Title:
A study of s new power semiconductor insulated gate bipolar transistor (IGBT) characteristics and its application to automative ignition
Personal Author:
Publication Information:
Miramare-Trieste: IAEA, 1995
Added Corporate Author:
Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
---|---|---|---|---|---|
Searching... | 30000003973595 | TK7871.96.B55 R32 1995 | Open Access Book | Book | Searching... |