Nanoscale semiconductor memories : technology and applications

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Title:

Series:

Devices, circuits, and systems

Publication Information:

Boca Raton, FL. : CRC Press, 2014

Physical Description:

xxx, 428 pages : illustrations ; 24 cm

ISBN:

9781466560604

Abstract:

"Preface At no time in the history of the semiconductor industry has memory technology assumed such a pivotal position. The last decade has seen a remarkable shift in usage and value of semiconductor memory technologies. These changes have been driven by the elevation of three particular target applications for the development of memory technology performance attributes. The first and most obvious shift is that mobile multimedia applications such as tablets and advanced cell phones have now replaced desktop data processing as the primary target for many new semiconductor technologies. The significance of this shift is that the smaller form factor and smaller semiconductor content automatically increases the percentage of value contributed by the analog wireless and the memory components. The second trend is driven by the explosive growth in the sheer volume of data that is being created and stored. The continuing growth in digital information is heavily driven by mobile multimedia access to cloud storage on the Internet as well as the astounding increase in image data storage and manipulation. The third trend is the shift of emphasis from the individual components to the ability to configure some high-volume elements in subsystems and multidie packages rather than as discrete components on a motherboard. Over the past three decades, numerous memory technologies have been brought to market with varying degrees of commercial success, such as static random-access memory (SRAM), pseudostatic RAM, NOR flash, erasable programmable readonly memory (EPROM), electrically erasable programmable read-only memory (EEPROM), dynamic RAM (DRAM), and NAND flash. Generally speaking, these "memory" technologies can be split into two categories: volatile and nonvolatile"-- Provided by publisher

Subject Term:

Semiconductor storage devices

Nanoelectronics

Added Author:

Kurinec, Santosh K.,

Iniewski, Krzysztof, 1960-

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Library	Item Barcode	Call Number	Material Type	Item Category 1	Status
Searching... PSZ JB	30000010338248	TK7895.M4 N36 2014	Open Access Book	Book	Searching... Unknown

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Summary

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance , and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.

Qingqing LiangGilles Gasiot and Philippe RocheLawrence T. ClarkMyoung Jin LeeSorin Cristoloveanu and Maryline BawedinFrancisco Gamiz and Noel Rodriguez and Sorin CristoloveanuTobias Nowozin and Andreas Marent and Martin Geller and Dieter BimbergKangho LeeMichael C. Gaidis and Luc ThomasJin He and Yujun Wei and Mansun ChanHelena Silva and Azer Faraclas and Ali GokirmakPeng Zhou and Lin Chen and Hangbing Lv and Haijun Wan and Qingqing SunHong Yu Yu

Preface	p. xi
Editors	p. xvii
Contributors	p. xix
Part I Static Random Access Memory
Chapter 1 SRAM: The Benchmark of VLSI Technology	p. 3
Chapter 2 Complete Guide to Multiple Upsets in SRAMs Processed in Decananometric CMOS Technologies	p. 25
Chapter 3 Radiation Hardened by Design SRAM Strategies for TID and SEE Mitigation	p. 57
Part II Dynamic Random Access Memory
Chapter 4 DRAM Technology	p. 101
Chapter 5 Concepts of Capacitorless IT-DRAM and Unified Memory on SOI	p. 137
Chapter 6 A-RAM Family: Novel Capacitorless IT-DRAM Cells for 22 nm Nodes and Beyond	p. 157
Part III Novel Flash Memory
Chapter 7 Quantum Dot-Based Flash Memories	p. 183
Part IV Magnetic Memory
Chapter 8 Spin-Transfer-Torque MRAM	p. 203
Chapter 9 Magnetic Domain Wall "Racetrack" Memory	p. 229
Part V Phase-Change Memory
Chapter 10 Phase-Change Memory Cell Model and Simulation	p. 259
Chapter 11 Phase-Change Memory Devices and Electrothermal Modeling	p. 307
Part VI Resistive Random Access Memory
Chapter 12 Nonvolatile Memory Device: Resistive Random Access Memory	p. 333
Chapter 13 Nanoscale Resistive Random Access Memory: Materials, Devices, and Circuits	p. 361
Index	p. 419

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