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Summary
Summary
Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information.
Author Notes
Inder J. Bahl is an IEEE Fellow and a member of the Electromagnetic Academy. He is the editor of the International Journal of RF and Microwave Computer-Aided Engineering. He earned his Ph.D. in electrical, engineering and has over 40 years of experience working in the microwave field.
Table of Contents
Preface | p. xi |
Chapter 1 Introduction | p. 1 |
1.1 History of Control Components | p. 1 |
1.2 Types of Control Components | p. 2 |
1.3 Solid-State Switching Devices | p. 3 |
1.4 Design of Control Components | p. 5 |
1.5 Fabrication of Control Components | p. 9 |
1.6 Applications | p. 12 |
1.7 Book Organization | p. 14 |
References | p. 15 |
Chapter 2 Control Devices | p. 19 |
2.1 PIN Diodes | p. 19 |
2.1.1 Operation of PIN Diodes | p. 19 |
2.1.2 PIN Diode Models | p. 21 |
2.2 GaAs MESFETs | p. 24 |
2.2.1 Operation of MESFETs | p. 24 |
2.2.2 Linear Switch FET Models | p. 26 |
2.2.3 Nonlinear Switch FET Models | p. 33 |
2.3 GaAs HEMTs | p. 36 |
2.4 GaAs HBTs | p. 39 |
2.5 GaN HEMTs | p. 39 |
2.6 CMOS Transistors | p. 40 |
2.6.1 Operation of CMOS Switch | p. 40 |
2.6.2 Various Body Floating Techniques | p. 42 |
2.6.3 CMOS Transistor Models | p. 44 |
2.7 Other Devices | p. 45 |
2.7.1 Schottky Diodes | p. 46 |
2.7.2 Varactor Diodes | p. 49 |
2.8 Transistor Model Scaling | p. 49 |
2.9 Biasing of Switching Devices | p. 50 |
2.9.1 Biasing of PIN Diodes | p. 50 |
2.9.2 Biasing of Transistors | p. 58 |
2.10 Switching Speed | p. 59 |
2.10.1 Switching Speed of PIN Diodes | p. 59 |
2.10.2 Switching Speed of Transistors | p. 61 |
2.11 Comparison of Switching Devices | p. 62 |
References | p. 62 |
Chapter 3 Switches | p. 67 |
3.1 Introduction | p. 67 |
3.1.1 Switch Parameters | p. 67 |
3.1.2 Devices for Switches | p. 69 |
3.1.3 Basic Requirements of a Switch for Wireless Applications | p. 69 |
3.2 Design of Switches | p. 70 |
3.2.1 Types of Switches | p. 70 |
3.2.2 Switch. Configurations | p. 72 |
3.2.3 Basic Theory of Switches | p. 75 |
3.3 Multiport Switches | p. 78 |
3.3.1 Multithrow Switches | p. 78 |
3.3.2 Matrix Switches | p. 79 |
3.3.3 Diversity Switch | p. 79 |
3.4 High Isolation Switches | p. 81 |
3.5 Broadband Switches | p. 84 |
3.6 High-Power Switches | p. 86 |
3.6.1 Impedance Transformation Technique | p. 88 |
3.6.2 Stacked FETs Method | p. 90 |
3.6.3 Resonant Circuit Technique | p. 91 |
3.6.4 GaN HEMT Switches | p. 92 |
3.6.5 Power Handling of PIN Diode Switches | p. 93 |
3.7 Low Distortion Switches | p. 94 |
3.8 Performance of Switch Circuits | p. 96 |
3.8.1 PIN Diode Switch Circuits | p. 96 |
3.8.2 MESFET Switch Circuits | p. 99 |
3.8.3 HEMT Switch Circuits | p. 101 |
3.8.4 CMOS Switch Circuits | p. 107 |
3.8.5 Comparison of Switch Technologies | p. 109 |
3.9 Novel Switch Configurations | p. 110 |
3.9.1 Filter-Integrated Switch | p. 110 |
3.9.2 Redundant Switch | p. 111 |
3.9.3 Switched Variable Power Amplifier | p. 111 |
3.9.4 Switches with Integrated Control | p. 113 |
3.10 Intermodulation Analysis of Switches | p. 113 |
3.10.1 PIN Diode Switches | p. 114 |
3.10.2 MESFET Switches | p. 114 |
References | p. 115 |
Chapter 4 Phase Shifters | p. 123 |
4.1 Types of Phase Shifters | p. 123 |
4.1.1 Digital Phase Shifters | p. 123 |
4.1.2 Analog Phase Shifters | p. 126 |
4.1.3 Active Phase Shifters | p. 127 |
4.2 Theory of Phase Shifters | p. 127 |
4.2.1 Reflection-Type Phase Shifter | p. 127 |
4.2.2 Switched-Line Phase Shifter | p. 133 |
4.2.3 Loaded-Line Phase Shifters | p. 136 |
4.2.4 Switched-Network Phase Shifters | p. 142 |
4.2.5 Embedded-Device Phase Shifters | p. 152 |
4.3 Multibit Phase Shifter Circuits | p. 155 |
4.3.1 RMS Errors | p. 155 |
4.3.2 PIN Diode Phase Shifters | p. 156 |
4.3.3 MESFET/HEMT Phase Shifters | p. 157 |
4.3.4 CMOS Phase. Shifters | p. 163 |
4.4 Analog Phase Shifters | p. 165 |
4.4.1 Voltage-Controlled Reflection-Type Phase Shifters | p. 165 |
4.4.2 Voltage-Controlled Transmission-Type Phase Shifters | p. 166 |
4.4.3 Analog Varactor Diode Phase Shifters | p. 169 |
4.4.4 Analog CMOS Phase Shifters | p. 170 |
4.5 Broadband Phase Shifters | p. 171 |
4.5.1 GaAs MESFET/HEMT Broadband Phase Shifters | p. 173 |
4.5.2 Broadband CMOS Phase Shifters | p. 179 |
4.6 Ultrawideband Phase Shifters | p. 180 |
4.7 Millimeter-Wave Phase Shifters | p. 185 |
4.7.1 PIN/Schottky Diode Millimeter-Wave Phase Shifters | p. 185 |
4.7.2 MESFET/HEMT Millimeter-Wave Phase Shifters | p. 185 |
4.7.3 CMOS Millimeter-Wave Phase Shifters | p. 189 |
4.8 Active Phase Shifters | p. 190 |
4.8.1 Dual-Gate FET Phase Shifters | p. 191 |
4.8.2 Switchable-Amplifier Phase Shifters | p. 192 |
4.8.3 Vector Modulator Phase Shifters | p. 192 |
References | p. 197 |
Chapter 5 Attenuators | p. 207 |
5.1 Introduction | p. 207 |
5.1.1 Types of Attenuators | p. 207 |
5.1.2 Theory of Attenuators | p. 210 |
5.1.3 Fabrication of Attenuators | p. 214 |
5.2 Fixed Value Attenuators | p. 214 |
5.2.1 Attenuator Pad | p. 214 |
5.2.2 Temperature Variable Attenuator | p. 215 |
5.3 Multibit Attenuators | p. 216 |
5.3.1 PIN Diode Step Attenuators | p. 217 |
5.3.2 GaAs MMIC Step Attenuators | p. 218 |
5.3.3 Si CMOS Step Attenuators | p. 220 |
5.4 Variable Voltage Attenuators | p. 222 |
5.4.1 PIN Diode Variable Attenuators | p. 223 |
5.4.2 MESFET Variable Attenuators | p. 224 |
5.4.3 CMOS Variable Attenuator | p. 227 |
5.4.4 GaN HEMT Attenuator | p. 228 |
5.4.5 Linear Voltage Variable Attenuators | p. 229 |
5.6 Other Attenuator Circuits | p. 236 |
5.6.1 Reflection-Type Attenuators | p. 236 |
5.6.2 Balanced Attenuators | p. 240 |
5.6.3 Frequency Dependent Attenuators | p. 242 |
5.6.4 Phase Compensated Attenuators | p. 244 |
5.6.5 CMOS Attenuator with Integrated Switch | p. 245 |
5.7 Distortion in Attenuators | p. 245 |
5.7.1 PIN Diode Attenuators | p. 246 |
5.7.2 FET Attenuators | p. 247 |
References | p. 248 |
Chapter 6 Limiters | p. 253 |
6.1 Introduction | p. 253 |
6.1.1 Limiter Characterization | p. 254 |
6.1.2 Limiter Types | p. 255 |
6.2 PIN Diode Limiters | p. 259 |
6.2.1 Analysis of PIN Diode Limiter | p. 259 |
6.2.2 Si PIN Diode Limiters in Microstrip Configuration | p. 263 |
6.2.3 GaAs PIN Diode Limiters | p. 265 |
6.2.4 Matched Limiters | p. 267 |
6.3 Schottky Diode Limiters | p. 269 |
6.3.1 Analysis of Schottky Diode Limiter | p. 271 |
6.3.2 Schottky Diode Design and Limiter Configuration | p. 273 |
6.3.3 Broadband High Power Limiters | p. 274 |
6.4 Monolithic GaAs Schottky Diode Limiter Circuits | p. 275 |
6.4.1 Limiting Amplifiers | p. 276 |
6.4.2 10-W Limiter with Embedded LNA | p. 278 |
6.5 Other Diode Limiters | p. 282 |
6.5.1 BiCMOS Diode Limiter | p. 282 |
6.5.2 GaN Schottky Diode Limiters | p. 283 |
References | p. 283 |
Appendix A Physical Constants and Frequency Band Designations | p. 287 |
Appendix B Thermal Design of Devices | p. 289 |
B.1 Thermal Basics | p. 289 |
B.2 Transistor Thermal Design | p. 291 |
B.2.1 Cooke Model for Single-Gate Devices | p. 291 |
B.2.2 Cook Model for Multiple-Gate Devices | p. 292 |
B.2.3 Pulsed Operation | p. 294 |
B.2.4 Component Assembly Thermal Design Considerations | p. 295 |
References | p. 296 |
Index | p. 297 |
About the Author | p. 299 |