In 2011, he was awarded an honorary doctorate from the Polytechnic University of Madrid, Spain, for developing the high-efficiency switching-mode Class-E RF power amplifier

In 1965, he founded Design Automation, Inc., a consulting company doing electronics design review, product design, and solving ''unsolvable'' problems for equipment-manufacturing clients. Much of that work has been on high-efficiency switching-mode RF power amplifiers at frequencies up to 2.5 GHz, and switching-mode dc-dc power converters. He holds eight patents in power electronics, and is the author or co-author of two books and approximately 130 technical papers, mostly on high-efficiency generation of RF power and dc power.

During 1950-1965, he held engineering and supervisory positions for design, manufacture, and applications of analog and digital equipment.

He received B.S. and M.S. degrees in Electrical Engineering from the Massachusetts Institute of Technology, Cambridge, Massachusetts, in 1950.

He is a Technical Adviser to the American Radio Relay League, on RF power amplifiers and dc power supplies, and a member of the Electromagnetics Society, Eta Kappa Nu, and Sigma Xi honorary professional societies.

Marc J. Franco holds a Ph.D. degree in electrical engineering from Drexel University, Philadelphia. He is currently with RFMD, Technology Platforms, Component Advanced Development, Greensboro, North Carolina, USA, where he is involved with the design of advanced RF integrated circuits and integrated front-end modules. He was previously with Linearizer Technology, Inc. Hamilton, New Jersey, where he led the development of advanced RF products for commercial, military and space applications.

Dr. Franco is a regular reviewer for the Radio & Wireless Symposium, the European Microwave Conference and the MTT International Microwave Symposium. He is a member of the MTT-17 HF-VHF-UHF Technology Technical Coordination Committee and has co-chaired the IEEE Topical Conference on Power Amplifiers for Radio and Wireless Applications. He is a Senior Member of the IEEE.

His current research interests include high-efficiency RF power amplifiers, nonlinear distortion correction, and electromagnetic analysis of structures.


Table of Contents

About the Authorsp. xi
Forewordp. xiii
Prefacep. xv
Acknowledgmentsp. xxi
Chapter 1 Power Amplifier Design Principlesp. 1
1.1 Spectral-domain analysisp. 1
1.2 Basic classes of operation: A, AB, B, and Cp. 7
1.3 Load line and output impedancep. 13
1.4 Classes of operation based upon a finite number of harmonicsp. 17
1.5 Active device modelsp. 20
1.5.1 LDMOSFETsp. 20
1.5.2 GaAs MESFETs and GaN HEMTsp. 24
1.5.3 Low- and high-voltage HBTsp. 29
1.6 High-frequency conduction anglep. 32
1.7 Nonlinear effect of collector capacitancep. 38
1.8 Push-pull power amplifiersp. 42
1.9 Power gain and impedance matchingp. 47
1.10 Load-pull characterizationp. 52
1.11 Amplifier stabilityp. 54
1.12 Parametric oscillationsp. 62
1.13 Bias circuitsp. 67
1.14 Distortion fundamentalsp. 72
1.14.1 Linearityp. 72
1.14.2 Time variancep. 73
1.14.3 Memoryp. 73
1.14.4 Distortion of electrical signalsp. 73
1.14.5 Types of distortionp. 74
1.14.6 Nonlinear distortion analysis for sinusoidal signals - measures of nonlinear distortionp. 75
Referencesp. 78
Chapter 2 Class-D Power Amplifiersp. 83
2.1 Switchmode power amplifiers with resistive loadp. 83
2.2 Complementary voltage-switching configurationp. 92
2.3 Transformer-coupled voltage-switching configurationp. 97
2.4 Transformer-coupled current-switching configurationp. 99
2.5 Symmetrical current-switching configurationp. 103
2.6 Voltage-switching configuration with reactive loadp. 107
2.7 Drive and transition timep. 111
2.8 Practical Class-D power amplifier implementationp. 118
2.9 Class D for digital pulse-modulation transmittersp. 123
Referencesp. 127
Chapter 3 Class-F Power Amplifiersp. 129
3.1 Biharmonic and polyharmonic operation modesp. 129
3.2 Idealized Class-F modep. 139
3.3 Class-F with maximally flat waveformsp. 143
3.4 Class-F with quarterwave transmission linep. 151
3.5 Effect of saturation resistance and shunt capacitancep. 157
3.6 Load networks with lumped elementsp. 162
3.7 Load networks with transmission linesp. 169
3.8 LDMOSFET power amplifier design examplesp. 176
3.9 Broadband capability of Class-F power amplifiersp. 181
3.10 Practical Class-F power amplifiers and applicationsp. 183
Referencesp. 190
Chapter 4 Inverse Class-Fp. 195
4.1 Biharmonic and polyharmonic operation modesp. 195
4.2 Idealized inverse Class-F modep. 202
4.3 Inverse Class-F with quarterwave transmission linep. 205
4.4 Load networks with lumped elementsp. 208
4.5 Load networks with transmission linesp. 212
4.6 LDMOSFET power amplifier design examplesp. 222
4.7 Examples of practical implementationp. 226
4.8 Inverse Class-F GaN HEMT power amplifiers for WCDMA systemsp. 231
Referencesp. 242
Chapter 5 Class-E with Shunt Capacitancep. 245
5.1 Effect of a detuned resonant circuitp. 245
5.2 Load network with shunt capacitor and series filterp. 250
5.3 Matching with a standard loadp. 256
5.4 Effect of saturation resistancep. 260
5.5 Driving signal and finite switching timep. 263
5.6 Effect of nonlinear shunt capacitancep. 270
5.7 Optimum, nominal, and off-nominal Class-E operationp. 272
5.8 Push-pull operation modep. 277
5.9 Load networks with transmission linesp. 281
5.10 Practical Class-E power amplifiers and applicationsp. 291
Referencesp. 300
Chapter 6 Class-E with Finite DC-Feed Inductancep. 305
6.1 Class-E with one capacitor and one inductorp. 305
6.2 Generalized Class-E load network with finite DC-Feed inductancep. 313
6.3 Subharmonic Class-Ep. 320
6.4 Parallel-circuit Class-Ep. 324
6.5 Even-harmonic Class-Ep. 330
6.6 Effect of bondwire inductancep. 332
6.7 Load network with transmission linesp. 333
6.8 Operation beyond maximum Class-E frequencyp. 340
6.9 Power gainp. 345
6.10 CMOS Class-E power amplifiersp. 348
Referencesp. 354
Chapter 7 Class-E with Quarterwave Transmission Linep. 357
7.1 Load network with parallel quarterwave linep. 357
7.2 Optimum load-network parametersp. 364
7.3 Load network with zero series reactancep. 367
7.4 Matching circuit with lumped elementsp. 372
7.5 Matching circuit with transmission linesp. 373
7.6 Load network with series quarterwave line and shunt filterp. 376
7.7 Design example: 10-W, 2.14-GHz Class-E GaN HEMT power amplifier with parallel quarterwave transmission linep. 378
Referencesp. 385
Chapter 8 Broadband Class-Ep. 387
8.1 Reactance compensation techniquep. 387
8.1.1 Load networks with lumped elementsp. 388
8.1.2 Load networks with transmission linesp. 394
8.2 Broadband Class-E with shunt capacitancep. 400
8.3 Broadband parallel-circuit Class-Ep. 409
8.4 High-power RF Class-E power amplifiersp. 416
8.5 Microwave monolithic Class-E power amplifiersp. 419
8.6 CMOS Class-E power amplifiersp. 424
Referencesp. 426
Chapter 9 Alternative and Mixed-Mode High-Efficiency Power Amplifiersp. 429
9.1 Class-DE power amplifierp. 430
9.2 Class-FE power amplifiersp. 444
9.3 Class-E/F power amplifiersp. 462
9.3.1 Symmetrical push-pull configurationsp. 465
9.3.2 Single-ended Class-E/F 3 modep. 471
9.4 Biharmonic Class-E M power amplifierp. 488
9.5 Inverse Class-E M power amplifiersp. 495
9.6 Harmonic tuning using load-pull techniquesp. 503
9.7 Chireix outphasing power amplifiersp. 512
Referencesp. 524
Chapter 10 High-Efficiency Doherty Power Amplifiersp. 529
10.1 Historical aspects and conventional Doherty architecturep. 529
10.2 Carrier and peaking amplifiers with harmonic controlp. 540
10.3 Balanced, push-pull, and dual Doherty amplifiersp. 543
10.4 Asymmetric Doherty amplifiersp. 546
10.5 Multistage Doherty amplifiersp. 550
10.6 Inverted Doherty amplifiersp. 556
10.7 Integrationp. 559
10.8 Digitally driven Doherty amplifierp. 562
10.9 Multiband and broadband capabilityp. 564
Referencesp. 568
Chapter 11 Predistortion Linearization Techniquesp. 575
11.1 Modeling of RF power amplifiers with memoryp. 576
11.2 Predistortion linearizationp. 582
11.2.1 Introductionp. 582
11.2.2 Memoryless predistorter for octave-bandwidth amplifiersp. 584
11.2.3 Predistorter with memory for octave-bandwidth amplifiersp. 589
11.2.4 Postdistortionp. 590
11.3 Analog predistortion implementationp. 591
11.3.1 Introductionp. 591
11.3.2 Reflective predistortersp. 591
11.3.3 Transmissive predistortersp. 593
11.4 Digital predistortion implementationp. 598
11.4.1 Introductionp. 598
11.4.2 Principles of memoryless digital predistortionp. 598
11.4.3 Digital predistortion adaptationp. 601
11.4.4 Digital predistorter performancep. 603
Referencesp. 604
Chapter 12 Computer-Aided Design of Switchmode Power Amplifiersp. 607
12.1 HB-PLUS program for half-bridge and full-bridge direct-coupled voltage-switching Class-D and Class-DE circuitsp. 608
12.1.1 Program capabilitiesp. 608
12.1.2 Circuit topologiesp. 609
12.1.3 Class-D versus Class-DEp. 611
12.2 HEPA-PLUS CAD program for Class-Ep. 613
12.2.1 Program capabilitiesp. 613
12.2.2 Steady-state periodic responsep. 614
12.2.3 Transient responsep. 614
12.2.4 Circuit topologyp. 614
12.2.5 Optimizationp. 615
12.3 Effect of Class-E load-network parameter variationsp. 616
12.4 HB-PLUS CAD examples for Class-D and Class-DEp. 619
12.4.1 Class-D with hard switchingp. 620
12.4.2 Class-DE with soft switchingp. 623
12.5 HEPA-PLUS CAD example for Class-Ep. 626
12.5.1 Evaluate a candidate transistorp. 626
12.5.2 Use the automatic preliminary design module to obtain a nominal-waveform Class-E designp. 627
12.5.3 Simulate the nominal-waveforms circuitp. 629
12.5.4 RF output spectrump. 629
12.5.5 Optimize the design, using the nominal-waveforms design as a starting-pointp. 631
12.5.6 Use the SWEEP functionp. 635
12.6 Class-E power amplifier design using SPICEp. 638
12.7 ADS circuit simulator and its applicability to switchmode Class-Ep. 644
12.8 ADS CAD design example: high-efficiency two-stage 1.75-GHz MMIC HBT power amplifierp. 649
Referencesp. 668
Indexp. 669