Available:*
Library | Item Barcode | Call Number | Material Type | Item Category 1 | Status |
|---|---|---|---|---|---|
Searching... | 30000010019234 | TP261.C3 P76 2002 | Open Access Book | Book | Searching... |
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Summary
Summary
Silicon carbide (SiC) is a wide bandgap semiconductor whose properties make it suitable for devices and integrated circuits operating at high voltage, high frequency and high temperature. This second book in the Processing series explains why SiC is so useful in electronics and gives clear guidance on the various processing steps. Growth, doping, etching, contact formation and dielectrics are all described in detail. The final chapter explains how to integrate the processing steps, and shows typical device cross-sections for over 20 different devices. Engineers who are developing systems for the fabrication of SiC devices are in need of guidance from experts in academia and the industry who have been pioneering the field: the book is designed as an advanced tutorial and reference for this purpose. A glossary of terms used in SiC technology is included.
Table of Contents
| Introduction |
| 1 vantages of SiC-M.Zetterling and M.Östling |
| 2 Bulk and epitaxial growth of SiCN.Nordell |
| 3 Ion implantation and diffusion in SiCA.Schöner |
| 4 Wet and dry etching of SiCS.J.Pearton |
| 5 Thermally grown and deposited thermoelectricsE.Ö.Sveinbjörnsson and C.-M.Zetterling |
| 6 Schottky and ohmic contacts to SiCC.-M. Zetterling and S.-K.Lee and M.Östling |
| 7 Devices in SiC C.-M.ZetterlingS.M.Koo and M.Östling |
| Appendix 1 Other resources |
| Appendix 2 Glossary |
| Index |
