Rare-earth doping for advanced materials for photonic applications - 2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.

Symposium V, "Rare-Earth Doping of Advanced Materials for Photonic Applications," took place during the 2011 Spring Meeting of the Materials Research Society in San Francisco, California, April 25−29, 2011. It brought together researchers from a number of fields that traditionally do not interact closely with each other and provided the semiconductor, phosphors and device communities with a unique opportunity to discuss fundamental topics of common interest that underlie the emission in rare-earth-doped materials. Such a mix of different research topics, silicon photonics, phosphors, oxides, and wide band gap materials including III-nitride semiconductors, to name a few, greatly promotes a healthy and vigorous exchange of ideas. The goal of this symposium was to highlight the status of light emission at infrared and visible wavelengths from rare-earth-doped phosphors as well as semiconductors. Issues of rare-earth-materials applications for green technologies, sustainability and opportunities for development of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.velopment of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.velopment of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.velopment of multifunctional devices utilizing magnetic, electric and pressure stimuli were also addressed.

Part I ZnO, GaN, Phosphors

1 Rare earth materials challenge to national defense: material scientist's perspectiveShiva Hullavarad

2 Electroluminescence properties of Eu-doped GaN-based light-emitting diodes grown by organometallic vapor phase epitaxyAtsushi Nishikawa

3 Photoluminescence X-ray excitation spectra in Eu-doped GaN grown by organometallic vapor phase epitaxyShuichi Emura

4 Nature and excitation mechanism of the emission-dominating minority Eu-center in GaN grown by organometallic vapor-phase epitaxyJonathan Poplawsky

5 Damage formation in GaN under medium energy range implantation of rare earth ions: a combined TEM, XRD and RBS/C investigationBertrand Lacroix

Part II Insulating Materials: Lasers and Phosphors

6 Upconversion in rare-earth ion-doped NaYF4 crystals and nanocolloidsDarayas Patel

7 Preparation of luminescent inorganic core/shell-structured nanoparticlesMoritz Milde

8 Vacuum deposited erbium-doped NIR luminescent organic thin films for 1.5 ïü¡m optical amplication applicationsChristophe Galindo

9 Multicolor luminescence from Ca3Y2(SiO4)3:Eu2+, Eu3+ materialAnna Dobrowolska

10 Efficient near-infrared luminescence and energy transfer in Nd-Bi co-doped zeolitesZhenhua Bai

11 Red-emitting Ca(1-x)SrxS:Eu2+ phosphors as light converters for plant-growth applicationsMiroslaw Batentschuk

12 Photostimulable fluorescent nanoparticles for biological imagingAndres Osvet

13 Imaging upconversion from NaYF4:Er:Yb nanoparticles on Au and Ag nanostructured substratesSteve Smith

Part III Rare Earth Ions in Group III - Nitrides

14 Ultraviolet light emitting devices using AlGdNTakashi Kita

15 Theoretical investigation of Er-O co-doping in hexagonal GaNSimone Sanna

16 Photoluminescence of Eu-doped GaNKevin O'Donnell

17 Site selective magneto-optical studies of Eu ions in gallium nitrideNathaniel Woodward

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