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Cover image for Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate
Title:
Two-dimensional analytical threshold voltage model of nanoscale strained silicon MOSFET with tri-material gate
Publication Information:
2010
Physical Description:
xvii, 61 p. : ill. ; 30 cm.
General Note:
Supervisor : Prof. Dr Razali Ismail
Added Author:
Added Corporate Author:
DSP_DISSERTATION:
Project Paper (Sarjana Muda Kejuruteraan (Elektrik - Mikroelektronik)) - Universiti Teknologi Malaysia, 2010

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FKE30000004008 XX(766054.1) Closed Access Thesis UTM Project Paper (Closed Access)
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30000010259734 TK7871.95 M84 2010 raf Closed Access Thesis UTM Project Paper (Closed Access)
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