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Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
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Searching... | 30000010193050 | TK7876.5 M58 2008 | Open Access Book | Book | Searching... |
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Summary
Summary
Seven years ago research in the ?eld of mm-wave silicon was virtually non-existent. Fewpeoplethoughtthatoperationat60GHzwasevenfeasibleinsilicontechnology. Inthecourseofsevenyearsthe topichastransitionedfromanobscureresearchtopic to an exciting buzzword (60GHz) that has generated much interest from industry and the venture community.To put things in historical perspective, seven years ago most commercial efforts were focused on the 1-10 GHz spectrum for voice and data applications for mobile phones and portable computers. Many people were actively seeking solutions to the "last mile" problem, or a way to deliver high speed data to users in their homes and of?ces throughcable, telephone, or wireless infrastructure. At the same time, the explosive growth of wireless data such as WiFi spurred s- ni?cant research into and development of new architectures for radio transceivers that could deliver very high data rates over short ranges, particularly for video and personal area networks. Thisproblem can be viewed as the "last meter" or even the "last inch" connection that delivers high bandwidth multimedia content to devices. The growth of MP3 media devices, and now handheld video devices, and the rapid adoptionofHDTV and ?at screentelevisions hascreateda healthydemandforte- nology that enables high speed wireless video transmission. For this reason, today we witness a very active interest in mm-wave silicon technology. Other important commercial applications include automotive radar for safety and improved driving experience. But these applications are only the tip of the iceberg.
Table of Contents
1 Introduction to mm-Wave Silicon Devices, Circuits, and Systems | p. 1 |
1.1 Introduction | p. 1 |
1.2 Why mm-Waves? | p. 3 |
1.3 The Birth of Silicon mm-Wave | p. 5 |
1.3.1 Why CMOS? | p. 8 |
1.3.2 True Cost of Silicon mm-Wave | p. 10 |
1.4 Communication in the 60 GHz Band | p. 12 |
1.4.1 Beam Forming | p. 13 |
1.5 Unique mm-Wave Applications | p. 17 |
1.5.1 mm-Wave Spectrum | p. 17 |
1.5.2 Automotive Radar | p. 18 |
1.5.3 mm-Wave Imaging for Medical Applications | p. 22 |
1.5.4 Collaborative Distributed MIMO | p. 23 |
1.6 Overview of Book | p. 24 |
References | p. 24 |
2 Silicon Technologies to Address mm-Wave Solutions | p. 25 |
2.1 Why Silicon? | p. 25 |
2.1.1 Performance | p. 26 |
2.1.2 Cost, Integration [3] | p. 27 |
2.1.3 Manufacturing Capacity | p. 27 |
2.2 Modern SiGe and CMOS Technology | p. 28 |
2.2.1 Lithography | p. 28 |
2.2.2 Low-K Dielectrics and Copper Wiring | p. 30 |
2.2.3 Mobility and Strain Engineering | p. 30 |
2.2.4 Metal Gates & High-K Dielectrics | p. 32 |
2.3 Active Devices on Recent Bulk and SOI Technologies | p. 32 |
2.3.1 Bipolar Devices | p. 33 |
2.3.2 CMOS devices | p. 34 |
2.3.3 SOI CMOS devices | p. 41 |
2.3.4 Current Density Scaling for CMOS and Bipolar Devices | p. 46 |
2.3.5 Comparison Between State-of-the-Art HBT and CMOS Devices | p. 46 |
2.4 Impact of the Back-End of Line on mm-Wave Design | p. 49 |
2.5 Conclusion | p. 55 |
2.6 Acknowledgements | p. 55 |
References | p. 56 |
3 Design and Modeling of Active and Passive Devices | p. 59 |
3.1 Passive Devices | p. 59 |
3.1.1 Transmission Lines | p. 59 |
3.1.2 Inductors | p. 70 |
3.1.3 Capacitors | p. 72 |
3.1.4 Transformers | p. 75 |
3.1.5 Resonators | p. 77 |
3.2 Active Devices | p. 79 |
3.2.1 Modeling | p. 79 |
3.2.2 Active Device Design | p. 80 |
3.2.3 Small-Signal Model | p. 89 |
3.2.4 Large-Signal Model | p. 90 |
3.2.5 FET Noise Model | p. 97 |
3.3 Conclusion | p. 105 |
References | p. 107 |
4 Amplifiers and Mixers | p. 109 |
4.1 60 GHz Low-Noise Amplifiers: What's Different? | p. 109 |
4.1.1 Transistors Closer to Cutoff | p. 109 |
4.1.2 Small Wavelengths | p. 110 |
4.1.3 Parasitics at 60 GHz | p. 111 |
4.2 Low-Noise Amplifier Design Methodology | p. 111 |
4.2.1 Input Match Optimization for Noise and Power | p. 112 |
4.2.2 Transistor Noise Parameters | p. 113 |
4.2.3 Common-Base vs. Common-Emitter | p. 115 |
4.3 Low-Noise Amplifier Examples | p. 117 |
4.3.1 Bipolar LNA (v1), Common-Base Input | p. 117 |
4.3.2 Bipolar LNA (v2), Common-Emitter Input | p. 121 |
4.3.3 CMOS Common Source Amplifiers | p. 122 |
4.3.4 CMOS Common Gate Amplifiers | p. 126 |
4.3.5 Differential Pair Amplifiers | p. 127 |
4.3.6 Multi-Stage Amplifier Design | p. 129 |
4.3.7 A Two-Stage 30 GHz Amplifier | p. 135 |
4.4 Mixers and Frequency Translation | p. 137 |
4.4.1 Single Transistor Mixers | p. 137 |
4.4.2 Dual Gate Mixers | p. 141 |
4.4.3 Gilbert Cell Mixers | p. 144 |
4.5 Examples of Integrated Front-Ends | p. 147 |
4.5.1 CMOS 130nm 60 GHz Front-End | p. 147 |
4.5.2 SiGe Transceiver Chipset | p. 150 |
4.6 Conclusion | p. 155 |
References | p. 156 |
5 Voltage-Controlled Oscillators and Frequency Dividers | p. 159 |
5.1 Considerations of VCOs | p. 159 |
5.2 Cross-Coupled Oscillators | p. 162 |
5.3 Colpitts Oscillator | p. 169 |
5.4 Other Topologies | p. 173 |
5.4.1 mm-Wave Oscillators | p. 174 |
5.4.2 Push-Push Oscillators | p. 176 |
5.4.3 Distributed Oscillators | p. 177 |
5.5 Considerations of Dividers | p. 178 |
5.6 Static Dividers | p. 180 |
5.7 Regenerative (Miller) Dividers | p. 183 |
5.8 Injection-Locked Dividers | p. 187 |
5.9 Case Study | p. 190 |
5.9.1 52-GHz LO Signal Generator | p. 191 |
5.9.2 60-GHz PLL in 0.15-[mu]m GaAs | p. 192 |
5.9.3 A 75-GHz PLL in 90-nm CMOS | p. 195 |
References | p. 199 |
6 Power Amplifiers at 60GHz and Beyond | p. 201 |
6.1 Motivation and Challenges | p. 201 |
6.2 Passive Components | p. 202 |
6.2.1 Substrate-Shielded Coplanar Waveguide Structure | p. 202 |
6.2.2 Characterization of the Substrate-Shielded CPW Structure | p. 204 |
6.2.3 Conductor-Backed Coplanar Waveguide as the Transmission Line Structure | p. 207 |
6.2.4 Wirebond and Pad Parasitic Effects | p. 209 |
6.3 Power Transistors | p. 209 |
6.3.1 Single-Transistor Power Gain and Stability | p. 210 |
6.3.2 Stability of the Cascode Pair | p. 212 |
6.3.3 Relationship of Breakdown Voltage and Cut-off Frequency | p. 214 |
6.4 Power Combining Techniques | p. 215 |
6.4.1 Basic Principle | p. 215 |
6.4.2 Distributed Active Transformer | p. 216 |
6.4.3 Electrical Funnel | p. 220 |
6.4.4 Circuit Implementation | p. 228 |
6.5 Case Studies | p. 229 |
6.5.1 A 77GHz Amplifier for Automotive RADAR Application | p. 230 |
6.5.2 A Broadband Amplifier at 85GHz | p. 233 |
6.6 Summary | p. 238 |
References | p. 240 |
7 Integrated Beamforming Arrays | p. 243 |
7.1 Introduction | p. 243 |
7.2 What is a Phased Array? | p. 245 |
7.2.1 Case Study: A 60GHz WPAN Link Budget | p. 248 |
7.3 Phased Arrays versus Timed Arrays | p. 249 |
7.4 Conventional Phased Array Architectures | p. 253 |
7.4.1 RF Phase-shifting | p. 254 |
7.4.2 LO Phase-shifting | p. 263 |
7.4.3 Digital Arrays | p. 269 |
7.4.4 Comparative View of the Conventional Architectures | p. 269 |
7.5 The VPRO-PLL Phased Array Architecture | p. 271 |
7.5.1 VPRO Concept | p. 271 |
7.5.2 Transmit Mode | p. 272 |
7.5.3 Receive Mode | p. 273 |
7.6 The Effect of Mismatch in Phased Arrays | p. 277 |
7.6.1 Beam-pointing Error | p. 278 |
7.6.2 Sidelobe Rejection Ratio | p. 280 |
7.6.3 Implications on Array Packaging | p. 281 |
7.6.4 Array Calibration | p. 282 |
7.7 Quantization Error in Phased Arrays | p. 283 |
7.8 Multi-Beam Antenna Arrays | p. 285 |
7.9 Antenna Arrays and Multiple Input Multiple Output (MIMO) Transceivers | p. 290 |
7.10 Concluding Remarks | p. 291 |
References | p. 293 |
Index | p. 297 |