Rf and microwave semiconductor device handbook

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Publication Information:

Boca Raton, Fla. : CRC Press, 2003

ISBN:

9780849315626

Subject Term:

Microwave devices -- Handbooks, manuals, etc.

Semiconductors -- Handbooks, manuals, etc.

Very high speed integrated circuits -- Handbooks, manuals, etc.

Added Author:

Golio, J. Michael

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Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010029211	TK7876 R49 2003	Open Access Book	Book	Searching... Unknown

Offering a single volume reference for high frequency semiconductor devices, this handbook covers basic material characteristics, system level concerns and constraints, simulation and modeling of devices, and packaging. Individual chapters detail the properties and characteristics of each semiconductor device type, including: Varactors, Schottky diodes, transit-time devices, BJTs, HBTs, MOSFETs, MESFETs, and HEMTs. Written by leading researchers in the field, the RF and Microwave Semiconductor Device Handbook provides an excellent starting point for programs involving development, technology comparison, or acquisition of RF and wireless semiconductor devices.

Reviews 1

Choice Review

RF and microwave semiconductors are the devices that have powered the telecommunications revolution. A team of 20 authors drawn from industry and academia, under the leadership of Golio of Motorola, has composed this 17-chapter, 310-page handbook. Some chapters are devoted to technologies that are well established, others to those more recently emerging. Chapter 7, "Metal Semiconductor Field Effect Transistors" (MESFETs), is an example of the first kind. Section headings include "Introduction," "Principle of Operation," "Properties of Semiconductor Materials used in MESFET Technology," "Schottky Barrier Contacts," "MESFET Technology," "MESFET Modeling," "Hetero-Dimensional (2D MESFETs)," "Applications," and a 72-item bibliography. Chapter 8, "High Electron Mobility Transistors" (HEMTs), is an example of the second type of chapter, with sections labeled "Introduction," "HEMT Device Operation and Design," "Scaling Issues in Ultra-High Speed HEMTs," "Material Systems for HEMT Devices," "AlGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAa pHEMT)," "AlInAs/GaInAs/InP (InP HEMT)," "Technology Comparisons," "Conclusions," and a 116-item bibliography. Layout, typography, and particularly the diagrams are exceptionally good. For practicing engineers in industry, government, and academia. ^BSumming Up: Upper-division undergraduates through professionals. G. Weiss emeritus, Polytechnic University

1 VaractorsJan Stake
1.1 Introduction	p. 1
1.2 Basic Concepts	p. 1
1.3 Varactor Applications	p. 5
1.4 Varactor Devices	p. 10
2 Schottky Diode Frequency MultipliersJack East
2.1 Introduction	p. 1
2.2 Schottky Diode Characteristics	p. 2
2.3 Analytic Descriptions of Diode Multipliers	p. 4
2.4 Computer-Based Design Approaches	p. 4
2.5 Device Limitations and Alternative Device Structures	p. 7
2.6 Summary and Conclusions	p. 10
3 Transit Time Microwave DevicesRobert J. Trew
3.1 Introduction	p. 1
3.2 Semiconductor Material Properties	p. 1
3.3 Two-Terminal Active Microwave Devices	p. 3
Defining Terms	p. 10
4 Bipolar Junction TransistorsJohn C. Cowles
4.1 Introduction	p. 1
4.2 Basic Operation	p. 2
5 Heterostructure Bipolar TransistorsWilliam Liu
5.1 Basic Device Principle	p. 1
5.2 Base Current Components	p. 7
5.3 Kirk Effects	p. 12
5.4 Collapse of Current Gain	p. 14
5.5 High Frequency Performance	p. 16
5.6 Device Fabrication	p. 20
6 Metal-Oxide-Semiconductor Field-Effect TransistorsLeonard MacEachern and Tajinder Manku
6.1 Introduction	p. 1
6.2 MOSFET Fundamentals	p. 2
6.3 CMOS at Radio Frequencies	p. 10
6.4 MOSFET Noise Sources	p. 20
6.5 MOSFET Design for RF Operation	p. 24
6.6 MOSFET Layout	p. 27
6.7 The Future of CMOS	p. 28
7 Metal Semiconductor Field Effect TransistorsMichael S. Shur
7.1 Introduction	p. 1
7.2 Principle of Operation	p. 2
7.3 Properties of Semiconductor Materials Used in MESFET Technology	p. 4
7.4 Schottky Barrier Contacts	p. 5
7.5 MESFET Technology	p. 9
7.6 MESFET Modeling	p. 12
7.7 Hetero-Dimensional (2D MESFETs)	p. 16
7.8 Applications	p. 20
8 High Electron Mobility TransistorsPrashant Chavarkar and Umesh K. Mishra
8.1 Introduction	p. 1
8.2 HEMT Device Operation and Design	p. 2
8.3 Scaling Issues in Ultra-High-Speed HEMTs	p. 8
8.4 Material Systems for HEMT Devices	p. 11
8.5 AlGaAs/InGaAs/GaAs Pseudomorphic HEMT (GaAs pHEMT)	p. 13
8.6 AlInAs/GaInAs/InP (InP HEMT)	p. 18
8.7 Technology Comparisons	p. 22
8.8 Conclusion	p. 24
9 RF Power Transistors from Wide Bandgap MaterialsKaren E. Moore
9.1 Introduction	p. 1
9.2 Figures of Merit for RF Power Transistors	p. 2
9.3 Common RF Power Devices from Wide Bandgap Materials	p. 3
9.4 Desirable Material Properties for RF Power Transistors	p. 7
9.5 State-of-the-Art Wide Bandgap Microwave Transistor Data	p. 10
9.6 Challenges to Production	p. 12
9.7 Conclusion	p. 14
10 Monolithic Microwave IC TechnologyLawrence P. Dunleavy
10.1 Overview	p. 1
10.2 Basic Principles of GaAs MESFETs and HEMTs	p. 7
10.3 MMIC Lumped Elements: Resistors, Capacitors, and Inductors	p. 12
10.4 MMIC Processing and Mask Sets	p. 14
Defining Terms	p. 15
11 SemiconductorsMike Harris
11.1 Introduction	p. 1
11.2 Silicon	p. 2
11.3 Gallium Arsenide	p. 2
11.4 III-V Heterostructures	p. 7
11.5 Indium Phosphide	p. 8
11.6 Silicon Carbide	p. 9
11.7 Gallium Nitride	p. 11
11.8 Selected Material Properties	p. 13
11.9 Etching Processes for Semiconductors	p. 13
11.10 Ohmic and Schottky Contacts	p. 14
12 MetalsMike Golio
12.1 Introduction	p. 1
12.2 Resistance, Resistivity, and Conductivity	p. 1
12.3 Skin Depth	p. 2
12.4 Heat Conduction	p. 3
12.5 Temperature Expansion	p. 4
12.6 Chemical Properties	p. 5
12.7 Weight	p. 6
13 RF Package Design and DevelopmentJeanne S. Pavio
13.1 Introduction	p. 1
13.2 Thermal Management	p. 2
13.3 Mechanical Design	p. 4
13.4 Package Electrical and Electromagnetic Modeling	p. 6
13.5 Design Verification, Materials, and Reliability Testing	p. 7
13.6 Computer-Integrated Manufacturing	p. 8
13.7 Conclusions	p. 9
14 Thermal Analysis and Design of Electronic SystemsAvram Bar-Cohen and Karl J. Geisler and Allan D. Kraus
14.1 Motivation	p. 1
14.2 Thermal Modeling	p. 4
14.3 Thermal Resistance Networks	p. 20
15 Low Voltage/Low Power Microwave ElectronicsMike Golio
15.1 Introduction	p. 1
15.2 Motivations for Reduced Voltage	p. 2
15.3 Semiconductor Materials Technology	p. 3
15.4 Semiconductor Device Technology	p. 4
15.5 Circuit Design	p. 7
15.6 Radio and System Architecture	p. 8
15.7 Limits to Reductions in Voltage	p. 9
15.8 Summary	p. 10
16 Technology Computer Aided DesignPeter A. Blakey
16.1 Introduction	p. 1
16.2 An Overview of TCAD	p. 1
16.3 Benefits of TCAD	p. 3
16.4 Limitations of TCAD	p. 4
16.5 The Role of Calibration	p. 4
16.6 Applications of TCAD	p. 5
16.7 Application Protocols	p. 8
16.8 Conclusions	p. 9
17 Nonlinear Transistor Modeling for Circuit SimulationWalter R. Curtice
17.1 Modeling in General	p. 1
17.2 Scope of This Work	p. 4
17.3 Equivalent Circuit Models	p. 4
17.4 Spice Models and Application-Specific Models	p. 6
17.5 Improved Transistor Models for Circuit Simulation	p. 7
17.6 Modeling Gate Charge as a Function of Local and Remote Voltages in MESFETS and PHEMTS	p. 8
17.7 Modeling the Effects Due to Traps	p. 9
17.8 Modeling Temperature Effects and Self-Heating	p. 10
17.9 Enhancing the Gummel-Poon Model for Use with GaAs and InP HBTs	p. 12
17.10 Modeling the RF LDMOS Power Transistor	p. 15
17.11 Parameter Extraction for Analytical Models	p. 15
17.12 The Vector Nonlinear Network Analyzer	p. 16
17.13 Model Verification	p. 17
17.14 Foundry Models and Statistics	p. 17
17.15 Future Nonlinear Transistor Models	p. 17
Index	p. 1

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