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Cover image for Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment
Title:
Science and technology of semiconductor-on-insulator structures and devices operating in a harsh environment
Series:
NATO science series.

NATO science series.
Publication Information:
Dordrecht, The Netherlands : Kluwer Academic in cooperation with NATO Scientific Affairs Division, 2005
ISBN:
9781402030116
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Item Category 1
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30000010101090 TK7871.85 S34 2004 Open Access Book Proceedings, Conference, Workshop etc.
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Summary

Summary

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on "Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment" held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.


Table of Contents

C. Johnston and A. CrossleyJ.P. ColingeM.Yu. Barabanenkov and V.V. Aristov and V.N. MordkovichH. Moriceau and C. Lagahe-Blanchard and F. Fournel and S. Pocas and E. Jalaguier and P. Perreau and C. Deguet and T. Ernst and A. Beaumont and N. Kernevez and J.M. Hartman and B. Ghyselen and C. Aulnette and F. Letertre and O. Rayssac and B. Faure and C. Richtarch and I. CayrefourqV. Bondarenko and G. Troyanova and M. Balucani and A. FerrariY. Ishikawa and N. Shibata and S. FukatsuV. Ralchenko and T. Galkina and A. Klokov and A. Sharkov and S. Chernook and V. MartovitskyG. Natsvlishvili and T. Butkhuzi and M. Sharvashidze and L. Trapaidze and D. PeikrishviliA. Misiuk and J. Ratajczak and J. Katcki and I.V. AntonovaO. Martinyuk and D. Mazunov and V. Melnik and Ya. Olikh and V. Popov and B. Romanyuk and I. LisovskiiM.F. Bain and P. Baine and D.W. McNeill and G. Srinivasan and N. Jankovic and J. McCartney and R.A. Moore and B.M. Armstrong and H.S. GambleJ. Jomaah and F. BalestraA.N. NazarovD. Levacq and V. Dessard and D. FlandreV. Nakov and D. Nuernbergk and S.G.M. Richter and S. Bormann and V. Schulze and S.B. RichterJ. OlssonJ. Roig and D. Flores and J. Urresti and S. Hidalgo and J. RebolloV.Ya. UritskyV. Kilchytska and L. Vancaillie and K. de Meyer and D. FlandreD. Lederer and J.-P. RaskinS. CristoloveanuI.V. Antonova and J. Stano and O.V. Naumova and V.A. Skuratov and V.P. PopovA. Evtukh and A. Kizjak and V. Litovchenko and C. Claeys and E. SimoenO.V. Naumova and A.A. Frantzusov and I.V. Antonova and V.P. PopovY. Houk and A.N. Nazarov and V.I. Turchanikov and V.S. Lysenko and S. Adriaensen and D. FlandreG. Russell and Y. Li and H. BahrT.E. Rudenko and V.I. Kilchytska and D. FlandreN. Lukyanchikova and N. Garbar and A. Smolanka and E. Simoen and C. ClaeysS. Hall and O. Buiu and I.Z. Mitrovic and H.A.W. El Mubarek and P. Ashburn and M. Bain and H.S. Gamble and Y. Wang and P.L.F. Hemment and J. ZhangM. Bain and S. Stefanos and P. Baine and S.H. Loh and M. Jin and J.H. Montgomery and B.M. Armstrong and H.S. Gamble and J. Hamel and D.W. McNeill and M. Kraft and H.A. KemhadjianP. Godignon and M. Vellvehi and D. Flores and J. Millan and L. Moreno Hagelsieb and D. FlandreS. G. M. Richter and D. Kirsten and D.M. Nuernbergk and S.B.RichterD. Tomaszewski and K. Domanski and P. Grabiec and M. Grodner and B. Jaroszewicz and T. Klatka and A. Kociubinski and M. Koziel and W. Kucewicz and K. Kucharski and S. Kuta and J. Marczewski and H. Niemiec and M. Sapor and M. SzelezniakA. Druzhinin and I. Maryamova and I. Kogut and Y. Pankov and Y. Khoverko and T. PalewskiV.N. Dobrovolsky and V.K. RossokhatyB. Majkusiak and J. WalczakD. Jimenez and B. Iniguez and J. J. Saenz and J. Sune and L. F. Marsal and J. PallaresT. Kamins and S. Sharma and M. Saif IslamX. Tang and N. Reckinger and V. Bayot
Prefacep. ix
Technology and Economics
High temperature electronics - cluster effectsp. 1
On the evolution of SOI materials and devicesp. 11
SOI Technology as a basis for microphotonic-microelectronic integrated devicesp. 27
SOI Material Technologies
Smart Cut Technology: the path for advanced SOI substratesp. 39
Porous silicon based SOI: history and prospectsp. 53
Achievement of SiGe-on-insulator technologyp. 65
CVD diamond films for SOI technologiesp. 77
Radical beam quasiepitaxy technology for fabrication of wide-gap semiconductors on insulatorp. 85
Impact of hydrostatic pressure during annealing of Si:O on creation of SIMOX-like structuresp. 91
SiO[subscript 2] and Si[subscript 3]N[subscript 4] phase formation by ion implantation with in-situ ultrasound treatmentp. 97
Fabrication and characterisation of Silicon On Insulator substrates incorporating thermal viasp. 103
Reliability and Operation of SOI Devices in Harsh Environment
Reliability and electrical fluctuations in advanced SOI CMOS devicesp. 109
Hydrogen and high-temperature charge instability of SOI structures and MOSFETsp. 121
Recent advances in SOI MOSFET devices and circuits for ultra-low power/high temperature applicationsp. 133
Silicon-on-insulator circuits for application at high temperaturesp. 145
High-voltage SOI devices for automotive applicationsp. 155
Heat generation analysis in SOI LDMOS power transistorsp. 167
Novel SOI MOSFET structure for operation over a wide range of temperaturesp. 179
MOSFETs scaling down: advantages and disadvantages for high temperature applicationsp. 185
Temperature dependence of RF losses in high-resistivity SOI substratesp. 191
Radiation Effects
Review of radiation effects in single- and multiple-gate SOI MOSFETsp. 197
Radiation effects in SOI: Irradiation by high energy ions and electronsp. 215
Radiation characteristics of short p-channel MOSFETs on SOI substratesp. 221
Total dose behavior of partially depleted DeleCut SOI MOSFETsp. 227
Radiation effect on electrical properties of fully-depleted UNIBOND SOI MOSFETsp. 233
Characterization and Simulation of SOI Devices Operating Under Harsh Environment
Low cost high temperature test system for SOI devicesp. 241
Characterization of carrier generation in thin-film SOI devices by reverse gated-diode technique and its application at high temperaturesp. 247
Back-gate induced noise overshoot in partially-depleted SOI MOSFETsp. 255
Novel SOI Devices and Sensors Operating at Harsh Conditions
SiGe heterojunction bipolar transistors on insulating substratesp. 261
Silicon-on-Insulator substrates with buried ground planes (GPSOI)p. 273
High-voltage high-current DMOS transistor compatible with high-temperature thin-film SOI CMOS applicationsp. 279
A novel low leakage EEPROM cell for application in an extended temperature range (-40 [degree]C up to 225 [degree]C)p. 285
Design, fabrication and characterization of SOI pixel detectors of ionizing radiationp. 291
Polysilicon-on-insulator layers at cryogenic temperatures and high magnetic fieldsp. 297
Planar photomagnetic effect SOI sensors for various applications with low detection limitp. 303
Theoretical limit for the SiO[subscript 2] thickness in silicon MOS devicesp. 309
Compact model of the nanscale gate-all-around MOSFETp. 321
Self-assembled semiconductor nanowires on silicon and insulating substrates: Experimental behaviorp. 327
Fabrication of SOI nano devicesp. 333
Keyword Indexp. 345
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