High-power GaAs FET amplifiers

Select an Action

Place Hold(s)
Add to My Lists
Email
Print

Title:

Personal Author:

Walker, John L. B.

Publication Information:

Norwood, MA : Artech House, 1993

ISBN:

9780890064795

Subject Term:

Power amplifiers

Metal semiconductor field-effect transistors

Gallium arsenide semiconductors

Microwave integrated circuits

Available:*

Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000002859985	TK7871.58.P6 W25 1993	Open Access Book	Book	Searching... Unknown

This book is intended for systems engineers, hybrid and monolithic power amplifier designers, engineers involved in the development of CAD programs, academics, and industrial and goverment researchers. The book is devoted exclusively to high power GaAs FET amplifier design, covering the subject comprehensively, including FET design, circuit design, thermal and reliability analysis, and systems applications.

Preface	p. xi
Chapter 1 Introduction and Basic Theory	p. 1
1.1 Introduction	p. 1
1.2 Analysis of Ideal GaAs FET Class A and B Amplifiers	p. 3
1.2.1 Device Physics Versus Circuit Design Viewpoint	p. 3
1.2.2 Class A Amplifiers	p. 4
1.2.3 Single-Ended Class B Amplifiers With Resistive Load	p. 11
1.2.4 Single-Ended Class B Amplifiers With Tuned Load	p. 15
1.2.5 Push-Pull Class B Amplifiers	p. 18
1.2.6 Comparison of the Various Types of Power Amplifiers	p. 21
1.2.7 Validity of the Preceding Analysis	p. 21
1.3 The Concept of Power per Millimeter of Gatewidth	p. 23
1.4 Small-Signal (Linear) and Large-Signal (Nonlinear) Models for an FET	p. 24
1.5 Overview of Design Techniques	p. 30
1.6 Bandwidth Limitations of Reactively Matched Amplifiers	p. 35
1.6.1 Output Matching Network	p. 35
1.6.2 Input Matching Network	p. 38
References	p. 40
Chapter 2 High-Power GaAs FETs	p. 43
2.1 Introduction	p. 43
2.1.1 The Development of the High-Power GaAs FET	p. 43
2.1.2 Current Technology for the High-Power GaAs FET	p. 45
2.2 High-Power FET Design: FET Channel Cross-Section Design	p. 48
2.2.1 The Flow of the Design Process	p. 48
2.2.2 Designing the Epitaxial Wafer Structure	p. 50
2.2.3 Determination of the Gate Length	p. 56
2.2.4 The Scaling Law	p. 58
2.2.5 Breakdown Voltage and Recess Structure	p. 66
2.2.6 Parasitic Resistance	p. 72
2.2.7 Equivalent Circuits	p. 74
2.3 High-Power FET Design: FET Pattern Design	p. 77
2.3.1 The Flow of the Design Process	p. 77
2.3.2 Output Power and Total Gatewidth	p. 77
2.3.3 Determination of the Unit Gatewidth	p. 80
2.3.4 Chip Size	p. 83
2.3.5 Determination of the Number of Pads	p. 84
2.3.6 Pattern Layout	p. 87
2.3.7 Chip Backside Structure	p. 90
2.4 Thermal Properties	p. 94
2.5 Manufacturing	p. 97
2.5.1 Epitaxial Wafer Growth	p. 97
2.5.2 Flow of the Wafer Manufacturing Process	p. 103
2.5.3 Isolation	p. 103
2.5.4 Ohmic Electrode Formation	p. 105
2.5.5 Gate Electrode Formation	p. 108
2.5.6 Protective Layers	p. 111
2.5.7 Overlay Wiring	p. 112
2.5.8 Backside Processing and Via-Hole Connections	p. 112
2.6 Evaluation	p. 113
2.6.1 Evaluation of dc Characteristics	p. 113
2.6.2 Output Power Measurement	p. 114
2.6.3 Measurement of Distortion Features	p. 118
2.6.4 Impedance Measurement and Load-Pull Measurement	p. 120
2.7 Current FETs	p. 123
2.7.1 Standard FET Chips	p. 123
2.7.2 Internally Matched FETs	p. 128
2.7.3 MMIC Power Amplifiers	p. 134
2.8 Trends in Technology	p. 136
2.8.1 Material Technology: The InP MISFET	p. 137
2.8.2 The Heterojunction FET: HEMT and Heterostructure MISFET	p. 139
2.8.3 The Heterojunction Bipolar Transistor	p. 141
2.9 Conclusion	p. 142
References	p. 143
Chapter 3 Computer-Aided Design of GaAs FET Power Amplifiers	p. 147
3.1 Introduction	p. 147
3.2 GaAs FET Nonlinear Models	p. 148
3.2.1 The MESFET Large-Signal RF Equivalent Circuit	p. 149
3.2.2 The MESFET Static dc Model	p. 162
3.2.3 General Guidelines for Large-Signal Model Extraction	p. 172
3.3 A Large-Signal Amplifier Simulation	p. 173
3.3.1 The FLK202XV Large-Signal Model	p. 173
3.3.2 Simulation of the 3.7- to 4.2-GHz, 1-W Class AB Amplifier	p. 174
References	p. 188
Chapter 4 High-Power GaAs FET Amplifier Design	p. 189
4.1 Introduction	p. 189
4.2 Budgeting Transmitting Chain RF Performance	p. 189
4.3 Performance Characterization and Modeling	p. 192
4.3.1 Pulsed RF Testing	p. 192
4.3.2 Bias Points and Class of Operation	p. 194
4.3.3 Small-Signal Modeling	p. 195
4.4 Design Techniques	p. 198
4.4.1 Load-Pull	p. 198
4.4.2 Nonlinear CAD	p. 199
4.4.3 Modified Cripps Method	p. 199
4.5 Scaling	p. 204
4.6 Matching Network Design	p. 208
4.6.1 Output and Interstage Network Load Line Analysis	p. 209
4.6.2 Harmonic Termination Effects	p. 210
4.6.3 Stability Considerations	p. 212
4.7 Thermal Considerations	p. 212
4.8 Gate Current and Insertion Phase	p. 215
4.9 Dual-Gate FET Power Amplifier	p. 216
References	p. 225
Chapter 5 Thermal Effects and Reliability	p. 227
5.1 Introduction	p. 227
5.2 Thermal Fundamentals	p. 228
5.3 Thermal Calculations for Practical FETs	p. 229
5.4 Pulsed Operation	p. 240
5.5 Measurement of Thermal Resistance and Channel Temperature	p. 243
5.6 Reliability	p. 248
5.6.1 Failure Mechanisms	p. 248
5.6.2 Reliability Statistics	p. 250
5.6.3 Reliability Testing	p. 257
5.7 Conclusion	p. 260
References	p. 260
Chapter 6 Combining Techniques	p. 263
6.1 Introduction	p. 263
6.2 Distributed Amplifier Power Combining	p. 264
6.2.1 Small-Signal Analysis	p. 264
6.2.2 Effect of Resistive Terminations and Loss Within the FET on Small-Signal Analysis	p. 271
6.2.3 Large-Signal Analysis	p. 275
6.3 Passive Power Combining/Dividing Networks	p. 281
6.3.1 Two-Way In-Phase Power Combiner/Divider Networks	p. 282
6.3.2 Two-Way Quadrature-Phase Power Combiner/Divider Networks	p. 285
6.3.3 N-Way Power Combiner/Divider Networks	p. 289
6.4 Power Combining Methods	p. 292
6.4.1 Corporate Power Combining	p. 292
6.4.2 Serial Power Combining	p. 302
6.4.3 N-Way Power Combining	p. 305
Appendix 6A	p. 307
References	p. 311
Chapter 7 Systems Applications of GaAs FET Power Amplifiers	p. 315
7.1 Introduction	p. 315
7.2 Satellite Applications	p. 316
7.2.1 Reliability	p. 316
7.2.2 Active Phased Arrays	p. 317
7.2.3 Power Combined Amplifiers	p. 319
7.2.4 Mobile Tactical	p. 321
7.2.5 Earth Terminals	p. 328
7.3 Terrestrial Telecommunications	p. 331
7.3.1 Line-of-Sight Links	p. 332
7.3.2 Linearized Amplifiers	p. 332
7.4 Radar and EW Applications for High-Power GaAs FET Amplifiers	p. 334
References	p. 350
About the Authors	p. 353
Index	p. 357

Available:*

On Order

Summary

Summary

Table of Contents